Loading...

MJ15016G

Onsemi

MJ15016G by Onsemi

The Onsemi MJ15016G is a PNP BJT transistor with max. collector-emitter voltage of 120V, max. collector current of 15A, and max. power dissipation of 180W. It is commonly used for switching applications due to its single configuration and high transition frequency of 2.2MHz.

Median Price

$4.731

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 88 parts In-Stock

1+ parts

$5.020

100+ parts

$3.690

1k+ parts

-

10k+ parts

-

88

$5.020

$3.690

-

-

Chip1Stop

Japan . 90 parts In-Stock

1+ parts

$6.660

100+ parts

$3.880

1k+ parts

$3.470

10k+ parts

$3.050

90

$6.660

$3.880

$3.470

$3.050

Mouser Electronics

USA . 38 parts In-Stock

1+ parts

$6.680

100+ parts

-

1k+ parts

-

10k+ parts

-

38

$6.680

-

-

-

Element14

Singapore . 126 parts In-Stock

1+ parts

$9.670

100+ parts

$5.670

1k+ parts

$5.450

10k+ parts

-

126

$9.670

$5.670

$5.450

-

DigiKey

USA . 1,134 parts In-Stock

1+ parts

-

100+ parts

$4.430

1k+ parts

-

10k+ parts

-

1,134

-

$4.430

-

-

Rochester

USA . 1,034 parts In-Stock

1+ parts

-

100+ parts

$3.360

1k+ parts

$3.010

10k+ parts

$2.830

1,034

-

$3.360

$3.010

$2.830

Master Electronics

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$3.540

1k+ parts

$3.270

10k+ parts

$3.170

300

-

$3.540

$3.270

$3.170

Verical

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$4.442

1k+ parts

$4.182

10k+ parts

-

300

-

$4.442

$4.182

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 83 parts In-Stock

1+ parts

$3.553

100+ parts

-

1k+ parts

-

10k+ parts

-

83

$3.553

-

-

-

Nova Conductors

Japan . 68 parts In-Stock

1+ parts

$4.130

100+ parts

-

1k+ parts

-

10k+ parts

-

68

$4.130

-

-

-

Chip Stock

USA . 62,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

62,000

-

-

-

-

Flip Electronics

USA . 3,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,200

-

-

-

-

IBS Electronics

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$4.965

1k+ parts

$4.586

10k+ parts

$4.446

300

-

$4.965

$4.586

$4.446

ACDS - Activité Composants Distribution Service

France . 43 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43

-

-

-

-

Holdelec - ElecDif-Pro

France . 43 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43

-

-

-

-

Huijzer Components

Netherlands . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Vyrian

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 19,672 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

10k+ parts

-

19,672

$0.314

-

-

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.433

100+ parts

$0.411

1k+ parts

$0.411

10k+ parts

-

40

$0.433

$0.411

$0.411

-

Semicontronic

India . 362 parts In-Stock

1+ parts

$3.010

100+ parts

$2.935

1k+ parts

$2.920

10k+ parts

-

362

$3.010

$2.935

$2.920

-

Corphita

USA . 1,768 parts In-Stock

1+ parts

$3.366

100+ parts

-

1k+ parts

-

10k+ parts

-

1,768

$3.366

-

-

-

Corohmni

South Africa . 91 parts In-Stock

1+ parts

$3.540

100+ parts

-

1k+ parts

-

10k+ parts

-

91

$3.540

-

-

-

Component Stockers USA

USA . 3,550 parts In-Stock

1+ parts

$3.870

100+ parts

$3.630

1k+ parts

$3.290

10k+ parts

-

3,550

$3.870

$3.630

$3.290

-

Argo Parts USA

USA . 740 parts In-Stock

1+ parts

$4.130

100+ parts

-

1k+ parts

-

10k+ parts

-

740

$4.130

-

-

-

Continental Prestige Electronics

USA . 229 parts In-Stock

1+ parts

$5.840

100+ parts

$3.810

1k+ parts

-

10k+ parts

-

229

$5.840

$3.810

-

-

Ampacity Inc.

Singapore . 295 parts In-Stock

1+ parts

$6.550

100+ parts

-

1k+ parts

-

10k+ parts

-

295

$6.550

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 20,568 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,568

-

-

-

-

SupplyDigital Components

Austria . 6,254 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,254

-

-

-

-

A-Z Elektronik GmbH

Germany . 6,180 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,180

-

-

-

-

Kulean Microsystems

USA . 4,346 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,346

-

-

-

-

Lixinc

USA . 3,222 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,222

-

-

-

-

TANS Electronics

Latvia . 2,681 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,681

-

-

-

-

Perfect Parts

USA . 2,513 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,513

-

-

-

-

Problanco Electronics

Mexico . 934 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

934

-

-

-

-

UHIMA Technologies

Türkiye . 401 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

401

-

-

-

-

Authorized Procurement Solutions

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

200

-

-

-

-

Bastille Electronics

Australia . 65 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

65

-

-

-

-

Overview

Enhance your power applications with the MJ15016G by Onsemi, a top-quality Power BJT transistor that guarantees reliability and performance. With a single configuration and PNP polarity, this transistor is perfect for switching operations, offering a maximum power dissipation of 180W and a collector current of 15A. Whether you're designing industrial machinery or automotive systems, the MJ15016G provides the value, efficiency, and durability you need to elevate your projects to the next level. Trust Onsemi's expertise in semiconductor manufacturing and choose the MJ15016G for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent heat dissipation, allowing the transistor to handle high power dissipation effectively.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching circuits and can provide high current gain, making them suitable for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in various electronic systems.

Maximum Power Dissipation (Abs): 180 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, ensuring reliable performance in demanding applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures without compromising its functionality.

Maximum Collector-Emitter Voltage: 120 V

The high collector-emitter voltage rating allows the transistor to be used in applications that require a higher voltage handling capability.

Maximum Collector Current (IC): 15 A

The high collector current rating enables the transistor to handle significant levels of current, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 2.2 MHz

The high transition frequency ensures fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ15016G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ15016G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-579-5547, 5961015795547

NIIN

015795547

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20