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SBCP53-10T1G

Onsemi

SBCP53-10T1G by Onsemi

SBCP53-10T1G by Onsemi is a PNP BJT transistor with 80V VCEO, 1.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers reliable performance in various electronic designs.

Median Price

$0.168

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$1.159

100+ parts

$1.101

1k+ parts

$1.101

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-

2,000

$1.159

$1.101

$1.101

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Future Electronics

Canada . 55,000 parts In-Stock

1+ parts

-

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$0.134

10k+ parts

$0.130

55,000

-

-

$0.134

$0.130

Rochester

USA . 3,406 parts In-Stock

1+ parts

-

100+ parts

$0.168

1k+ parts

$0.140

10k+ parts

$0.124

3,406

-

$0.168

$0.140

$0.124

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.130

100+ parts

-

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50

$0.130

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Digiode

USA . 605 parts In-Stock

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$0.131

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605

$0.131

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Flip Electronics

USA . 95,000 parts In-Stock

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NAC Semi

USA . 44,000 parts In-Stock

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$0.298

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44,000

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$0.298

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Vyrian

USA . 10,329 parts In-Stock

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Chip Stock

USA . 3,500 parts In-Stock

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3,500

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,337 parts In-Stock

1+ parts

$0.117

100+ parts

-

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1,337

$0.117

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Semicontronic

India . 1,333 parts In-Stock

1+ parts

$0.117

100+ parts

$0.114

1k+ parts

$0.113

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1,333

$0.117

$0.114

$0.113

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Corphita

USA . 1,087 parts In-Stock

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$0.124

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1,087

$0.124

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Corohmni

South Africa . 157 parts In-Stock

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$0.127

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157

$0.127

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Argo Parts USA

USA . 1,781 parts In-Stock

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$0.130

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$0.126

1,781

$0.130

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$0.126

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.130

100+ parts

-

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$0.123

10k+ parts

$0.121

1,000

$0.130

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$0.123

$0.121

Component Stockers USA

USA . 6,762 parts In-Stock

1+ parts

$0.140

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$0.130

1k+ parts

$0.120

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6,762

$0.140

$0.130

$0.120

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.159

100+ parts

$1.101

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$1.101

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2,000

$1.159

$1.101

$1.101

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Aztec Data Supply Inc.

USA . 222 parts In-Stock

1+ parts

$1.852

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222

$1.852

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Kepictronics

USA . 306,000 parts In-Stock

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Perfect Parts

USA . 35,840 parts In-Stock

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Lixinc

USA . 17,257 parts In-Stock

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SupplyDigital Components

Austria . 7,647 parts In-Stock

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Problanco Electronics

Mexico . 6,410 parts In-Stock

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ChipstoGo Electronic ltd

UK . 4,000 parts In-Stock

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TANS Electronics

Latvia . 3,858 parts In-Stock

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Kulean Microsystems

USA . 3,607 parts In-Stock

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3,607

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Continental Prestige Electronics

USA . 1,210 parts In-Stock

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$0.167

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$0.082

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$0.071

1,210

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$0.167

$0.082

$0.071

UHIMA Technologies

Türkiye . 522 parts In-Stock

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522

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Overview

Unlock the power of high-quality amplification with Onsemi's SBCP53-10T1G Power Bipolar Junction Transistor. Designed with precision and expertise, this PNP transistor offers unparalleled performance in a compact package. Ideal for amplifier applications, this transistor boasts a maximum collector-emitter voltage of 80V and a maximum collector current of 1.5A, ensuring reliable and efficient operation. With a minimum DC current gain of 63 and a nominal transition frequency of 50MHz, this transistor delivers exceptional results every time. Trust Onsemi to provide you with top-notch components that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to external elements, making the transistor suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and are well-suited for a range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and provides ease of use in various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier circuits, ensuring optimal performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, ideal for space-constrained applications.

No. of Terminals: 4

Four terminals offer flexibility in circuit connections and allow for versatile usage in different electronic designs.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capacity ensures the transistor can handle demanding applications without overheating or failing.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating enables the transistor to handle higher voltage levels in the circuit, enhancing reliability.

Maximum Collector Current (IC): 1.5 A

High collector current capacity allows the transistor to handle larger current flows, making it suitable for power applications.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency ensures fast signal processing and amplification, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SBCP53-10T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBCP53-10T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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