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MJE2955TG

Onsemi

MJE2955TG by Onsemi

MJE2955TG by Onsemi is a PNP BJT transistor with 10A max collector current and 75W power dissipation. Ideal for switching applications, it has a max operating temp of 150°C and a collector-emitter voltage of 60V. With a min hFE of 5, this transistor is designed for high-power requirements in various electronic circuits.

Median Price

$0.620

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,237 parts In-Stock

1+ parts

$0.411

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1,237

$0.411

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Chip1Stop

Japan . 785 parts In-Stock

1+ parts

$0.619

100+ parts

$0.414

1k+ parts

$0.391

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785

$0.619

$0.414

$0.391

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Farnell

UK . 640 parts In-Stock

1+ parts

$0.715

100+ parts

$0.384

1k+ parts

$0.307

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640

$0.715

$0.384

$0.307

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Mouser Electronics

USA . 849 parts In-Stock

1+ parts

$1.250

100+ parts

$0.698

1k+ parts

$0.490

10k+ parts

$0.448

849

$1.250

$0.698

$0.490

$0.448

DigiKey

USA . 271 parts In-Stock

1+ parts

$1.620

100+ parts

$0.684

1k+ parts

$0.491

10k+ parts

$0.391

271

$1.620

$0.684

$0.491

$0.391

Element14

Singapore . 856 parts In-Stock

1+ parts

$1.710

100+ parts

$0.857

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$0.623

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$0.611

856

$1.710

$0.857

$0.623

$0.611

Verical

USA . 1,700 parts In-Stock

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$0.481

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1,700

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$0.481

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Master Electronics

USA . 1,700 parts In-Stock

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$0.375

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$0.354

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$0.338

1,700

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$0.375

$0.354

$0.338

Avnet

USA . 1,550 parts In-Stock

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1,550

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Future Electronics

Canada . 350 parts In-Stock

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$0.620

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$0.595

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$0.570

350

-

$0.620

$0.595

$0.570

Rochester

USA . 21 parts In-Stock

1+ parts

-

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$0.531

1k+ parts

$0.441

10k+ parts

$0.393

21

-

$0.531

$0.441

$0.393

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 956 parts In-Stock

1+ parts

$0.413

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956

$0.413

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Nova Conductors

Japan . 34 parts In-Stock

1+ parts

$0.479

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34

$0.479

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TME

Poland . 176 parts In-Stock

1+ parts

$1.120

100+ parts

$0.526

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176

$1.120

$0.526

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Flip Electronics

USA . 4,300 parts In-Stock

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Chip Stock

USA . 4,080 parts In-Stock

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4,080

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IBS Electronics

USA . 2,050 parts In-Stock

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$0.870

1k+ parts

$0.582

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$0.554

2,050

-

$0.870

$0.582

$0.554

Vyrian

USA . 1,280 parts In-Stock

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1,280

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Bristol Electronics

USA . 342 parts In-Stock

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342

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NAC Semi

USA . 300 parts In-Stock

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$1.150

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300

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$1.150

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EZ Electronic Parts

Israel . 60 parts In-Stock

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60

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Sensible Micro Corp

USA . 50 parts In-Stock

1+ parts

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100+ parts

$0.722

1k+ parts

$0.666

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50

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$0.722

$0.666

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EMSNET

USA . 50 parts In-Stock

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50

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Inventory MP

USA . 32 parts In-Stock

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32

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Prism Electronics

USA . 20 parts In-Stock

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North Shore Components

USA . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 972 parts In-Stock

1+ parts

$0.370

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972

$0.370

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Corphita

USA . 89 parts In-Stock

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$0.392

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89

$0.392

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Corohmni

South Africa . 51 parts In-Stock

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$0.435

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51

$0.435

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.469

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$0.451

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100

$0.469

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$0.451

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Argo Parts USA

USA . 566 parts In-Stock

1+ parts

$0.479

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10k+ parts

$0.465

566

$0.479

-

-

$0.465

Benley Electronics

USA . 1 parts In-Stock

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$0.800

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1

$0.800

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Continental Prestige Electronics

USA . 423 parts In-Stock

1+ parts

$0.835

100+ parts

$0.604

1k+ parts

$0.394

10k+ parts

$0.354

423

$0.835

$0.604

$0.394

$0.354

Allen Electronics Distributors

USA . 41 parts In-Stock

1+ parts

$0.930

100+ parts

$0.560

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41

$0.930

$0.560

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Lixinc

USA . 17,109 parts In-Stock

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Perfect Parts

USA . 12,882 parts In-Stock

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Problanco Electronics

Mexico . 4,888 parts In-Stock

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Kulean Microsystems

USA . 4,533 parts In-Stock

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4,533

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Kepictronics

USA . 3,650 parts In-Stock

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3,650

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SupplyDigital Components

Austria . 1,429 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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TANS Electronics

Latvia . 773 parts In-Stock

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773

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ChipTracer

USA . 342 parts In-Stock

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342

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UHIMA Technologies

Türkiye . 209 parts In-Stock

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209

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iodParts Technologies Inc.

India . 180 parts In-Stock

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180

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Authorized Procurement Solutions

USA . 150 parts In-Stock

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150

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Computer Components Inc. - USA

USA . 50 parts In-Stock

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50

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Overview

Unleash the power of innovation with the MJE2955TG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are designed for optimal performance in switching applications. The PNP configuration and high collector current make this transistor ideal for a wide range of projects. With a maximum power dissipation of 75W and a maximum operating temperature of 150°C, the MJE2955TG offers unmatched reliability and efficiency. Trust Onsemi to provide you with cutting-edge technology that will take your designs to the next level. Choose the MJE2955TG and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuit designs, enhancing flexibility and functionality.

Configuration: SINGLE

The single configuration simplifies installation and reduces complexity in circuit setups, making it user-friendly.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers efficient and reliable performance in controlling electrical signals.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy mounting and placement, ensuring convenience and versatility in different setups.

Terminal Form: THROUGH-HOLE

The through-hole terminals make soldering connections secure and straightforward, ensuring stable performance in the long run.

No. of Terminals: 3

With three terminals, this transistor offers essential connections for effective functionality in various electronic circuits.

Maximum Power Dissipation (Abs): 75 W

With a high power dissipation capacity, this transistor can handle demanding loads and ensure optimal performance under heavy usage.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting, ensuring reliability in diverse environments.

Minimum DC Current Gain (hFE): 5

The minimum DC current gain of 5 ensures consistent amplification of signals, contributing to stable and reliable circuit operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and maintain performance in demanding conditions.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60V allows this transistor to handle high voltages safely, enhancing its versatility in various applications.

Transistor Element Material: SILICON

The silicon material used in the transistor element provides high conductivity and efficiency, ensuring stable performance and longevity.

Maximum Collector Current (IC): 10 A

With a high maximum collector current rating, this transistor can handle significant loads with ease, making it a reliable choice for power applications.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and resistance to corrosion, enhancing the overall reliability and longevity of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies connections and setup, offering convenience and ease of use in circuit designs.

Case Connection: COLLECTOR

The collector case connection ensures efficient heat dissipation and helps maintain stable performance during operation.

Nominal Transition Frequency (fT): 2 MHz

With a nominal transition frequency of 2MHz, this transistor offers fast response times and high-frequency capabilities, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE2955TG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE2955TG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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