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MJ15004G

Onsemi

MJ15004G by Onsemi

The Onsemi MJ15004G is a PNP BJT transistor with 140V VCE, 20A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 25. With a max operating temperature of 200°C, it offers reliable performance in various electronic systems.

Median Price

$6.235

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 235 parts In-Stock

1+ parts

$3.818

100+ parts

$5.296

1k+ parts

$4.666

10k+ parts

-

235

$3.818

$5.296

$4.666

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Chip1Stop

Japan . 100 parts In-Stock

1+ parts

$6.110

100+ parts

$4.030

1k+ parts

$3.650

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-

100

$6.110

$4.030

$3.650

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Farnell

UK . 364 parts In-Stock

1+ parts

$6.360

100+ parts

$3.280

1k+ parts

$3.210

10k+ parts

-

364

$6.360

$3.280

$3.210

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Newark

USA . 245 parts In-Stock

1+ parts

$8.260

100+ parts

$4.430

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-

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245

$8.260

$4.430

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Mouser Electronics

USA . 831 parts In-Stock

1+ parts

$8.490

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-

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831

$8.490

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DigiKey

USA . 1,026 parts In-Stock

1+ parts

$8.560

100+ parts

$4.302

1k+ parts

$3.747

10k+ parts

-

1,026

$8.560

$4.302

$3.747

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Element14

Singapore . 364 parts In-Stock

1+ parts

$10.020

100+ parts

$5.310

1k+ parts

$5.280

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364

$10.020

$5.310

$5.280

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Flip Electronics (Authorized)

USA . 800 parts In-Stock

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-

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800

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Verical

USA . 685 parts In-Stock

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-

100+ parts

$4.988

1k+ parts

$4.306

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685

-

$4.988

$4.306

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Master Electronics

USA . 685 parts In-Stock

1+ parts

-

100+ parts

$4.240

1k+ parts

$3.650

10k+ parts

$3.630

685

-

$4.240

$3.650

$3.630

Arrow

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$3.880

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-

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600

-

$3.880

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,477 parts In-Stock

1+ parts

$3.627

100+ parts

-

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-

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2,477

$3.627

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-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$5.173

100+ parts

-

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500

$5.173

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-

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TME

Poland . 90 parts In-Stock

1+ parts

$7.870

100+ parts

$5.560

1k+ parts

-

10k+ parts

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90

$7.870

$5.560

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SOS electronic

Slovakia . 3 parts In-Stock

1+ parts

$9.166

100+ parts

$8.202

1k+ parts

-

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3

$9.166

$8.202

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Chip Stock

USA . 57,000 parts In-Stock

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57,000

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ComSIT Distribution GmbH

Germany . 2,025 parts In-Stock

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2,025

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Bristol Electronics

USA . 1,100 parts In-Stock

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1,100

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-

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IBS Electronics

USA . 435 parts In-Stock

1+ parts

-

100+ parts

$7.742

1k+ parts

$4.909

10k+ parts

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435

-

$7.742

$4.909

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

1+ parts

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300

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Flip Electronics

USA . 249 parts In-Stock

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249

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Vyrian

USA . 198 parts In-Stock

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198

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NAC Semi

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$10.920

1k+ parts

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100

-

$10.920

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Huijzer Components

Netherlands . 30 parts In-Stock

1+ parts

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30

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LittleDiode

UK . 18 parts In-Stock

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18

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 606 parts In-Stock

1+ parts

$0.816

100+ parts

-

1k+ parts

-

10k+ parts

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606

$0.816

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Semicontronic

India . 973 parts In-Stock

1+ parts

$2.940

100+ parts

$2.866

1k+ parts

$2.852

10k+ parts

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973

$2.940

$2.866

$2.852

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Ampacity Inc.

