Loading...

DARLINGTON Power Bipolar Junction Transistors (BJT) 21

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NJVNJD35N04G by Onsemi

NJVNJD35N04G

Onsemi

NJVNJD35N04G by Onsemi is a NPN Darlington BJT with 45W power dissipation, 4A collector current, and 300 min hFE. Ideal for automotive applications due to AEC-Q101 standard compliance and high transition frequency of 90MHz.

4 A

DARLINGTON

300

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

45 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

90 MHz

BD652-S by Bourns

BD652-S

Bourns

The Bourns BD652-S is a PNP Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.

COLLECTOR

8 A

120 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

BD651-S by Bourns

BD651-S

Bourns

The Bourns BD651-S is a NPN Darlington transistor with 750 min hFE, 120V VCE, and 8A IC. Ideal for power applications in industries like automotive and telecommunications due to its high current gain and collector-emitter voltage capabilities.

COLLECTOR

8 A

120 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

NJVMJD112G by Onsemi

NJVMJD112G

Onsemi

NJVMJD112G by Onsemi is a NPN Darlington BJT with 2A IC, 20W Pd, and hFE of 1000. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency of 25MHz. Its small outline package makes it suitable for surface mount designs in harsh environments.

2 A

DARLINGTON

1000

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SILICON

25 MHz

BDX53CS by Motorola

BDX53CS

Motorola

BDX53CS by Motorola is a NPN Darlington transistor with a min DC current gain of 750 and max collector-emitter voltage of 100V. Ideal for switching applications, it has a max collector current of 8A. This through-hole transistor in plastic/epoxy package is suitable for flange mount installations.

COLLECTOR

8 A

100 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDX54CS by Motorola

BDX54CS

Motorola

Motorola's BDX54CS is a PNP power BJT with a Darlington configuration. It has a max collector-emitter voltage of 100V and max collector current of 8A, making it ideal for switching applications. With a min hFE of 750, this transistor is designed for high-performance in various electronic circuits.

COLLECTOR

8 A

100 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDX34BTU by Fairchild Semiconductor

BDX34BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

10 A

80 V

DARLINGTON

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

MJD128T4 by Onsemi

MJD128T4

Onsemi

MJD128T4 by Onsemi is a PNP Darlington transistor with 120V max collector-emitter voltage, 8A max collector current, and 20W max power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals.

COLLECTOR

8 A

120 V

DARLINGTON

100

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

20 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

TIP120-BP by Micro Commercial Components

TIP120-BP

Micro Commercial Components

TIP120-BP by Micro Commercial Components is a NPN Darlington BJT with hFE of 1000, VCE of 60V, and IC of 5A. Ideal for amplifier applications, it features a plastic/epoxy body, through-hole terminals, and matte tin finish.

5 A

60 V

DARLINGTON

1000

TO-220AB

R-PSFM-T3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

10

AMPLIFIER

SILICON

TIP122-BP by Micro Commercial Components

TIP122-BP

Micro Commercial Components

TIP122-BP by Micro Commercial Components is a NPN Darlington BJT with hFE of 1000, VCE of 100V, and IC of 5A. It is used in power applications requiring high current gain and voltage handling capabilities. The package style is flange mount with through-hole terminals for easy installation.

5 A

100 V

DARLINGTON

1000

TO-220AB

R-PSFM-T3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

10

SILICON

MJE271G by Onsemi

MJE271G

Onsemi

MJE271G by Onsemi is a PNP power BJT with 100V VCEO, 2A IC, and 15W Ptot. Ideal for high-power applications due to its Darlington configuration and 6MHz fT. Package style is flange mount with through-hole terminals.

2 A

100 V

DARLINGTON

1500

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

15 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SILICON

6 MHz

TIP131G by Onsemi

TIP131G

Onsemi

TIP131G by Onsemi is a NPN Darlington transistor with 80V max collector-emitter voltage, 8A max collector current, and 70W max power dissipation. Ideal for amplifier applications due to its high DC current gain of 1000 (hFE). Package style: Flange mount, terminal form: Through-hole.

