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NJVMJD117T4G

Onsemi

NJVMJD117T4G by Onsemi

NJVMJD117T4G by Onsemi is a PNP BJT with Darlington configuration. Features 100V VCEO, 2A IC, and 20W power dissipation. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz.

Median Price

$0.414

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$2.254

100+ parts

$2.051

1k+ parts

$1.848

10k+ parts

-

5,000

$2.254

$2.051

$1.848

-

DigiKey

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.426

2,500

-

-

-

$0.426

Verical

USA . 1,940 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.402

10k+ parts

$0.331

1,940

-

-

$0.402

$0.331

Rochester

USA . 1,940 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.297

10k+ parts

$0.264

1,940

-

$0.357

$0.297

$0.264

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 20 parts In-Stock

1+ parts

$1.000

100+ parts

-

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20

$1.000

-

-

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Digiode

USA . 2,446 parts In-Stock

1+ parts

$2.141

100+ parts

-

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-

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2,446

$2.141

-

-

-

Flip Electronics

USA . 20,000 parts In-Stock

1+ parts

-

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20,000

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-

-

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Chip Stock

USA . 13,525 parts In-Stock

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13,525

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Vyrian

USA . 3,367 parts In-Stock

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3,367

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,492 parts In-Stock

1+ parts

$0.328

100+ parts

$0.320

1k+ parts

$0.318

10k+ parts

-

3,492

$0.328

$0.320

$0.318

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Ampacity Inc.

Singapore . 3,261 parts In-Stock

1+ parts

$0.328

100+ parts

-

1k+ parts

-

10k+ parts

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3,261

$0.328

-

-

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Aztec Data Supply Inc.

USA . 189 parts In-Stock

1+ parts

$0.346

100+ parts

-

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189

$0.346

-

-

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Corohmni

South Africa . 128 parts In-Stock

1+ parts

$0.386

100+ parts

-

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128

$0.386

-

-

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Argo Parts USA

USA . 4,280 parts In-Stock

1+ parts

$0.779

100+ parts

-

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-

10k+ parts

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4,280

$0.779

-

-

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Continental Prestige Electronics

USA . 2,444 parts In-Stock

1+ parts

$0.779

100+ parts

-

1k+ parts

-

10k+ parts

$0.763

2,444

$0.779

-

-

$0.763

Corphita

USA . 330 parts In-Stock

1+ parts

$2.029

100+ parts

-

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-

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330

$2.029

-

-

-

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$2.254

100+ parts

$2.051

1k+ parts

$1.848

10k+ parts

-

5,000

$2.254

$2.051

$1.848

-

Perfect Parts

USA . 71,819 parts In-Stock

1+ parts

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71,819

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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TANS Electronics

Latvia . 4,377 parts In-Stock

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4,377

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Problanco Electronics

Mexico . 3,944 parts In-Stock

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3,944

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Kulean Microsystems

USA . 3,382 parts In-Stock

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3,382

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SupplyDigital Components

Austria . 3,030 parts In-Stock

1+ parts

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3,030

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-

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UHIMA Technologies

Türkiye . 696 parts In-Stock

1+ parts

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696

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.980

1k+ parts

$0.950

10k+ parts

$0.930

50

-

$0.980

$0.950

$0.930

Overview

Enhance your power management solutions with the NJVMJD117T4G from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like this PNP Darlington transistor. With a maximum collector-emitter voltage of 100V and a minimum DC current gain of 1000, this small outline package offers high performance and reliability for a wide range of applications. Whether you're designing automotive systems or industrial equipment, the NJVMJD117T4G provides the value, benefits, and advantages you need to optimize your projects. Trust Onsemi for superior quality and innovation in power transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.

Polarity or Channel Type: PNP

The PNP polarity allows for high speed switching in electronic circuits, making it suitable for power control applications.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and allows for lower saturation voltage, making it efficient for amplification and switching purposes.

Maximum Power Dissipation (Abs): 20 W

With a high power dissipation capability of 20 W, this transistor can handle high power loads without overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating of 100 V allows for higher voltage applications without risk of breakdown.

Minimum DC Current Gain (hFE): 1000

The high minimum DC current gain of 1000 indicates strong amplification capability, making it suitable for signal amplification in circuits.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle high current loads efficiently.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds at peak temperature of 260°C ensures quick and reliable soldering during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality standards suitable for automotive applications.

Nominal Transition Frequency (fT): 25 MHz

The high nominal transition frequency of 25 MHz indicates fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD117T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD117T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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