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MJD44H11T4G

Onsemi

MJD44H11T4G by Onsemi

MJD44H11T4G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 min and operates up to 150°C. Its small outline package makes it suitable for surface mount designs.

Median Price

$0.709

Lifecycle Status

Suppliers In-Stock

40

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 57,280 parts In-Stock

1+ parts

$1.150

100+ parts

$0.471

1k+ parts

$0.330

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57,280

$1.150

$0.471

$0.330

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Mouser Electronics

USA . 26,114 parts In-Stock

1+ parts

$1.150

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$0.472

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$0.365

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26,114

$1.150

$0.472

$0.365

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Newark

USA . 930 parts In-Stock

1+ parts

$1.240

100+ parts

$0.558

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$0.450

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930

$1.240

$0.558

$0.450

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Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$1.622

100+ parts

$1.541

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$1.541

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500

$1.622

$1.541

$1.541

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EBV Elektronik

Germany . 382,500 parts In-Stock

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Future Electronics

Canada . 192,500 parts In-Stock

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Avnet

USA . 37,500 parts In-Stock

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$0.221

37,500

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Verical

USA . 36,900 parts In-Stock

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100+ parts

$0.642

1k+ parts

$0.449

10k+ parts

$0.376

36,900

-

$0.642

$0.449

$0.376

Master Electronics

USA . 36,900 parts In-Stock

1+ parts

-

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$0.546

1k+ parts

$0.381

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$0.320

36,900

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$0.381

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Arrow

USA . 25,000 parts In-Stock

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$0.271

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Farnell

UK . 8,160 parts In-Stock

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$2.990

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Element14

Singapore . 4,339 parts In-Stock

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$0.776

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$0.544

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Chip1Stop

Japan . 1,995 parts In-Stock

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$0.537

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$0.305

1,995

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 491 parts In-Stock

1+ parts

$0.332

100+ parts

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491

$0.332

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Maritex

Poland . 323 parts In-Stock

1+ parts

$0.869

100+ parts

$0.390

1k+ parts

$0.267

10k+ parts

$0.254

323

$0.869

$0.390

$0.267

$0.254

TME

Poland . 874 parts In-Stock

1+ parts

$0.990

100+ parts

$0.441

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$0.302

10k+ parts

$0.287

874

$0.990

$0.441

$0.302

$0.287

Nova Conductors

Japan . 15 parts In-Stock

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$1.000

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Ozdisan Elektronik

Türkiye . 1,425 parts In-Stock

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$66.091

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IBS Electronics

USA . 2,854,900 parts In-Stock

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$0.643

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$0.388

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$0.319

NAC Semi

USA . 2,092,500 parts In-Stock

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Flip Electronics

USA . 215,000 parts In-Stock

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Chip Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 69,500 parts In-Stock

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Electro Sonic

Canada . 50,000 parts In-Stock

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Sternenhof Electronics

Switzerland . 10,000 parts In-Stock

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Bristol Electronics

USA . 9,822 parts In-Stock

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Atlantic Semiconductor

USA . 9,705 parts In-Stock

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NexGen Digital

USA . 3,171 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,150 parts In-Stock

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ComSIT USA

USA . 3,150 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,552 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,390 parts In-Stock

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Holdelec - ElecDif-Pro

France . 2,390 parts In-Stock

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Sensible Micro Corp

USA . 1,212 parts In-Stock

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SPM Sales

USA . 387 parts In-Stock

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Flex Direct, LLC

USA . 150 parts In-Stock

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Inventory MP

USA . 15 parts In-Stock

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Prism Electronics

USA . 12 parts In-Stock

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R&J Components

USA . 4 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 123,150 parts In-Stock

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$0.183

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$0.183

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Semicontronic

India . 59,493 parts In-Stock

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$0.190

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$0.185

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$0.184

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$0.184

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Corohmni

South Africa . 262 parts In-Stock

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$0.218

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Modulus Dynamics

Lithuania . 6,712 parts In-Stock

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$0.308

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$0.308

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$0.308

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Corphita

USA . 134 parts In-Stock

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$0.314

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Continental Prestige Electronics

USA . 5,467 parts In-Stock

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$0.340

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$0.333

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$0.340

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Argo Parts USA

USA . 4,052 parts In-Stock

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$0.340

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$0.330

4,052

$0.340

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Aztec Data Supply Inc.

