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SBCP56T3G

Onsemi

SBCP56T3G by Onsemi

SBCP56T3G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

$0.163

Lifecycle Status

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18

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1k+

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Arrow

USA . 22 parts In-Stock

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$0.145

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RS Americas

USA . 325 parts In-Stock

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$0.158

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325

$0.158

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RS (Exports)

UK . 325 parts In-Stock

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$0.158

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325

$0.158

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Mouser Electronics

USA . 69 parts In-Stock

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$0.460

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$0.225

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$0.174

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$0.139

69

$0.460

$0.225

$0.174

$0.139

DigiKey

USA . 1,636 parts In-Stock

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$0.750

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$0.299

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$0.204

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$0.185

1,636

$0.750

$0.299

$0.204

$0.185

Rochester

USA . 857 parts In-Stock

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$0.168

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$0.140

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$0.125

857

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$0.125

Chip1Stop

Japan . 22 parts In-Stock

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Nova Conductors

Japan . 41 parts In-Stock

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$0.124

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Digiode

USA . 1,874 parts In-Stock

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$0.131

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1,874

$0.131

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Bristol Electronics

USA . 2,527 parts In-Stock

1+ parts

$0.702

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$0.351

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$0.140

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2,527

$0.702

$0.351

$0.140

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NAC Semi

USA . 52,000 parts In-Stock

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$0.300

Flip Electronics

USA . 32,000 parts In-Stock

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R&J Components

USA . 4,932 parts In-Stock

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Chip Stock

USA . 4,250 parts In-Stock

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Vyrian

USA . 3,745 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,527 parts In-Stock

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Dan-Mar Components

USA . 2,527 parts In-Stock

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PC Components Company LLC

USA . 262 parts In-Stock

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Ampacity Inc.

Singapore . 3,707 parts In-Stock

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$0.117

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$0.117

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Corohmni

South Africa . 414 parts In-Stock

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$0.121

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Argo Parts USA

USA . 4,278 parts In-Stock

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$0.124

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$0.120

4,278

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Continental Prestige Electronics

USA . 465 parts In-Stock

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$0.124

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$0.121

465

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$0.121

Netroflash

USA . 100 parts In-Stock

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$0.124

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Corphita

USA . 1,292 parts In-Stock

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$0.124

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Semicontronic

India . 3,428 parts In-Stock

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$0.255

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$0.249

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$0.247

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Aztec Data Supply Inc.

USA . 3,500 parts In-Stock

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$1.270

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$1.270

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QUARKTWIN TECHNOLOGY LTD

USA . 13,038 parts In-Stock

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SupplyDigital Components

Austria . 7,085 parts In-Stock

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Problanco Electronics

Mexico . 4,841 parts In-Stock

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TANS Electronics

Latvia . 3,918 parts In-Stock

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Kulean Microsystems

USA . 712 parts In-Stock

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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Overview

Unlock the power of innovation with the SBCP56T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like no other. Perfect for amplifier applications, this NPN transistor offers unmatched performance and reliability. With a maximum collector-emitter voltage of 80V and a small outline package style, this transistor is designed to meet your needs. Experience the value and benefits of Onsemi's SBCP56T3G and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape is compact and efficient, fitting well in tight spaces within electronic devices.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and easy soldering during assembly.

No. of Terminals: 4

The 4 terminals offer flexibility in circuit connections and configurations for different electronic applications.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation capability, this transistor can handle heavy loads and high power requirements.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting of components.

Minimum DC Current Gain (hFE): 40

A high minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environments and high temperatures.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows the transistor to handle high voltage applications.

Transistor Element Material: SILICON

The silicon material provides excellent performance and reliability in various operating conditions.

Maximum Collector Current (IC): 1 A

Able to handle high collector currents, making it suitable for applications with high current requirements.

Terminal Finish: MATTE TIN

The matte tin finish provides a reliable and durable terminal connection for enhanced performance.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit configurations and connections for different electronic applications.

Case Connection: COLLECTOR

The case connection at the collector terminal simplifies circuit design and improves thermal performance.

Maximum Time At Peak Reflow Temperature (s): 30

With a short reflow time, this transistor is easy and quick to solder during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure soldering connections and reliability in harsh operating environments.

Nominal Transition Frequency (fT): 130 MHz

With a high nominal transition frequency, this transistor can achieve fast switching speeds for efficient amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SBCP56T3G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBCP56T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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