Singapore . 597 parts In-Stock

1+ parts

$2.940

100+ parts

-

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-

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597

$2.940

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Corphita

USA . 885 parts In-Stock

1+ parts

$3.436

100+ parts

-

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885

$3.436

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Corohmni

South Africa . 264 parts In-Stock

1+ parts

$3.710

100+ parts

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264

$3.710

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$5.173

100+ parts

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2,000

$5.173

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Continental Prestige Electronics

USA . 1,547 parts In-Stock

1+ parts

$6.840

100+ parts

$4.460

1k+ parts

-

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1,547

$6.840

$4.460

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Perfect Parts

USA . 130,048 parts In-Stock

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130,048

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Authorized Procurement Solutions

USA . 19,952 parts In-Stock

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19,952

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Lixinc

USA . 18,194 parts In-Stock

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18,194

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GreenTree Electronics

Israel . 17,077 parts In-Stock

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17,077

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QUARKTWIN TECHNOLOGY LTD

USA . 14,869 parts In-Stock

1+ parts

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14,869

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A-Z Elektronik GmbH

Germany . 6,344 parts In-Stock

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6,344

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Problanco Electronics

Mexico . 6,098 parts In-Stock

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6,098

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Cyclops Electronics Ltd (Excess)

UK . 2,700 parts In-Stock

1+ parts

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2,700

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Kulean Microsystems

USA . 2,137 parts In-Stock

1+ parts

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2,137

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TANS Electronics

Latvia . 1,658 parts In-Stock

1+ parts

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1,658

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Argo Parts USA

USA . 1,590 parts In-Stock

1+ parts

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1,590

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Glotronic Ltd.

UK . 640 parts In-Stock

1+ parts

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640

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UHIMA Technologies

Türkiye . 570 parts In-Stock

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570

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Futuretech Components

Singapore . 391 parts In-Stock

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391

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SupplyDigital Components

Austria . 226 parts In-Stock

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226

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iodParts Technologies Inc.

India . 70 parts In-Stock

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70

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Overview

Enhance your electronic projects with the MJ15004G Power BJT by Onsemi. Manufactured with precision and quality, this PNP transistor offers a single configuration for amplifier applications. With a maximum power dissipation of 250W and a collector-emitter voltage of 140V, this product is built to deliver reliable performance in various industrial and consumer applications. Trust Onsemi's expertise in semiconductor technology to provide you with a high-quality component that guarantees efficiency and durability. Upgrade your designs with the MJ15004G and experience superior functionality and value like never before.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body provides durability and efficient heat dissipation, making this transistor suitable for high-power applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits, making this transistor a versatile choice for various amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making this transistor easy to implement in amplifier projects.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor offers high performance and reliability in amplifying signals.

Package Shape: ROUND

The round package shape allows for easy mounting and provides a compact design, making this transistor suitable for space-constrained applications.

Terminal Form: PIN/PEG

The pin/peg terminal form ensures secure connections and easy soldering, making installation hassle-free for users.

No. of Terminals: 2

With only two terminals, this transistor is easy to handle and reduces the chances of incorrect connections, ensuring reliable performance.

Maximum Power Dissipation: 250 W

The high maximum power dissipation of 250W allows for robust performance in demanding amplifier applications.

Package Style: FLANGE MOUNT

The flange mount package style offers secure mounting options, enhancing the stability and reliability of the transistor in operation.

Minimum DC Current Gain: 25

A minimum DC current gain of 25 ensures consistent and reliable amplification of signals in various applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperatures, making it suitable for industrial environments.

Maximum Collector-Emitter Voltage: 140 V

The high maximum collector-emitter voltage of 140V allows for safe operation in high-voltage conditions.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high efficiency and performance in amplifying signals.

Maximum Collector Current: 20 A

The high maximum collector current of 20A allows for handling high currents in amplifier circuits, making this transistor ideal for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and reliable soldering connections, ensuring long-term performance.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and improves heat dissipation, enhancing the overall performance of the transistor.

Case Connection: COLLECTOR

The collector case connection improves thermal management and ensures efficient heat dissipation, prolonging the lifespan of the transistor.

Nominal Transition Frequency: 2 MHz

With a nominal transition frequency of 2MHz, this transistor offers high-speed performance in amplifying signals with minimal distortion.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ15004G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ15004G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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