USA . 3,181 parts In-Stock

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$0.896

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$0.896

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Aranea Global

USA . 1,000 parts In-Stock

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$0.980

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$0.941

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$0.980

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$0.941

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.622

100+ parts

$1.541

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$1.541

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500

$1.622

$1.541

$1.541

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Perfect Parts

USA . 911,034 parts In-Stock

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Authorized Procurement Solutions

USA . 507,500 parts In-Stock

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Futuretech Components

Singapore . 90,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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GreenTree Electronics

Israel . 75,001 parts In-Stock

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Eastek

USA . 52,500 parts In-Stock

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RC Electronics

USA . 50,836 parts In-Stock

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$0.350

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$0.320

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$0.310

50,836

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Epart123

USA . 45,000 parts In-Stock

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$0.490

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Infinite Electronics LLP (Excess)

. 33,601 parts In-Stock

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iodParts Technologies Inc.

India . 24,506 parts In-Stock

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$0.469

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24,506

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Kepictronics

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,911 parts In-Stock

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Lixinc

USA . 7,150 parts In-Stock

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Robosynatics

Brazil . 5,663 parts In-Stock

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$1.826

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$1.788

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$1.788

5,663

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$1.826

$1.788

$1.788

Lucentia Tech

USA . 5,663 parts In-Stock

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$1.826

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$1.788

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$1.788

5,663

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$1.788

$1.788

S.R.D Solutions

India . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,730 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,563 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Pacific Micro-Tech

USA . 2,875 parts In-Stock

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TANS Electronics

Latvia . 2,584 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,029 parts In-Stock

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Allen Electronics Distributors

USA . 1,820 parts In-Stock

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$0.276

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Kulean Microsystems

USA . 1,701 parts In-Stock

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UHIMA Technologies

Türkiye . 151 parts In-Stock

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Overview

Discover the powerful performance of the Onsemi MJD44H11T4G, a top-quality Power BJT transistor designed for switching applications. With its NPN configuration and high operating temperature, this transistor offers reliability and efficiency in any project. Whether you're building electronics or industrial machinery, this transistor's small outline package and high collector current make it a versatile choice. Trust in Onsemi's reputation for excellence and unlock the potential of your designs with the MJD44H11T4G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatile functionality.

Configuration: SINGLE

Simplified design with a single transistor configuration, ideal for straightforward circuit layouts.

Transistor Application: SWITCHING

Designed for efficient switching applications, ensuring reliable performance in high-speed operations.

Surface Mount: YES

Facilitates easy and space-saving mounting on a circuit board, enhancing overall assembly efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and orientation within circuit layouts.

No. of Terminals: 2

Simplifies circuit connection with just two terminals, promoting ease of integration.

Maximum Power Dissipation (Abs): 20 W

Can handle high power dissipation levels, making it suitable for demanding applications.

Package Style: SMALL OUTLINE

Compact package style saves space and allows for dense circuit designs with multiple components.

Minimum DC Current Gain (hFE): 40

Provides a minimum amplification factor of 40, ensuring reliable signal amplification.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables consistent performance in diverse environments.

Maximum Collector-Emitter Voltage: 80 V

Capable of handling up to 80 volts, suitable for a wide range of voltage requirements.

Maximum Collector Current (IC): 8 A

High collector current rating enables handling of large currents, ideal for power applications.

Terminal Finish: MATTE TIN

Matte tin finish offers good solderability, ensuring secure terminal connections during assembly.

Nominal Transition Frequency (fT): 85 MHz

High transition frequency allows for fast switching speeds and efficient signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD44H11T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD44H11T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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