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NJVMJD127T4G

Onsemi

NJVMJD127T4G by Onsemi

NJVMJD127T4G by Onsemi is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 100V VCEO, 8A IC, and 20W power dissipation. Ideal for amplifier applications due to its high hFE of 100 and operating temperature range from -65 to 150°C.

Median Price

$0.924

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$0.417

100+ parts

$0.396

1k+ parts

$0.396

10k+ parts

-

2,000

$0.417

$0.396

$0.396

-

Mouser Electronics

USA . 1,327 parts In-Stock

1+ parts

$1.430

100+ parts

$0.597

1k+ parts

$0.424

10k+ parts

$0.356

1,327

$1.430

$0.597

$0.424

$0.356

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 604 parts In-Stock

1+ parts

$0.396

100+ parts

-

1k+ parts

-

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604

$0.396

-

-

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Nova Conductors

Japan . 92 parts In-Stock

1+ parts

$0.414

100+ parts

-

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-

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92

$0.414

-

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Flip Electronics

USA . 377,500 parts In-Stock

1+ parts

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377,500

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Chip Stock

USA . 18,500 parts In-Stock

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18,500

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Cyclops Electronics Ltd

UK . 16,380 parts In-Stock

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16,380

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NAC Semi

USA . 7,500 parts In-Stock

1+ parts

-

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$0.675

7,500

-

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$0.675

Vyrian

USA . 5,869 parts In-Stock

1+ parts

-

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5,869

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ComSIT USA

USA . 272 parts In-Stock

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272

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ComSIT Distribution GmbH

Germany . 272 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,324 parts In-Stock

1+ parts

$0.375

100+ parts

-

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-

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2,324

$0.375

-

-

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Corohmni

South Africa . 265 parts In-Stock

1+ parts

$0.405

100+ parts

-

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265

$0.405

-

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Continental Prestige Electronics

USA . 6,368 parts In-Stock

1+ parts

$0.414

100+ parts

-

1k+ parts

-

10k+ parts

$0.405

6,368

$0.414

-

-

$0.405

Argo Parts USA

USA . 4,506 parts In-Stock

1+ parts

$0.414

100+ parts

-

1k+ parts

-

10k+ parts

$0.401

4,506

$0.414

-

-

$0.401

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.414

100+ parts

-

1k+ parts

$0.393

10k+ parts

$0.385

500

$0.414

-

$0.393

$0.385

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.417

100+ parts

$0.396

1k+ parts

$0.396

10k+ parts

-

2,000

$0.417

$0.396

$0.396

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Modulus Dynamics

Lithuania . 100 parts In-Stock

1+ parts

$0.459

100+ parts

$0.455

1k+ parts

$0.441

10k+ parts

-

100

$0.459

$0.455

$0.441

-

Semicontronic

India . 2,666 parts In-Stock

1+ parts

$0.770

100+ parts

$0.751

1k+ parts

$0.747

10k+ parts

-

2,666

$0.770

$0.751

$0.747

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Ampacity Inc.

Singapore . 2,549 parts In-Stock

1+ parts

$0.770

100+ parts

-

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2,549

$0.770

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Aztec Data Supply Inc.

USA . 247 parts In-Stock

1+ parts

$1.375

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247

$1.375

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RC Electronics

USA . 15,000 parts In-Stock

1+ parts

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$0.420

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$0.390

10k+ parts

$0.370

15,000

-

$0.420

$0.390

$0.370

Lixinc

USA . 10,628 parts In-Stock

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Kulean Microsystems

USA . 7,796 parts In-Stock

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TANS Electronics

Latvia . 5,962 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 3,006 parts In-Stock

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SupplyDigital Components

Austria . 2,376 parts In-Stock

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iodParts Technologies Inc.

India . 968 parts In-Stock

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968

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UHIMA Technologies

Türkiye . 561 parts In-Stock

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561

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GreenTree Electronics

Israel . 75 parts In-Stock

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75

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Robosynatics

Brazil . 10 parts In-Stock

1+ parts

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$0.148

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$0.148

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$0.148

10

-

$0.148

$0.148

$0.148

Lucentia Tech

USA . 10 parts In-Stock

1+ parts

-

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$0.148

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$0.148

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$0.148

10

-

$0.148

$0.148

$0.148

Overview

Experience superior performance and reliability with the NJVMJD127T4G by Onsemi. As a leading manufacturer in the industry, Onsemi brings you a high-quality Power BJT that is ideal for amplifier applications. With its Darlington configuration, built-in diode, and resistor, this PNP transistor offers unmatched value and efficiency. Whether you're looking to enhance your audio system or improve your electronic projects, this surface-mount transistor will deliver exceptional results. Trust Onsemi to provide cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

Allows for easy control of current flow in circuits and is commonly used in amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers high gain and efficiency, making it ideal for amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals effectively and efficiently.

Surface Mount: YES

Allows for easy installation and space-saving on circuit boards.

Package Shape: RECTANGULAR

Provides a compact design for efficient utilization of space on the circuit board.

Terminal Form: GULL WING

Provides secure connections and ease of soldering for reliable performance.

No. of Terminals: 2

Simplifies circuit design and connections.

Maximum Power Dissipation (Abs): 20 W

Can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): SMALL OUTLINE

Offers a compact size for space-constrained applications.

Minimum DC Current Gain (hFE): 100

Ensures consistent amplification and stability in the circuit.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 100 V

Suitable for a wide range of voltage applications.

Transistor Element Material: SILICON

Provides high conductivity and reliability for long-term performance.

Minimum Operating Temperature: -65 °C

Can operate in extreme cold conditions without loss of functionality.

Maximum Collector Current (IC): 8 A

Can handle high currents for various applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides corrosion resistance and enhances solderability for long-lasting connections.

Terminal Position: SINGLE

Simplifies circuit design and connections.

Case Connection: COLLECTOR

Allows for easy circuit design and layout.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly for reliable connections.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes without damage.

Reference Standard: AEC-Q101

Meets automotive requirements, ensuring high quality and reliability.

Nominal Transition Frequency (fT): 4 MHz

Provides high-frequency response for fast signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD127T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD127T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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