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BCP53-16T3G

Onsemi

BCP53-16T3G by Onsemi

BCP53-16T3G by Onsemi is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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RS (Exports)

UK . 1,664 parts In-Stock

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$0.050

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1,664

$0.050

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Arrow

USA . 4,000 parts In-Stock

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$0.122

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$0.122

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RS Americas

USA . 5,064 parts In-Stock

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$0.182

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$0.147

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$0.133

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$0.119

5,064

$0.182

$0.147

$0.133

$0.119

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$1.259

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$1.196

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$1.196

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450

$1.259

$1.196

$1.196

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Chip1Stop

Japan . 5,845 parts In-Stock

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-

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$0.127

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$0.118

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$0.116

5,845

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$0.127

$0.118

$0.116

Verical

USA . 4,845 parts In-Stock

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$0.142

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$0.122

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$0.116

4,845

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$0.142

$0.122

$0.116

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$0.115

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100

$0.115

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Digiode

USA . 2,310 parts In-Stock

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$0.173

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2,310

$0.173

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Bristol Electronics

USA . 114 parts In-Stock

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$0.600

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$0.300

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114

$0.600

$0.300

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NAC Semi

USA . 80,000 parts In-Stock

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$0.152

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$0.152

VNN

France . 37,226 parts In-Stock

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Chip Stock

USA . 29,000 parts In-Stock

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Flip Electronics

USA . 14,848 parts In-Stock

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Vyrian

USA . 8,888 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,000 parts In-Stock

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4,000

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ComSIT USA

USA . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,717 parts In-Stock

1+ parts

$0.108

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6,717

$0.108

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Semicontronic

India . 6,413 parts In-Stock

1+ parts

$0.108

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$0.105

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$0.105

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6,413

$0.108

$0.105

$0.105

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Corohmni

South Africa . 446 parts In-Stock

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$0.110

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446

$0.110

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Argo Parts USA

USA . 347 parts In-Stock

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$0.114

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$0.111

347

$0.114

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$0.111

Corphita

USA . 894 parts In-Stock

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$0.164

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894

$0.164

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Allen Electronics Distributors

USA . 5,064 parts In-Stock

1+ parts

$0.182

100+ parts

$0.147

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$0.119

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5,064

$0.182

$0.147

$0.119

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Continental Prestige Electronics

USA . 3,386 parts In-Stock

1+ parts

$0.429

100+ parts

$0.179

1k+ parts

$0.094

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3,386

$0.429

$0.179

$0.094

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.259

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$1.196

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$1.196

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450

$1.259

$1.196

$1.196

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Aztec Data Supply Inc.

USA . 4,483 parts In-Stock

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$1.335

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4,483

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Authorized Procurement Solutions

USA . 516,000 parts In-Stock

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Perfect Parts

USA . 483,824 parts In-Stock

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Eastek

USA . 284,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,797 parts In-Stock

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SupplyDigital Components

Austria . 6,033 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Kulean Microsystems

USA . 3,663 parts In-Stock

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Metaverse IC Inc.

Canada . 3,600 parts In-Stock

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Problanco Electronics

Mexico . 1,668 parts In-Stock

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TANS Electronics

Latvia . 1,137 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.113

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$0.109

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$0.107

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UHIMA Technologies

Türkiye . 864 parts In-Stock

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864

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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200

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Overview

Enhance your amplifier designs with the BCP53-16T3G Power Bipolar Junction Transistor by Onsemi! Manufactured with top-notch quality and reliability, this PNP transistor offers a maximum collector-emitter voltage of 80V and a minimum DC current gain of 100. Its small outline package and surface mount capabilities make it perfect for various amplifier applications, ensuring optimal performance and efficiency. Trust Onsemi to deliver superior products that bring value and benefits to your projects. Upgrade your amplifiers today with the BCP53-16T3G!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy integration into electronic systems.

Transistor Application: AMPLIFIER

This transistor is specifically designed for amplifier applications, ensuring high performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving space and reducing production costs.

No. of Terminals: 4

The 4 terminals provide necessary connections for the transistor, offering flexibility in circuit design and functionality.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand heat and operate reliably in various environments.

Minimum Collector-Emitter Voltage: 80 V

The high voltage rating ensures the transistor can handle higher voltages, increasing its versatility and applicability in different circuits.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency indicates fast switching speeds and high-frequency operation, making this transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP53-16T3G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP53-16T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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