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MJD45H11TF

Onsemi

MJD45H11TF by Onsemi

MJD45H11TF by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a hFE of 40, operates up to 150°C, and comes in a small outline package suitable for surface mount technology.

Median Price

$0.454

Lifecycle Status

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1k+

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Arrow

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Rochester

USA . 964 parts In-Stock

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$0.454

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Verical

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Chip1Stop

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Digiode

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Nova Conductors

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Component Electronics Inc.

Canada . 1,950 parts In-Stock

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Chip Stock

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Semicontronic

India . 1,250 parts In-Stock

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$0.117

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Ampacity Inc.

Singapore . 1,146 parts In-Stock

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Corphita

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Corohmni

South Africa . 432 parts In-Stock

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Argo Parts USA

USA . 1,876 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,774 parts In-Stock

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Modulus Dynamics

Lithuania . 25,626 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Cyclops Electronics Ltd (Excess)

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Overview

Enhance your power control applications with the MJD45H11TF by Onsemi. Manufactured by a leader in the industry, this Power Bipolar Junction Transistor offers exceptional quality and reliability. Ideal for switching purposes, this PNP transistor in a small outline package provides a maximum collector-emitter voltage of 80V and a maximum collector current of 8A. With a minimum DC current gain of 40, this transistor ensures efficient power dissipation up to 20W while operating at temperatures up to 150°C. Trust Onsemi for high-performance components that deliver value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and protection for the transistor, making it a reliable choice for long-term use.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with existing PNP circuits, simplifying the design process.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easier troubleshooting and maintenance.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient power handling.

Surface Mount: YES

With surface mount capability, this transistor can easily be integrated onto PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on PCBs and efficient use of space.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical support and secure connections.

No. of Terminals: 2

With only 2 terminals, this transistor offers simple integration and reduces the risk of connection errors.

Maximum Power Dissipation (Abs): 20 W

A high maximum power dissipation of 20 W ensures reliable performance under heavy loads and high temperatures.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and enables compact designs.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures consistent performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures and harsh environments.

Maximum Collector-Emitter Voltage: 80 V

A high maximum collector-emitter voltage of 80 V allows for versatile use in different voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high efficiency and excellent performance.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8 A, this transistor can handle high current loads with ease.

Terminal Finish: TIN

The tin terminal finish ensures reliable connections and prevents corrosion, increasing the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and ensures easy installation.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures secure and reliable solder connections during assembly.

Nominal Transition Frequency (fT): 40 MHz

With a nominal transition frequency of 40 MHz, this transistor offers high-speed performance and excellent switching capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD45H11TF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD45H11TF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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