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NJVMJD45H11G

Onsemi

NJVMJD45H11G by Onsemi

NJVMJD45H11G by Onsemi is a PNP BJT transistor for switching applications. With hFE of 40, it supports max VCE of 80V and IC of 8A. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs in automotive electronics.

Median Price

$1.360

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 33 parts In-Stock

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$1.300

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$1.300

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DigiKey

USA . 5,481 parts In-Stock

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$1.360

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$0.597

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$0.441

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$0.334

5,481

$1.360

$0.597

$0.441

$0.334

Mouser Electronics

USA . 1,930 parts In-Stock

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$1.360

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$0.533

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1,930

$1.360

$0.533

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Adafruit Industries

USA . 74 parts In-Stock

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$1.436

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$1.364

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$1.364

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74

$1.436

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$1.364

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Verical

USA . 3,900 parts In-Stock

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$0.311

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3,900

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$0.311

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Distributors (In-Stock)

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Nova Conductors

Japan . 41 parts In-Stock

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$0.487

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41

$0.487

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Digiode

USA . 2,319 parts In-Stock

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$1.216

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2,319

$1.216

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Chip Stock

USA . 20,000 parts In-Stock

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Flip Electronics

USA . 5,100 parts In-Stock

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Vyrian

USA . 168 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 5,387 parts In-Stock

1+ parts

$0.455

100+ parts

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$0.446

5,387

$0.455

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$0.446

Argo Parts USA

USA . 1,764 parts In-Stock

1+ parts

$0.455

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$0.441

1,764

$0.455

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$0.441

Corohmni

South Africa . 264 parts In-Stock

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$0.477

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264

$0.477

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Netroflash

USA . 500 parts In-Stock

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$0.487

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$0.463

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$0.453

500

$0.487

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$0.463

$0.453

Aztec Data Supply Inc.

USA . 1,650 parts In-Stock

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$0.945

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1,650

$0.945

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Semicontronic

India . 505 parts In-Stock

1+ parts

$1.020

100+ parts

$0.994

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$0.989

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505

$1.020

$0.994

$0.989

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Ampacity Inc.

Singapore . 189 parts In-Stock

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$1.020

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$1.020

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Corphita

USA . 1,721 parts In-Stock

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$1.152

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$1.152

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Advanced Electronics

New Zealand . 74 parts In-Stock

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$1.436

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$1.364

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$1.364

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74

$1.436

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$1.364

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AZTECH Wire

Italy . 620 parts In-Stock

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$12.407

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Lixinc

USA . 9,050 parts In-Stock

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TANS Electronics

Latvia . 5,703 parts In-Stock

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SupplyDigital Components

Austria . 3,463 parts In-Stock

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Kulean Microsystems

USA . 2,136 parts In-Stock

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Problanco Electronics

Mexico . 713 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 320 parts In-Stock

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Authorized Procurement Solutions

USA . 33 parts In-Stock

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Overview

Experience the power of superior performance with the NJVMJD45H11G from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for various applications in switching. With a maximum collector-emitter voltage of 80V and a maximum collector current of 8A, this PNP transistor offers exceptional reliability and efficiency. Trust Onsemi to provide you with the best-in-class products that will elevate your projects to new heights. Choose the NJVMJD45H11G for unparalleled value and benefits that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications, making this transistor suitable for switching circuits.

Configuration: SINGLE

Single configuration transistors are easier to use and integrate into circuits, making this transistor user-friendly.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and efficient performance in switching circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on PCBs, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on PCBs, making it easier to design compact circuits.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are suitable for surface mount applications, ensuring reliable performance.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 indicates good amplification capabilities, making this transistor suitable for applications requiring signal amplification.

Maximum Collector-Emitter Voltage: 80 V

With a high maximum collector-emitter voltage of 80 V, this transistor can handle higher voltage levels, adding to its versatility.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a dependable choice for various applications.

Maximum Collector Current (IC): 8 A

The high maximum collector current of 8 A allows this transistor to handle higher current loads, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and ensures stable electrical connections, contributing to the overall reliability of the transistor.

Case Connection: COLLECTOR

The case connection at the collector terminal provides efficient heat dissipation, helping to maintain the temperature within safe limits and ensuring long-term reliability.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this transistor meets strict automotive industry requirements for reliability and performance.

Nominal Transition Frequency (fT): 90 MHz

With a high nominal transition frequency of 90 MHz, this transistor can switch at high speeds, making it ideal for applications requiring fast switching times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD45H11G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD45H11G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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