Loading...

MJE271G

Onsemi

MJE271G by Onsemi

MJE271G by Onsemi is a PNP power BJT with 100V VCEO, 2A IC, and 15W Ptot. Ideal for high-power applications due to its Darlington configuration and 6MHz fT. Package style is flange mount with through-hole terminals.

Median Price

$1.116

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5,978 parts In-Stock

1+ parts

$1.730

100+ parts

$0.497

1k+ parts

$0.361

10k+ parts

-

5,978

$1.730

$0.497

$0.361

-

Rochester

USA . 9,677 parts In-Stock

1+ parts

-

100+ parts

$0.502

1k+ parts

$0.417

10k+ parts

$0.371

9,677

-

$0.502

$0.417

$0.371

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 197 parts In-Stock

1+ parts

$0.391

100+ parts

-

1k+ parts

-

10k+ parts

-

197

$0.391

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.397

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.397

-

-

-

Component Electronics Inc.

Canada . 12 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

10k+ parts

-

12

$1.150

$0.870

$0.750

-

Vyrian

USA . 8,398 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,398

-

-

-

-

Extreme Components

USA . 71 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

71

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,077 parts In-Stock

1+ parts

$0.371

100+ parts

-

1k+ parts

-

10k+ parts

-

1,077

$0.371

-

-

-

Corohmni

South Africa . 121 parts In-Stock

1+ parts

$0.412

100+ parts

-

1k+ parts

-

10k+ parts

-

121

$0.412

-

-

-

Component Stockers USA

USA . 13,447 parts In-Stock

1+ parts

$0.420

100+ parts

$0.400

1k+ parts

$0.360

10k+ parts

$0.360

13,447

$0.420

$0.400

$0.360

$0.360

AZTECH Wire

Italy . 130 parts In-Stock

1+ parts

$17.320

100+ parts

-

1k+ parts

-

10k+ parts

-

130

$17.320

-

-

-

Perfect Parts

USA . 41,205 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

41,205

-

-

-

-

Kepictronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30,000

-

-

-

-

Continental Prestige Electronics

USA . 10,677 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.391

10k+ parts

-

10,677

-

-

$0.391

-

SupplyDigital Components

Austria . 8,321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,321

-

-

-

-

Problanco Electronics

Mexico . 8,023 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,023

-

-

-

-

Authorized Procurement Solutions

USA . 5,978 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,978

-

-

-

-

GreenTree Electronics

Israel . 5,978 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,978

-

-

-

-

TANS Electronics

Latvia . 2,937 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,937

-

-

-

-

Kulean Microsystems

USA . 2,818 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,818

-

-

-

-

UHIMA Technologies

Türkiye . 781 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

781

-

-

-

-

Overview

Discover the reliable and high-quality MJE271G power bipolar junction transistor by Onsemi, a leading manufacturer in the industry. Ideal for various applications such as power supplies and motor controls, this PNP Darlington transistor offers exceptional performance and durability. With a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150°C, this transistor ensures efficient operation and longevity. Trust Onsemi's reputation for excellence and choose the MJE271G for your next project to experience superior quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications, making this product suitable for various power circuit designs.

Configuration: DARLINGTON

Darlington configuration offers high current gain and low saturation voltage, making this transistor ideal for applications where amplification is crucial.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows this transistor to function reliably in a wide range of environments.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating makes this transistor suitable for high-voltage applications.

Maximum Collector Current (IC): 2 A

With a high collector current rating, this transistor can handle large currents, making it beneficial for power applications.

Nominal Transition Frequency (fT): 6 MHz

The high transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE271G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

1500

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE271G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20