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MJE210G

Onsemi

MJE210G by Onsemi

MJE210G by Onsemi is a PNP BJT transistor with 40V VCE, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 65MHz and single configuration in a plastic/epoxy package. Operating up to 150°C, it has through-hole terminals with matte tin finish.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 26 parts In-Stock

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$0.281

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$0.281

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Arrow

USA . 213 parts In-Stock

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$0.352

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$0.289

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$0.221

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$0.216

213

$0.352

$0.289

$0.221

$0.216

EBV Elektronik

Germany . 1,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 400 parts In-Stock

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400

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Verical

USA . 213 parts In-Stock

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$0.289

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$0.221

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$0.216

213

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$0.289

$0.221

$0.216

Rochester

USA . 4 parts In-Stock

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$0.390

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$0.323

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$0.288

4

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$0.390

$0.323

$0.288

Distributors (In-Stock)

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Nova Conductors

Japan . 59 parts In-Stock

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$0.255

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59

$0.255

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Digiode

USA . 2,349 parts In-Stock

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$0.267

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2,349

$0.267

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Component Electronics Inc.

Canada . 6 parts In-Stock

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$1.150

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$0.870

1k+ parts

$0.750

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6

$1.150

$0.870

$0.750

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Chip Stock

USA . 23,500 parts In-Stock

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23,500

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R&J Components

USA . 6,413 parts In-Stock

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Vyrian

USA . 3,098 parts In-Stock

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EMSNET

USA . 1,009 parts In-Stock

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Cyclops Electronics Ltd

UK . 634 parts In-Stock

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634

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Flip Electronics

USA . 400 parts In-Stock

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400

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ComSIT Distribution GmbH

Germany . 399 parts In-Stock

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Holdelec - ElecDif-Pro

France . 178 parts In-Stock

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Pegasus Components GmbH

Germany . 100 parts In-Stock

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100

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Sea View Technologies

USA . 32 parts In-Stock

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32

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Bristol Electronics

USA . 32 parts In-Stock

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32

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ACDS - Activité Composants Distribution Service

France . 7 parts In-Stock

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7

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LittleDiode

UK . 5 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 16,594 parts In-Stock

1+ parts

$0.239

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16,594

$0.239

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Semicontronic

India . 16,542 parts In-Stock

1+ parts

$0.239

100+ parts

$0.233

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$0.232

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16,542

$0.239

$0.233

$0.232

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Corohmni

South Africa . 429 parts In-Stock

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$0.250

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429

$0.250

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Corphita

USA . 1,788 parts In-Stock

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$0.253

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1,788

$0.253

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Argo Parts USA

USA . 4,268 parts In-Stock

1+ parts

$0.255

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$0.247

4,268

$0.255

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$0.247

Netroflash

USA . 50 parts In-Stock

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$0.255

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50

$0.255

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Continental Prestige Electronics

USA . 1,479 parts In-Stock

1+ parts

$0.853

100+ parts

$0.500

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$0.316

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$0.275

1,479

$0.853

$0.500

$0.316

$0.275

Aztec Data Supply Inc.

USA . 84 parts In-Stock

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$1.737

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84

$1.737

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Microchip USA

USA . 1,245 parts In-Stock

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$5.660

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$5.620

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$5.600

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$5.590

1,245

$5.660

$5.620

$5.600

$5.590

AZTECH Wire

Italy . 525 parts In-Stock

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$13.270

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525

$13.270

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Metaverse IC Inc.

Canada . 88,168 parts In-Stock

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GreenTree Electronics

Israel . 23,000 parts In-Stock

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Perfect Parts

USA . 15,516 parts In-Stock

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Kulean Microsystems

USA . 7,686 parts In-Stock

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Lixinc

USA . 7,052 parts In-Stock

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TANS Electronics

Latvia . 5,173 parts In-Stock

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SupplyDigital Components

Austria . 3,877 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 1,743 parts In-Stock

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Eastek

USA . 1,500 parts In-Stock

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Infinite Electronics LLP (Excess)

. 1,267 parts In-Stock

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1,267

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UHIMA Technologies

Türkiye . 220 parts In-Stock

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Computer Components Inc. - USA

USA . 89 parts In-Stock

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Overview

Experience the next level of power and performance with the MJE210G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that are reliable and efficient. The MJE210G falls under the category of Power Bipolar Junction Transistors (BJT) and is perfect for amplifier applications. With a maximum collector-emitter voltage of 40V and a maximum collector current of 5A, this transistor offers unmatched value and benefits to customers. Upgrade your electronic projects today with the MJE210G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for high efficiency in amplification tasks, making this transistor ideal for amplifier applications.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation, this transistor can handle demanding tasks without overheating or malfunctioning.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating makes this transistor suitable for applications that require higher voltage handling capabilities.

Maximum Collector Current (IC): 5 A

This high collector current rating allows the transistor to handle large currents without being damaged, making it reliable for various applications.

Nominal Transition Frequency (fT): 65 MHz

With a high transition frequency, this transistor is capable of delivering fast switching speeds and high-frequency performance, making it suitable for applications that require quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE210G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE210G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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