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SBCP53-16T1G

Onsemi

SBCP53-16T1G by Onsemi

SBCP53-16T1G by Onsemi is a PNP BJT transistor with 80V VCE, 1.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers high performance in compact designs.

Median Price

$0.192

Lifecycle Status

Suppliers In-Stock

19

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1k+

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Adafruit Industries

USA . 30 parts In-Stock

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$2.012

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$1.911

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$1.911

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$2.012

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$1.911

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Arrow

USA . 7,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 922 parts In-Stock

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Rochester

USA . 600 parts In-Stock

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$0.168

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$0.140

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$0.125

600

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$0.168

$0.140

$0.125

DigiKey

USA . 377 parts In-Stock

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$0.193

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$0.174

377

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RS (Exports)

UK . 175 parts In-Stock

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$0.192

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$0.145

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Chip1Stop

Japan . 4 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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$0.127

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500

$0.127

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Digiode

USA . 1,862 parts In-Stock

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$0.131

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$0.131

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Bristol Electronics

USA . 130 parts In-Stock

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$0.675

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$0.338

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130

$0.675

$0.338

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Vyrian

USA . 209,757 parts In-Stock

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NAC Semi

USA . 56,000 parts In-Stock

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$0.186

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Dan-Mar Components

USA . 56,000 parts In-Stock

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Chip Stock

USA . 24,500 parts In-Stock

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Semi Source

USA . 1,457 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,000 parts In-Stock

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Flip Electronics

USA . 922 parts In-Stock

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Sensible Micro Corp

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Contempo Components LLC

USA . 80 parts In-Stock

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80

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Distributors (Availability)

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Argo Parts USA

USA . 467 parts In-Stock

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$0.113

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$0.110

467

$0.113

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$0.110

Semicontronic

India . 423,004 parts In-Stock

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$0.117

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$0.114

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$0.113

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423,004

$0.117

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$0.113

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Ampacity Inc.

Singapore . 228,064 parts In-Stock

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$0.117

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$0.117

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Corphita

USA . 968 parts In-Stock

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$0.124

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968

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Corohmni

South Africa . 75 parts In-Stock

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$0.125

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75

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Netroflash

USA . 500 parts In-Stock

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$0.127

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$0.125

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500

$0.127

$0.125

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Continental Prestige Electronics

USA . 5,474 parts In-Stock

1+ parts

$0.391

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$0.188

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$0.091

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5,474

$0.391

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$0.091

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Aztec Data Supply Inc.

USA . 83 parts In-Stock

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$1.740

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83

$1.740

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Advanced Electronics

New Zealand . 30 parts In-Stock

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$2.012

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$1.911

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$1.911

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30

$2.012

$1.911

$1.911

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Authorized Procurement Solutions

USA . 5,271,000 parts In-Stock

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GreenTree Electronics

Israel . 4,408,000 parts In-Stock

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Perfect Parts

USA . 1,564,101 parts In-Stock

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Eastek

USA . 47,000 parts In-Stock

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$0.187

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Glotronic Ltd.

UK . 29,600 parts In-Stock

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ChipstoGo Electronic ltd

UK . 17,000 parts In-Stock

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S.R.D Solutions

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Kepictronics

USA . 9,434 parts In-Stock

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SupplyDigital Components

Austria . 7,042 parts In-Stock

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Kulean Microsystems

USA . 5,945 parts In-Stock

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iodParts Technologies Inc.

India . 5,790 parts In-Stock

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TANS Electronics

Latvia . 4,762 parts In-Stock

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Robosynatics

Brazil . 2,329 parts In-Stock

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$8.839

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$8.839

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$8.839

2,329

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$8.839

$8.839

$8.839

Lucentia Tech

USA . 2,329 parts In-Stock

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$8.839

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$8.839

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$8.839

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$8.839

UHIMA Technologies

Türkiye . 665 parts In-Stock

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Problanco Electronics

Mexico . 434 parts In-Stock

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434

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Allen Electronics Distributors

USA . 200 parts In-Stock

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$0.806

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200

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Lixinc

USA . 182 parts In-Stock

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Overview

Unlock the power of high-quality performance with the SBCP53-16T1G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch reliability and durability in all their products. The SBCP53-16T1G falls under the category of Power Bipolar Junction Transistors (BJT) and is perfect for amplifier applications. With its PNP configuration and maximum collector-emitter voltage of 80V, this transistor offers unmatched value and benefits to customers looking for efficient and effective electronic solutions. Experience seamless integration and optimal performance with the SBCP53-16T1G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration in PNP amplifier circuits.

Configuration: SINGLE

Simplified design and operation as a single transistor.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Surface Mount: YES

Facilitates easy PCB installation and space-saving in electronic devices.

Package Shape: RECTANGULAR

Standard shape for easy handling and mounting on circuit boards.

Terminal Form: GULL WING

Enhances connectivity and soldering during PCB assembly.

No. of Terminals: 4

Provides necessary connectivity for efficient circuit operation and control.

Maximum Power Dissipation (Abs): 1.5 W

Ensures stable and safe operation under specified power parameters.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 100

Ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperatures, ensuring versatility in usage.

Maximum Collector-Emitter Voltage: 80 V

Supports high voltage applications without compromising performance.

Transistor Element Material: SILICON

Known for its efficiency and reliability in transistor applications.

Maximum Collector Current (IC): 1.5 A

Capable of handling moderate current levels for various applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable and durable finish for terminal connections.

Terminal Position: DUAL

Facilitates convenient circuit connections and layout.

Case Connection: COLLECTOR

Clear designation for easy integration into circuit designs.

Peak Reflow Temperature °C: 260

Supports high-temperature soldering processes for secure connections.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) SBCP53-16T1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBCP53-16T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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