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BCP5616H6327XTSA1

Infineon Technologies

BCP5616H6327XTSA1 by Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.

Median Price

$0.163

Lifecycle Status

EOL

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,022 parts In-Stock

1+ parts

$0.175

100+ parts

$0.086

1k+ parts

-

10k+ parts

-

2,022

$0.175

$0.086

-

-

Adafruit Industries

USA . 600 parts In-Stock

1+ parts

$0.502

100+ parts

$0.457

1k+ parts

$0.412

10k+ parts

-

600

$0.502

$0.457

$0.412

-

Mouser Electronics

USA . 2,517 parts In-Stock

1+ parts

$1.280

100+ parts

$0.562

1k+ parts

$0.256

10k+ parts

$0.172

2,517

$1.280

$0.562

$0.256

$0.172

Chip1Stop

Japan . 25,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.146

10k+ parts

$0.130

25,000

-

-

$0.146

$0.130

Rochester

USA . 21,532 parts In-Stock

1+ parts

-

100+ parts

$0.151

1k+ parts

$0.125

10k+ parts

$0.112

21,532

-

$0.151

$0.125

$0.112

Master Electronics

USA . 11,000 parts In-Stock

1+ parts

-

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11,000

-

-

-

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Verical

USA . 2,022 parts In-Stock

1+ parts

-

100+ parts

$0.086

1k+ parts

-

10k+ parts

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2,022

-

$0.086

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 642 parts In-Stock

1+ parts

$0.141

100+ parts

-

1k+ parts

-

10k+ parts

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642

$0.141

-

-

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Nova Conductors

Japan . 62 parts In-Stock

1+ parts

$0.230

100+ parts

-

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-

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62

$0.230

-

-

-

Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.713

100+ parts

$0.356

1k+ parts

$0.142

10k+ parts

$0.107

3,000

$0.713

$0.356

$0.142

$0.107

Rutronik

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.168

10k+ parts

$0.149

5,000

-

-

$0.168

$0.149

Vyrian

USA . 2,377 parts In-Stock

1+ parts

-

100+ parts

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2,377

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VNN

France . 1,403 parts In-Stock

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1,403

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-

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.457

10k+ parts

-

1,000

-

-

$0.457

-

TME

Poland . 35 parts In-Stock

1+ parts

-

100+ parts

$0.222

1k+ parts

$0.178

10k+ parts

-

35

-

$0.222

$0.178

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 21,841 parts In-Stock

1+ parts

$0.109

100+ parts

$0.106

1k+ parts

$0.106

10k+ parts

-

21,841

$0.109

$0.106

$0.106

-

Ampacity Inc.

Singapore . 15,378 parts In-Stock

1+ parts

$0.111

100+ parts

-

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-

10k+ parts

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15,378

$0.111

-

-

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Corphita

USA . 407 parts In-Stock

1+ parts

$0.133

100+ parts

-

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-

10k+ parts

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407

$0.133

-

-

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Modulus Dynamics

Lithuania . 25,443 parts In-Stock

1+ parts

$0.204

100+ parts

$0.196

1k+ parts

$0.188

10k+ parts

-

25,443

$0.204

$0.196

$0.188

-

Corohmni

South Africa . 186 parts In-Stock

1+ parts

$0.204

100+ parts

-

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-

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186

$0.204

-

-

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Continental Prestige Electronics

USA . 3,351 parts In-Stock

1+ parts

$0.230

100+ parts

-

1k+ parts

-

10k+ parts

$0.225

3,351

$0.230

-

-

$0.225

Argo Parts USA

USA . 2,353 parts In-Stock

1+ parts

$0.230

100+ parts

-

1k+ parts

-

10k+ parts

$0.223

2,353

$0.230

-

-

$0.223

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.230

100+ parts

-

1k+ parts

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10k+ parts

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2,000

$0.230

-

-

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Aztec Data Supply Inc.

USA . 2,698 parts In-Stock

1+ parts

$0.461

100+ parts

-

1k+ parts

-

10k+ parts

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2,698

$0.461

-

-

-

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.502

100+ parts

$0.457

1k+ parts

$0.412

10k+ parts

-

600

$0.502

$0.457

$0.412

-

AZTECH Wire

Italy . 303 parts In-Stock

1+ parts

$22.240

100+ parts

-

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303

$22.240

-

-

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Andel Nordic

Denmark . 500 parts In-Stock

1+ parts

$40.110

100+ parts

-

1k+ parts

$28.079

10k+ parts

$28.079

500

$40.110

-

$28.079

$28.079

Perfect Parts

USA . 57,232 parts In-Stock

1+ parts

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57,232

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Eastek

USA . 31,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.413

10k+ parts

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31,000

-

-

$0.413

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QUARKTWIN TECHNOLOGY LTD

USA . 22,424 parts In-Stock

1+ parts

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22,424

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Futuretech Components

Singapore . 10,000 parts In-Stock

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Glotronic Ltd.

UK . 6,400 parts In-Stock

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6,400

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iodParts Technologies Inc.

India . 5,254 parts In-Stock

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5,254

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,000

-

-

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Robosynatics

Brazil . 200 parts In-Stock

1+ parts

-

100+ parts

$5.191

1k+ parts

$5.191

10k+ parts

$5.191

200

-

$5.191

$5.191

$5.191

Lucentia Tech

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$5.191

1k+ parts

$5.191

10k+ parts

$5.191

200

-

$5.191

$5.191

$5.191

Overview

Elevate your amplifier designs with the BCP5616H6327XTSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Power Bipolar Junction Transistors that guarantee reliability and efficiency. This NPN transistor is ideal for various applications, providing a maximum VCEsat of 0.5V and a minimum DC current gain (hFE) of 100. With a small outline package style and Gull Wing terminal form, this transistor offers easy surface mount installation and excellent performance. Trust Infineon for superior products that bring value and innovation to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides protection and reliability for the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification applications, making it versatile and widely compatible.

Configuration: SINGLE

Simplified design for easier integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Easy to mount on circuit boards, saving space and facilitating automated assembly processes.

Maximum VCEsat: 0.5 V

Low saturation voltage leads to improved efficiency and reduced power dissipation.

Package Shape: RECTANGULAR

Standard shape that fits well into various electronic designs.

Terminal Form: GULL WING

Allows for easy soldering and good mechanical stability.

No. of Terminals: 4

Sufficient number of terminals for connection flexibility in circuit designs.

Maximum Power Dissipation (Abs): 2 W

Can handle high power levels without overheating, ensuring reliability in demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained designs.

Minimum DC Current Gain (hFE): 100

High gain ensures good signal amplification.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility and reliability in various environments.

Maximum Collector-Emitter Voltage: 80 V

High voltage rating for compatibility with different power supply voltages.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability for transistors.

Maximum Collector Current (IC): 1 A

High current rating for handling significant power loads.

Terminal Finish: TIN

Tin finish for good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal configuration for enhanced stability in circuit connections.

Case Connection: COLLECTOR

Clearly designated connection point for the collector terminal.

Reference Standard: AEC-Q101

Compliance with automotive industry standards for quality and reliability.

Nominal Transition Frequency (fT): 100 MHz

High frequency response for accurate signal processing in amplification circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP5616H6327XTSA1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

TR, 7 INCH; 1000

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP5616H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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