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MJE2955TTU

Onsemi

MJE2955TTU by Onsemi

MJE2955TTU by Onsemi is a PNP BJT transistor with 10A IC, 60V VCE, and 75W power dissipation. Ideal for switching applications due to its single configuration and 2MHz fT. The package style is flange mount with matte tin finish, suitable for through-hole mounting in various electronic devices.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 25 parts In-Stock

1+ parts

$0.294

100+ parts

$0.237

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25

$0.294

$0.237

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Rochester

USA . 4,725 parts In-Stock

1+ parts

$0.340

100+ parts

$0.330

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$0.330

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4,725

$0.340

$0.330

$0.330

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DigiKey

USA . 12,000 parts In-Stock

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$0.350

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$0.350

Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 62 parts In-Stock

1+ parts

$0.218

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62

$0.218

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Digiode

USA . 1,701 parts In-Stock

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$0.279

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1,701

$0.279

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Flip Electronics

USA . 12,000 parts In-Stock

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Vyrian

USA . 8,867 parts In-Stock

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8,867

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Chip Stock

USA . 155 parts In-Stock

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155

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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Inventory MP

USA . 15 parts In-Stock

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15

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Bristol Electronics

USA . 15 parts In-Stock

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15

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Distributors (Availability)

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Corohmni

South Africa . 229 parts In-Stock

1+ parts

$0.210

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229

$0.210

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Argo Parts USA

USA . 3,337 parts In-Stock

1+ parts

$0.218

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$0.212

3,337

$0.218

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$0.212

Continental Prestige Electronics

USA . 2,302 parts In-Stock

1+ parts

$0.218

100+ parts

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$0.214

2,302

$0.218

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$0.214

Ampacity Inc.

Singapore . 9,210 parts In-Stock

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$0.250

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9,210

$0.250

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Corphita

USA . 1,372 parts In-Stock

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$0.265

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1,372

$0.265

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Andel Nordic

Denmark . 3,318 parts In-Stock

1+ parts

$2.713

100+ parts

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$2.605

10k+ parts

$2.605

3,318

$2.713

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$2.605

$2.605

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,761 parts In-Stock

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20,761

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 8,219 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,319 parts In-Stock

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Kulean Microsystems

USA . 7,103 parts In-Stock

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SupplyDigital Components

Austria . 6,081 parts In-Stock

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Perfect Parts

USA . 3,289 parts In-Stock

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TANS Electronics

Latvia . 2,180 parts In-Stock

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Supply Digital

USA . 1,771 parts In-Stock

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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948

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Netroflash

USA . 500 parts In-Stock

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$0.214

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$0.207

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$0.203

500

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$0.214

$0.207

$0.203

Cyclops Electronics Ltd (Excess)

UK . 100 parts In-Stock

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100

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Glotronic Ltd.

UK . 80 parts In-Stock

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80

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Overview

Unleash the power of innovation with the MJE2955TTU from Onsemi. Crafted with precision and expertise, this Power BJT transistor offers unparalleled performance and reliability in a range of applications. Whether you're looking to optimize switching operations or enhance overall efficiency, this PNP transistor is your go-to solution. With a maximum power dissipation of 75W and a maximum collector current of 10A, the MJE2955TTU is designed to meet your high-power requirements with ease. Trust Onsemi's legacy of excellence and choose the MJE2955TTU for your next project. Elevate your performance and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and provides flexibility in design.

Configuration: SINGLE

The single configuration simplifies the circuit layout and makes it easier to control in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times and efficient operation.

Package Shape: RECTANGULAR

The rectangular shape saves space and allows for easy mounting in tight spaces or on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminals enable secure connections and ease of soldering during installation.

No. of Terminals: 3

With three terminals, this transistor offers versatile connectivity options for different circuit configurations.

Maximum Power Dissipation (Abs): 75 W

With a high power dissipation capability, this transistor can handle high loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and easy installation in various setups.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures consistent performance and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150°C, this transistor can withstand high heat environments.

Maximum Collector-Emitter Voltage: 60 V

The 60V maximum voltage rating allows for safe operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Using silicon as the transistor element material ensures high performance, stability, and reliability.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor can handle high power applications with ease.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides corrosion resistance and ensures a stable electrical connection over time.

Terminal Position: SINGLE

The single terminal position simplifies installation and makes it easy to connect in circuits.

Nominal Transition Frequency (fT): 2 MHz

The 2MHz nominal transition frequency allows for efficient switching and amplification in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE2955TTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE2955TTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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