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BUL58D

STMicroelectronics

BUL58D by STMicroelectronics

BUL58D by STMicroelectronics is a NPN Power BJT with 450V VCE, 8A IC, and 75W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. Package style is flange mount with through-hole terminals.

Median Price

$1.534

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,965 parts In-Stock

1+ parts

$1.970

100+ parts

$0.843

1k+ parts

$0.611

10k+ parts

$0.480

1,965

$1.970

$0.843

$0.611

$0.480

EBV Elektronik

Germany . 7,100 parts In-Stock

1+ parts

-

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-

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7,100

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Avnet

USA . 1,850 parts In-Stock

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-

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1,850

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RS (Exports)

UK . 15 parts In-Stock

1+ parts

-

100+ parts

$1.099

1k+ parts

$0.730

10k+ parts

-

15

-

$1.099

$0.730

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 23 parts In-Stock

1+ parts

$0.639

100+ parts

-

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23

$0.639

-

-

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Digiode

USA . 4,837 parts In-Stock

1+ parts

$1.539

100+ parts

-

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-

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4,837

$1.539

-

-

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TME

Poland . 129 parts In-Stock

1+ parts

$1.740

100+ parts

$0.800

1k+ parts

$0.770

10k+ parts

-

129

$1.740

$0.800

$0.770

-

Chip Stock

USA . 23,500 parts In-Stock

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-

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23,500

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LIBRA Elektronik GmbH

Germany . 10,000 parts In-Stock

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10,000

-

-

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Vyrian

USA . 7,476 parts In-Stock

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7,476

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VNN

France . 4,176 parts In-Stock

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4,176

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Anansix

USA . 2,196 parts In-Stock

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2,196

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Corel Iberica Componentes, S.L.

Spain . 1,000 parts In-Stock

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1,000

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Rebound Electronics

UK . 991 parts In-Stock

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991

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Rutronik

Germany . 950 parts In-Stock

1+ parts

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100+ parts

$0.805

1k+ parts

$0.636

10k+ parts

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950

-

$0.805

$0.636

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Goldney Electronics S.L.

Spain . 444 parts In-Stock

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444

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Infinite Electronics LLP

India . 300 parts In-Stock

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300

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LittleDiode

UK . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,087 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

-

10k+ parts

-

2,087

$0.510

-

-

-

Semicontronic

India . 1,968 parts In-Stock

1+ parts

$0.510

100+ parts

$0.497

1k+ parts

$0.495

10k+ parts

-

1,968

$0.510

$0.497

$0.495

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Corohmni

South Africa . 221 parts In-Stock

1+ parts

$0.624

100+ parts

-

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221

$0.624

-

-

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Continental Prestige Electronics

USA . 5,033 parts In-Stock

1+ parts

$0.625

100+ parts

-

1k+ parts

-

10k+ parts

$0.612

5,033

$0.625

-

-

$0.612

Argo Parts USA

USA . 311 parts In-Stock

1+ parts

$0.625

100+ parts

-

1k+ parts

-

10k+ parts

$0.606

311

$0.625

-

-

$0.606

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.639

100+ parts

-

1k+ parts

$0.607

10k+ parts

$0.594

50

$0.639

-

$0.607

$0.594

Modulus Dynamics

Lithuania . 21 parts In-Stock

1+ parts

$0.694

100+ parts

$0.687

1k+ parts

$0.666

10k+ parts

-

21

$0.694

$0.687

$0.666

-

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.762

100+ parts

$0.701

1k+ parts

$0.657

10k+ parts

-

450

$0.762

$0.701

$0.657

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Corphita

USA . 4,443 parts In-Stock

1+ parts

$1.458

100+ parts

-

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4,443

$1.458

-

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IDEA Electronic Components Group

UK . 755 parts In-Stock

1+ parts

$1.662

100+ parts

-

1k+ parts

$1.495

10k+ parts

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755

$1.662

-

$1.495

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Aztec Data Supply Inc.

USA . 167 parts In-Stock

1+ parts

$1.820

100+ parts

-

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167

$1.820

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MKK Technologies

India . 1,950 parts In-Stock

1+ parts

$3.124

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1,950

$3.124

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DigiPath Technology Company

USA . 1,950 parts In-Stock

1+ parts

$3.124

100+ parts

-

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-

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1,950

$3.124

-

-

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Microchip USA

USA . 4,381 parts In-Stock

1+ parts

$9.360

100+ parts

-

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4,381

$9.360

-

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Authorized Procurement Solutions

USA . 90,000 parts In-Stock

1+ parts

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90,000

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Perfect Parts

USA . 20,760 parts In-Stock

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20,760

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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A-Z Elektronik GmbH

Germany . 6,167 parts In-Stock

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6,167

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Alle Elektronik GmbH

Germany . 4,111 parts In-Stock

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4,111

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Lixinc

USA . 2,036 parts In-Stock

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2,036

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GreenTree Electronics

Israel . 1,900 parts In-Stock

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1,900

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-

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Robosynatics

Brazil . 1,496 parts In-Stock

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1,496

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-

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Lucentia Tech

USA . 1,496 parts In-Stock

1+ parts

-

100+ parts

$0.435

1k+ parts

$0.435

10k+ parts

$0.435

1,496

-

$0.435

$0.435

$0.435

iodParts Technologies Inc.

India . 1,133 parts In-Stock

1+ parts

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1,133

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Assy Fe

Spain . 1,075 parts In-Stock

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1,075

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Parana Technologies

USA . 983 parts In-Stock

1+ parts

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100+ parts

$1.987

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983

-

$1.987

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Allen Electronics Distributors

USA . 15 parts In-Stock

1+ parts

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100+ parts

$136.880

1k+ parts

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15

-

$136.880

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Overview

Discover the BUL58D by STMicroelectronics, a high-quality Power Bipolar Junction Transistor with NPN polarity and a maximum VCEsat of 2V. This transistor features a built-in diode, making it perfect for switching applications. With a maximum collector-emitter voltage of 450V and a maximum power dissipation of 85W, this product offers exceptional performance and reliability. Whether you're designing industrial equipment or consumer electronics, the BUL58D provides the value and benefits you need to bring your project to life. Experience the advantages of STMicroelectronics' advanced technology and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy is a lightweight and durable material, making the transistor easy to handle and suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the efficiency and performance of the transistor in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring fast and efficient on/off transitions.

Maximum VCEsat: 2 V

Low VCEsat minimizes power loss and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board.

Maximum Power Dissipation (Abs): 75 W

High power dissipation capability allows for handling heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides mechanical stability and easy installation in electronic systems.

Maximum Power Dissipation Ambient: 85 W

The transistor can handle high ambient temperatures without compromising performance.

Minimum DC Current Gain (hFE): 5

A minimum hFE of 5 ensures reliable amplification and switching characteristics.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function in various environmental conditions.

Maximum Collector-Emitter Voltage: 450 V

High VCE voltage rating makes the transistor suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon offers good electrical properties and reliability, enhancing the performance of the transistor.

Maximum Collector Current (IC): 8 A

High collector current rating allows for handling large currents in switching applications.

Maximum Turn Off Time (toff): 1980 ns

Fast turn-off time ensures quick switching and improved efficiency in high-speed applications.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides corrosion resistance and excellent solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL58D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

450 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

85 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1980 ns

Maximum VCEsat:

2 V

Trade Compliance

BUL58D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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