COLLECTOR

8 A

80 V

DARLINGTON

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

TIP132G by Onsemi

TIP132G

Onsemi

TIP132G by Onsemi is a NPN Darlington BJT with 100V VCEO, 8A IC, and 70W Ptot. Ideal for amplifier applications, it has hFE of 1000 and can operate up to 150 °C. Package style is flange mount with through-hole terminals.

COLLECTOR

8 A

100 V

DARLINGTON

1000

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

70 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

BDW93C-S by Bourns

BDW93C-S

Bourns

The Bourns BDW93C-S is a NPN Darlington transistor with hFE of 100, IC of 12A, and VCE of 100V. Ideal for power applications in temperatures up to 150°C. Suitable for use in various electronic circuits requiring high current amplification.

COLLECTOR

12 A

100 V

DARLINGTON

100

TO-220AB

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SILICON

FZT600BQTA by Diodes Incorporated

FZT600BQTA

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

HIGH RELIABILITY

COLLECTOR

2 A

15 pF

140 V

DARLINGTON

5000

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

1.2 V

2N6055PBFREE by Central Semiconductor

2N6055PBFREE

Central Semiconductor

2N6055PBFREE by Central Semiconductor is a NPN Darlington BJT with max. collector-emitter voltage of 60V and max. collector current of 8A. It has a min DC current gain of 100, making it ideal for switching applications in various industries due to its high transition frequency of 4MHz and wide operating temperature range from -65°C to 200°C.

8 A

60 V

DARLINGTON

100

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

NO

MATTE TIN OVER NICKEL

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

2N6052PBFREE by Central Semiconductor

2N6052PBFREE

Central Semiconductor

2N6052PBFREE by Central Semiconductor is a PNP Darlington power BJT with a max VCEsat of 3V. It is used for switching applications and has a max collector-emitter voltage of 100V.

COLLECTOR

12 A

500 pF

100 V

DARLINGTON

100

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

150 W

NO

MATTE TIN

PIN/PEG

BOTTOM

10

SWITCHING

SILICON

4 MHz

3 V

TIP112PBFREE by Central Semiconductor

TIP112PBFREE

Central Semiconductor

TIP112PBFREE by Central Semiconductor is a NPN Darlington BJT with 2.5V VCEsat, 50W power dissipation, and 100V VCEO. Ideal for amplifier applications, it has a hFE of 500 and operates b/w -65 to 150 °C. Package style is flange mount with matte tin over nickel finish in a rectangular shape with through-hole terminals.

2 A

100 pF

100 V

DARLINGTON

500

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2.5 V

TIP112TIN/LEAD by Central Semiconductor

TIP112TIN/LEAD

Central Semiconductor

TIP112TIN/LEAD by Central Semiconductor is a NPN Darlington BJT with max VCEsat of 2.5V, hFE of 500, and IC of 2A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a max power dissipation of 50W in a plastic package style.

2 A

100 pF

100 V

DARLINGTON

500

TO-220AB

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

25 MHz

2.5 V

FZT705QTA by Diodes Incorporated

FZT705QTA

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

15 pF

120 V

DARLINGTON

2000

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

160 MHz

2.5 V

MJE270TG by Onsemi

MJE270TG

Onsemi

MJE270TG by Onsemi is a NPN Darlington BJT with max VCEsat of 3V, hFE of 1500, and IC of 2A. Ideal for power applications, it has a max power dissipation of 15W and operates b/w -65 to 150 °C. Suitable for use in various electronic circuits requiring high current amplification.

COLLECTOR

2 A

100 V

DARLINGTON

1500

TO-225

R-PSFM-T3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

1.5 W

15 W

NO

THROUGH-HOLE

SINGLE

SILICON

6 MHz

3 V