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BD139.10

Motorola

BD139.10 by Motorola

BD139.10 by Motorola is a NPN power BJT with 3 terminals and max. power dissipation of 8W. It is ideal for switching applications, offering a max. collector-emitter voltage of 80V and max. collector current of 1.5A, with a min DC current gain of 63 (hFE).

Median Price

$0.148

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Overview

Enhance the power and efficiency of your electronic projects with the BD139.10 by Motorola, a high-quality Power Bipolar Junction Transistor that guarantees reliability and performance. Designed for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 80V and a maximum collector current of 1.5A, making it ideal for various projects. With a minimum DC current gain of 63 and a maximum power dissipation of 8W, this transistor provides the value and benefits you need to take your creations to the next level. Trust in Motorola's expertise and elevate your designs with the BD139.10.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and is cost-effective.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits.

Configuration: SINGLE

Simplifies circuit design and makes it easier to control.

Transistor Application: SWITCHING

Designed specifically for efficient switching operations.

Package Shape: RECTANGULAR

Allows for easy placement and mounting on circuit boards.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connections in circuits.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs): 8 W

Can handle high power dissipation levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Provides stability and ease of mounting in devices.

Maximum Power Dissipation Ambient: 12.5 W

Ensures the transistor can operate in various ambient conditions without overheating.

Minimum DC Current Gain (hFE): 63

Indicates good amplification capabilities for the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures before performance is affected.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring higher voltage handling.

Transistor Element Material: SILICON

Provides good electrical properties and reliability.

Maximum Collector Current (IC): 1.5 A

Capable of handling moderate levels of current.

Terminal Finish: TIN LEAD

Ensures good conductivity and soldering properties.

Terminal Position: SINGLE

Simplifies circuit connections and layout.

Nominal Transition Frequency (fT): 250 MHz

Indicates good high-frequency performance for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD139.10 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Motorola

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

12.5 W

Maximum Power Dissipation (Abs):

8 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD139.10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Motorola

Motorola Solutions, Inc., is an American video equipment, telecommunications equipment, software, systems and services provider that succeeded Motorola, Inc., following the spinoff of the mobile phone division into Motorola Mobility in 2011. The company is headquartered in Chicago, Illinois.

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