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NJVMJD31CT4G-VF01

Onsemi

NJVMJD31CT4G-VF01 by Onsemi

NJVMJD31CT4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 10, VCEO of 100V, and IC of 3A. Ideal for amplifier applications, it operates b/w -65 to 150°C and has a transition frequency of 3MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

Median Price

$0.560

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,066 parts In-Stock

1+ parts

$0.436

100+ parts

$0.234

1k+ parts

$0.187

10k+ parts

$0.159

2,066

$0.436

$0.234

$0.187

$0.159

Newark

USA . 2,066 parts In-Stock

1+ parts

$0.560

100+ parts

$0.300

1k+ parts

$0.240

10k+ parts

-

2,066

$0.560

$0.300

$0.240

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Adafruit Industries

USA . 75 parts In-Stock

1+ parts

$0.876

100+ parts

$0.832

1k+ parts

$0.832

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-

75

$0.876

$0.832

$0.832

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Distributors (In-Stock)

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Nova Conductors

Japan . 33 parts In-Stock

1+ parts

$0.396

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33

$0.396

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Digiode

USA . 321 parts In-Stock

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$0.532

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321

$0.532

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Flip Electronics

USA . 50,000 parts In-Stock

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Chip Stock

USA . 28,000 parts In-Stock

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Greenchips

USA . 2,500 parts In-Stock

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2,500

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SIE Connect GmbH - GreenChips

Germany . 2,500 parts In-Stock

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Vyrian

USA . 835 parts In-Stock

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835

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Sensible Micro Corp

USA . 153 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 443 parts In-Stock

1+ parts

$0.388

100+ parts

-

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443

$0.388

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Argo Parts USA

USA . 1,596 parts In-Stock

1+ parts

$0.396

100+ parts

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$0.384

1,596

$0.396

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-

$0.384

Bastille Electronics

Australia . 450 parts In-Stock

1+ parts

$0.396

100+ parts

$0.376

1k+ parts

$0.357

10k+ parts

$0.352

450

$0.396

$0.376

$0.357

$0.352

Continental Prestige Electronics

USA . 2,066 parts In-Stock

1+ parts

$0.436

100+ parts

$0.234

1k+ parts

$0.187

10k+ parts

-

2,066

$0.436

$0.234

$0.187

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Semicontronic

India . 1,020 parts In-Stock

1+ parts

$0.476

100+ parts

$0.464

1k+ parts

$0.462

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1,020

$0.476

$0.464

$0.462

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Ampacity Inc.

Singapore . 739 parts In-Stock

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$0.476

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739

$0.476

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Corphita

USA . 1,581 parts In-Stock

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$0.504

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1,581

$0.504

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Aztec Data Supply Inc.

USA . 10,881 parts In-Stock

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$0.548

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10,881

$0.548

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Advanced Electronics

New Zealand . 75 parts In-Stock

1+ parts

$0.876

100+ parts

$0.832

1k+ parts

$0.832

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75

$0.876

$0.832

$0.832

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Perfect Parts

USA . 352,800 parts In-Stock

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352,800

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Infinite Electronics LLP (Excess)

. 84,177 parts In-Stock

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Lixinc

USA . 8,180 parts In-Stock

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Problanco Electronics

Mexico . 6,380 parts In-Stock

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SupplyDigital Components

Austria . 3,813 parts In-Stock

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TANS Electronics

Latvia . 3,464 parts In-Stock

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ChipstoGo Electronic ltd

UK . 2,500 parts In-Stock

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Kulean Microsystems

USA . 2,131 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Modulus Dynamics

Lithuania . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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346

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Overview

Enhance your electronic projects with the NJVMJD31CT4G-VF01 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors for various applications such as amplifiers. With high reliability and performance, this NPN transistor offers customers exceptional value and benefits. Take advantage of its small outline package and maximum collector-emitter voltage of 100V to elevate your designs. Trust Onsemi for superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy materials provide durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and space in electronic designs.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design, ideal for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering during assembly, ensuring a strong and reliable connection.

No. of Terminals: 2

Two terminals simplify the connection process, reducing the likelihood of wiring errors in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, allowing for more efficient layout and design.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures consistent and stable amplification performance in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures reliability and performance in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage of 100V allows for versatile use in different voltage applications.

Transistor Element Material: SILICON

Silicon transistor element material offers high efficiency and reliability in amplification circuits.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature of -65°C enables operation in extreme temperature conditions without compromising performance.

Maximum Collector Current (IC): 3 A

High maximum collector current of 3A allows for handling higher current loads in the circuit.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies the connection process, reducing complexity in circuit design.

Case Connection: COLLECTOR

Collector case connection ensures proper thermal management and efficient dissipation of heat for reliable performance.

Maximum Time At Peak Reflow Temperature (s): 30

Maximum time at peak reflow temperature of 30s ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C enables efficient soldering during assembly, ensuring a strong and reliable connection.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications.

Nominal Transition Frequency (fT): 3 MHz

Nominal transition frequency of 3MHz indicates high-speed performance in signal amplification and switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD31CT4G-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD31CT4G-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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