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MJ15024G

Onsemi

MJ15024G by Onsemi

The Onsemi MJ15024G is a NPN BJT with 250V VCEO, 16A IC, and 250W Ptot. Ideal for amplifier applications due to its high power dissipation capability. Features a single configuration in a round package with flange mount style.

Median Price

$8.300

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

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Distrelec

Netherlands . 118 parts In-Stock

1+ parts

$7.951

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$5.849

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$5.250

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118

$7.951

$5.849

$5.250

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Chip1Stop

Japan . 100 parts In-Stock

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$8.300

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$8.300

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Newark

USA . 502 parts In-Stock

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$8.840

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$4.740

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502

$8.840

$4.740

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Farnell

UK . 53 parts In-Stock

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$8.842

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$5.471

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$5.368

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53

$8.842

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$5.368

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Mouser Electronics

USA . 1,181 parts In-Stock

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$8.920

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DigiKey

USA . 119 parts In-Stock

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$9.480

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$4.826

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$4.292

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119

$9.480

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Avnet

USA . 1,000 parts In-Stock

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Verical

USA . 840 parts In-Stock

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$5.600

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$4.929

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840

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$5.600

$4.929

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Master Electronics

USA . 840 parts In-Stock

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-

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$4.760

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$4.180

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$4.160

840

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$4.760

$4.180

$4.160

RS (Exports)

UK . 400 parts In-Stock

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$5.782

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$5.430

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400

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$5.782

$5.430

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$5.340

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$5.340

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Digiode

USA . 1,676 parts In-Stock

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$6.584

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TME

Poland . 82 parts In-Stock

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$7.280

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$5.280

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82

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$5.280

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Maritex

Poland . 18 parts In-Stock

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$7.715

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$4.114

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18

$7.715

$4.114

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SOS electronic

Slovakia . 3 parts In-Stock

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$14.051

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$12.853

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3

$14.051

$12.853

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Component Electronics Inc.

Canada . 5 parts In-Stock

1+ parts

$15.380

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$11.540

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$10.000

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5

$15.380

$11.540

$10.000

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Flip Electronics

USA . 14,300 parts In-Stock

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Chip Stock

USA . 6,894 parts In-Stock

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Vyrian

USA . 2,794 parts In-Stock

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IBS Electronics

USA . 965 parts In-Stock

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$5.961

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$5.876

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965

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$5.961

$5.876

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NAC Semi

USA . 900 parts In-Stock

1+ parts

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$8.500

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$7.730

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900

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$8.500

$7.730

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Cyclops Electronics Ltd

UK . 618 parts In-Stock

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Micros

Poland . 64 parts In-Stock

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$5.125

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64

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Partservice

France . 64 parts In-Stock

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$4.968

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$4.968

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$4.968

64

-

$4.968

$4.968

$4.968

Micros sp.j. W. Kędra i J. Lic

Poland . 63 parts In-Stock

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$5.321

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$5.321

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$5.321

63

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$5.321

$5.321

ComSIT Distribution GmbH

Germany . 33 parts In-Stock

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Huijzer Components

Netherlands . 31 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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Amar Radio Corporation

India . 2 parts In-Stock

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2

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Benley Electronics

USA . 6 parts In-Stock

1+ parts

$0.750

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6

$0.750

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Aztec Data Supply Inc.

USA . 4,644 parts In-Stock

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$1.882

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4,644

$1.882

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Ampacity Inc.

Singapore . 2,718 parts In-Stock

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$3.640

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2,718

$3.640

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Semicontronic

India . 2 parts In-Stock

1+ parts

$3.640

100+ parts

$3.549

1k+ parts

$3.531

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2

$3.640

$3.549

$3.531

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Corohmni

South Africa . 121 parts In-Stock

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$4.280

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121

$4.280

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Modulus Dynamics

Lithuania . 18,668 parts In-Stock

1+ parts

$4.681

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$4.681

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$4.681

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18,668

$4.681

$4.681

$4.681

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$5.233

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$5.024

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50

$5.233

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$5.024

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Continental Prestige Electronics

USA . 893 parts In-Stock

1+ parts

$5.340

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$5.233

893

$5.340

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$5.233

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$5.464

100+ parts

$5.027

1k+ parts

$4.710

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200

$5.464

$5.027

$4.710

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Corphita

USA . 2,009 parts In-Stock

1+ parts

$6.237

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2,009

$6.237

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Component Stockers USA

USA . 3,245 parts In-Stock

1+ parts

$7.730

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$5.780

1k+ parts

$12.480

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3,245

$7.730

$5.780

$12.480

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iodParts Technologies Inc.

India . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,805 parts In-Stock

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Perfect Parts

USA . 11,756 parts In-Stock

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Kulean Microsystems

USA . 6,625 parts In-Stock

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6,625

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RC Electronics

USA . 6,115 parts In-Stock

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$11.800

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$11.390

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$11.000

6,115

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$11.800

$11.390

$11.000

Kepictronics

USA . 3,900 parts In-Stock

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Problanco Electronics

Mexico . 3,451 parts In-Stock

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Microchip USA

USA . 3,341 parts In-Stock

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Argo Parts USA

USA . 2,674 parts In-Stock

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2,674

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TANS Electronics

Latvia . 2,546 parts In-Stock

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2,546

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SupplyDigital Components

Austria . 2,278 parts In-Stock

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2,278

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Lixinc

USA . 1,769 parts In-Stock

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1,769

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UHIMA Technologies

Türkiye . 342 parts In-Stock

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Metaverse IC Inc.

Canada . 150 parts In-Stock

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Authorized Procurement Solutions

USA . 85 parts In-Stock

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85

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Overview

Unleash the power of innovation with the Onsemi MJ15024G Power BJT! Manufactured by industry leader Onsemi, this NPN transistor offers unparalleled quality and reliability for a wide range of amplifier applications. With a maximum power dissipation of 250W and a collector-emitter voltage of 250V, this transistor delivers exceptional performance in a compact and durable package. Trust Onsemi to provide you with cutting-edge technology that will take your projects to the next level. Upgrade to the MJ15024G today and experience the difference for yourself!

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent heat dissipation, ensuring the transistor operates at a stable temperature even under high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product suitable for various amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into amplifier circuits.

Maximum Power Dissipation: 250 W

With a high maximum power dissipation, this transistor can handle high power applications with ease.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage allows for the transistor to be used in circuits that require high voltage operation.

Maximum Collector Current: 16 A

The high maximum collector current enables the transistor to handle high current loads, making it suitable for power amplifier applications.

Nominal Transition Frequency: 4 MHz

The high nominal transition frequency allows for high-frequency operation in amplifier circuits, making this transistor suitable for audio or radio frequency amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ15024G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ15024G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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