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MJE253G

Onsemi

MJE253G by Onsemi

MJE253G by Onsemi is a PNP BJT transistor with 100V VCEO, 4A IC, and 40MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W and operates up to 150°C. The through-hole package style makes it suitable for various electronic designs.

Median Price

$0.905

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

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Distrelec

Netherlands . 290 parts In-Stock

1+ parts

$0.905

100+ parts

$0.796

1k+ parts

$0.621

10k+ parts

$0.545

290

$0.905

$0.796

$0.621

$0.545

Farnell

UK . 1,074 parts In-Stock

1+ parts

$1.020

100+ parts

$0.440

1k+ parts

$0.279

10k+ parts

$0.264

1,074

$1.020

$0.440

$0.279

$0.264

DigiKey

USA . 14,371 parts In-Stock

1+ parts

$1.220

100+ parts

$0.502

1k+ parts

$0.354

10k+ parts

$0.271

14,371

$1.220

$0.502

$0.354

$0.271

Mouser Electronics

USA . 3,933 parts In-Stock

1+ parts

$1.220

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$0.501

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$0.389

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3,933

$1.220

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$0.389

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Newark

USA . 1,104 parts In-Stock

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$1.270

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$0.613

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$0.430

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$0.413

1,104

$1.270

$0.613

$0.430

$0.413

Element14

Singapore . 1,094 parts In-Stock

1+ parts

$1.700

100+ parts

$0.653

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$0.450

10k+ parts

$0.428

1,094

$1.700

$0.653

$0.450

$0.428

Verical

USA . 6,000 parts In-Stock

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$0.369

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$0.334

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$0.334

Master Electronics

USA . 6,000 parts In-Stock

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$0.313

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$0.264

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Arrow

USA . 1,000 parts In-Stock

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$0.265

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RS (Exports)

UK . 400 parts In-Stock

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$0.350

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$0.332

400

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$0.332

Rochester

USA . 6 parts In-Stock

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$0.358

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$0.297

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$0.265

6

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$0.265

Chip1Stop

Japan . 1 parts In-Stock

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Vyrian

USA . 974 parts In-Stock

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$0.265

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974

$0.265

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Digiode

USA . 1,105 parts In-Stock

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$0.277

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1,105

$0.277

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Maritex

Poland . 435 parts In-Stock

1+ parts

$0.559

100+ parts

$0.329

1k+ parts

$0.246

10k+ parts

$0.193

435

$0.559

$0.329

$0.246

$0.193

TME

Poland . 317 parts In-Stock

1+ parts

$1.110

100+ parts

$0.445

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$0.371

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317

$1.110

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$0.371

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Cyclops Electronics Ltd

UK . 32,484 parts In-Stock

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Flip Electronics

USA . 26,000 parts In-Stock

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Chip Stock

USA . 22,335 parts In-Stock

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IBS Electronics

USA . 8,000 parts In-Stock

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$0.439

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$0.370

8,000

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$0.439

$0.370

NAC Semi

USA . 2,000 parts In-Stock

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$0.442

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$0.408

2,000

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$0.408

Sensible Micro Corp

USA . 1,704 parts In-Stock

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1,704

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R&J Components

USA . 1,244 parts In-Stock

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Zilex Electronics Inc.

Canada . 620 parts In-Stock

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620

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Classic Components Corporation

USA . 489 parts In-Stock

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ComSIT Distribution GmbH

Germany . 80 parts In-Stock

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80

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MISTER SPROCKETS

USA . 15 parts In-Stock

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15

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Distributors (Availability)

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Component Stockers USA

USA . 21,127 parts In-Stock

1+ parts

$0.220

100+ parts

$0.210

1k+ parts

$0.190

10k+ parts

$0.220

21,127

$0.220

$0.210

$0.190

$0.220

Corphita

USA . 144 parts In-Stock

1+ parts

$0.263

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144

$0.263

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Corohmni

South Africa . 356 parts In-Stock

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$0.265

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356

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Ampacity Inc.

Singapore . 2,685 parts In-Stock

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$0.490

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2,685

$0.490

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Continental Prestige Electronics

USA . 1,203 parts In-Stock

1+ parts

$0.586

100+ parts

$0.344

1k+ parts

$0.209

10k+ parts

$0.193

1,203

$0.586

$0.344

$0.209

$0.193

Modulus Dynamics

Lithuania . 23,107 parts In-Stock

1+ parts

$1.237

100+ parts

$1.237

1k+ parts

$1.237

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23,107

$1.237

$1.237

$1.237

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Perfect Parts

USA . 203,024 parts In-Stock

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203,024

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Kepictronics

USA . 63,000 parts In-Stock

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Infinite Electronics LLP (Excess)

. 29,504 parts In-Stock

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Microchip USA

USA . 9,663 parts In-Stock

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TANS Electronics

Latvia . 5,095 parts In-Stock

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Problanco Electronics

Mexico . 4,361 parts In-Stock

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Argo Parts USA

USA . 4,003 parts In-Stock

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Lixinc

USA . 3,335 parts In-Stock

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S.R.D Solutions

India . 3,290 parts In-Stock

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3,290

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,763 parts In-Stock

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2,763

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Eastek

USA . 2,500 parts In-Stock

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$0.300

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2,500

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$0.300

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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2,500

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 686 parts In-Stock

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686

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iodParts Technologies Inc.

India . 639 parts In-Stock

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639

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Metaverse IC Inc.

Canada . 300 parts In-Stock

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300

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SupplyDigital Components

Austria . 197 parts In-Stock

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Assy Fe

Spain . 45 parts In-Stock

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Overview

Experience the next level of performance with the MJE253G by Onsemi. Crafted with precision and reliability, this Power Bipolar Junction Transistor boasts a range of applications from switching to power control. With high-quality materials like silicon and a maximum collector-emitter voltage of 100V, this PNP transistor offers a seamless single configuration design for ease of use. Trust in the expertise of Onsemi and elevate your projects with the MJE253G's maximum power dissipation of 1.5W and nominal transition frequency of 40MHz. Choose excellence, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

Suitable for circuits where PNP transistors are required, offering versatility in design and compatibility.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliable operation in such scenarios.

Maximum Power Dissipation (Abs): 1.5 W

Can handle a relatively high power dissipation, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 100 V

Capable of withstanding high voltages, enhancing its versatility in different circuit configurations.

Nominal Transition Frequency (fT): 40 MHz

Offers high frequency operation, making it suitable for applications where fast switching speeds are required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE253G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE253G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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