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NJVMJD44H11RLG

Onsemi

NJVMJD44H11RLG by Onsemi

NJVMJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates up to 150°C and has an hFE of at least 40. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.893

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.436

100+ parts

$0.436

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$0.436

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-

100

$0.436

$0.436

$0.436

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DigiKey

USA . 1,802 parts In-Stock

1+ parts

$1.350

100+ parts

$0.558

1k+ parts

$0.435

10k+ parts

-

1,802

$1.350

$0.558

$0.435

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Mouser Electronics

USA . 814 parts In-Stock

1+ parts

$1.350

100+ parts

$0.559

1k+ parts

$0.346

10k+ parts

$0.297

814

$1.350

$0.559

$0.346

$0.297

Chip1Stop

Japan . 1,800 parts In-Stock

1+ parts

$2.750

100+ parts

$0.903

1k+ parts

$0.594

10k+ parts

-

1,800

$2.750

$0.903

$0.594

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Rochester

USA . 490,550 parts In-Stock

1+ parts

-

100+ parts

$0.380

1k+ parts

$0.316

10k+ parts

$0.281

490,550

-

$0.380

$0.316

$0.281

Verical

USA . 489,060 parts In-Stock

1+ parts

-

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$0.395

10k+ parts

$0.352

489,060

-

-

$0.395

$0.352

Flip Electronics (Authorized)

USA . 12,600 parts In-Stock

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12,600

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Distributors (In-Stock)

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Digiode

USA . 303 parts In-Stock

1+ parts

$0.295

100+ parts

-

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303

$0.295

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Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.427

100+ parts

-

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650

$0.427

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TME

Poland . 1,549 parts In-Stock

1+ parts

$1.180

100+ parts

$0.499

1k+ parts

$0.449

10k+ parts

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1,549

$1.180

$0.499

$0.449

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Chip Stock

USA . 43,000 parts In-Stock

1+ parts

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43,000

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Flip Electronics

USA . 12,600 parts In-Stock

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12,600

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Vyrian

USA . 7,202 parts In-Stock

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7,202

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NAC Semi

USA . 5,400 parts In-Stock

1+ parts

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$0.620

5,400

-

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-

$0.620

Bristol Electronics

USA . 1,800 parts In-Stock

1+ parts

-

100+ parts

$0.309

1k+ parts

$0.231

10k+ parts

$0.214

1,800

-

$0.309

$0.231

$0.214

Cyclops Electronics Ltd

UK . 538 parts In-Stock

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538

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Distributors (Availability)

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Semicontronic

India . 72,461 parts In-Stock

1+ parts

$0.264

100+ parts

$0.257

1k+ parts

$0.256

10k+ parts

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72,461

$0.264

$0.257

$0.256

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Ampacity Inc.

Singapore . 72,428 parts In-Stock

1+ parts

$0.264

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72,428

$0.264

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Corphita

USA . 176 parts In-Stock

1+ parts

$0.280

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176

$0.280

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Corohmni

South Africa . 128 parts In-Stock

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$0.311

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128

$0.311

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Component Stockers USA

USA . 334,231 parts In-Stock

1+ parts

$0.340

100+ parts

$0.320

1k+ parts

$0.290

10k+ parts

$0.290

334,231

$0.340

$0.320

$0.290

$0.290

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.419

100+ parts

-

1k+ parts

$0.402

10k+ parts

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1,000

$0.419

-

$0.402

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Argo Parts USA

USA . 3,067 parts In-Stock

1+ parts

$0.427

100+ parts

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10k+ parts

$0.415

3,067

$0.427

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$0.415

Continental Prestige Electronics

USA . 1,838 parts In-Stock

1+ parts

$0.427

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$0.419

1,838

$0.427

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$0.419

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.436

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$0.436

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$0.436

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100

$0.436

$0.436

$0.436

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Aztec Data Supply Inc.

USA . 769 parts In-Stock

1+ parts

$1.220

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769

$1.220

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GreenTree Electronics

Israel . 400,000 parts In-Stock

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Perfect Parts

USA . 51,800 parts In-Stock

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TANS Electronics

Latvia . 7,680 parts In-Stock

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7,680

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Kulean Microsystems

USA . 7,068 parts In-Stock

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7,068

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Alle Elektronik GmbH

Germany . 5,160 parts In-Stock

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Kepictronics

USA . 3,389 parts In-Stock

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3,389

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Futuretech Components

Singapore . 2,980 parts In-Stock

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2,980

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Eastek

USA . 1,800 parts In-Stock

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1,800

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Problanco Electronics

Mexico . 1,333 parts In-Stock

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1,333

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SupplyDigital Components

Austria . 977 parts In-Stock

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977

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UHIMA Technologies

Türkiye . 297 parts In-Stock

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297

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Overview

Enhance your power management solutions with the NJVMJD44H11RLG by Onsemi. As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that offer exceptional performance in switching applications. With its NPN configuration and high DC current gain, this transistor ensures reliable operation and efficiency. Whether you're looking to optimize your power systems or enhance device performance, the NJVMJD44H11RLG provides the value and benefits you need. Upgrade your electronics with Onsemi's innovative technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and durability for the component.

Polarity or Channel Type: NPN

NPN type allows for easy control and switching functionality in transistor circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability enables easy and secure mounting on PCBs, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows the transistor to handle heavy loads without overheating.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures and operate reliably in various environments.

Maximum Collector-Emitter Voltage: 80 V

This high voltage rating allows the transistor to handle larger voltages, expanding its range of applications.

Maximum Collector Current (IC): 8 A

A high collector current rating enables the transistor to handle large currents with ease, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 85 MHz

With a high transition frequency, this transistor can switch rapidly between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD44H11RLG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD44H11RLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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