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MJD45H11T4G

Onsemi

MJD45H11T4G by Onsemi

MJD45H11T4G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 8A. It is commonly used for switching applications due to its high power dissipation of 20W and small outline package style.

Median Price

$0.415

Lifecycle Status

Suppliers In-Stock

48

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bürklin Elektronik

Germany . 2,500 parts In-Stock

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$0.310

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$0.310

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DigiKey

USA . 87,718 parts In-Stock

1+ parts

$1.220

100+ parts

$0.501

1k+ parts

$0.352

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87,718

$1.220

$0.501

$0.352

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Mouser Electronics

USA . 11,901 parts In-Stock

1+ parts

$1.220

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$0.502

1k+ parts

$0.389

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11,901

$1.220

$0.502

$0.389

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Newark

USA . 1,629 parts In-Stock

1+ parts

$1.310

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$0.578

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$0.459

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1,629

$1.310

$0.578

$0.459

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Adafruit Industries

USA . 350 parts In-Stock

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$1.485

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$1.411

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$1.411

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350

$1.485

$1.411

$1.411

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EBV Elektronik

Germany . 742,500 parts In-Stock

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Future Electronics

Canada . 530,000 parts In-Stock

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Avnet

USA . 27,500 parts In-Stock

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Verical

USA . 11,500 parts In-Stock

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$0.366

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$0.344

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Master Electronics

USA . 11,500 parts In-Stock

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$0.412

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$0.311

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$0.292

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Arrow

USA . 7,500 parts In-Stock

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$0.271

7,500

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Chip1Stop

Japan . 2,500 parts In-Stock

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RS (Exports)

UK . 2,380 parts In-Stock

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2,380

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Farnell

UK . 1,481 parts In-Stock

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$0.415

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$0.293

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Element14

Singapore . 1,481 parts In-Stock

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$0.672

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$0.473

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Distributors (In-Stock)

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Digiode

USA . 1,192 parts In-Stock

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$0.294

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Nova Conductors

Japan . 100 parts In-Stock

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$0.383

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Maritex

Poland . 3,700 parts In-Stock

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$0.591

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$0.345

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$0.321

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$0.286

3,700

$0.591

$0.345

$0.321

$0.286

Component Electronics Inc.

Canada . 80 parts In-Stock

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$0.770

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$0.580

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$0.500

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80

$0.770

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TME

Poland . 2,198 parts In-Stock

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$1.150

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$0.451

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$0.319

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$0.278

2,198

$1.150

$0.451

$0.319

$0.278

Ozdisan Elektronik

Türkiye . 4,846 parts In-Stock

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$64.971

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NAC Semi

USA . 535,000 parts In-Stock

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IBS Electronics

USA . 314,000 parts In-Stock

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Chip Stock

USA . 109,580 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 19,255 parts In-Stock

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Demsay Elektronik

Türkiye . 12,500 parts In-Stock

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Goldney Electronics S.L.

Spain . 6,682 parts In-Stock

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Bristol Electronics

USA . 5,629 parts In-Stock

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K-1 Technologies

USA . 3,261 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,227 parts In-Stock

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Inventory MP

USA . 2,858 parts In-Stock

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Micros

Poland . 2,500 parts In-Stock

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$0.320

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Flip Electronics

USA . 2,500 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,300 parts In-Stock

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Dan-Mar Components

USA . 2,183 parts In-Stock

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ComSIT USA

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Semtec, LLC

USA . 1,980 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,440 parts In-Stock

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Elcom Components

USA . 1,440 parts In-Stock

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Partservice

France . 1,292 parts In-Stock

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$0.310

Micros sp.j. W. Kędra i J. Lic

Poland . 1,280 parts In-Stock

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$0.342

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$0.342

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$0.342

Flex Direct, LLC

USA . 420 parts In-Stock

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QIE Inc.

USA . 236 parts In-Stock

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Microfarads

USA . 99 parts In-Stock

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Connector Distribution Corp

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40

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Right Parts Inc.

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40

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PC Components Company LLC

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Distributors (Availability)

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Semicontronic

India . 46,641 parts In-Stock

1+ parts

$0.188

100+ parts

$0.183

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$0.182

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46,641

$0.188

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$0.182

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Corohmni

South Africa . 341 parts In-Stock

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$0.202

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341

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Corphita

USA . 1,040 parts In-Stock

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$0.279

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Continental Prestige Electronics

USA . 6,469 parts In-Stock

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$0.370

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$0.362

6,469

$0.370

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Argo Parts USA

USA . 3,174 parts In-Stock

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$0.370

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$0.359

3,174

$0.370

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Ampacity Inc.

Singapore . 46,931 parts In-Stock

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$0.426

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$0.426

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$1.485

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$1.411

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$1.411

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350

$1.485

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$1.411

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Aztec Data Supply Inc.

USA . 301 parts In-Stock

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$1.680

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Perfect Parts

USA . 1,721,318 parts In-Stock

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Authorized Procurement Solutions

USA . 435,000 parts In-Stock

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GreenTree Electronics

Israel . 145,000 parts In-Stock

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Futuretech Components

Singapore . 100,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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RC Electronics

USA . 82,831 parts In-Stock

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$0.400

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$0.370

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$0.360

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Kepictronics

USA . 60,000 parts In-Stock

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CPlus Electronics

USA . 47,600 parts In-Stock

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Infinite Electronics LLP (Excess)

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Formix International (Excess)

India . 17,500 parts In-Stock

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Lixinc

USA . 17,117 parts In-Stock

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Assy Fe

Spain . 13,000 parts In-Stock

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iodParts Technologies Inc.

India . 9,798 parts In-Stock

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TANS Electronics

Latvia . 6,363 parts In-Stock

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SupplyDigital Components

Austria . 6,189 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,100 parts In-Stock

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Problanco Electronics

Mexico . 4,288 parts In-Stock

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Computer Components Inc. - USA

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Kulean Microsystems

USA . 3,243 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Allen Electronics Distributors

USA . 2,680 parts In-Stock

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$0.219

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2,680

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Netroflash

USA . 2,000 parts In-Stock

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$0.376

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$0.364

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$0.357

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S.R.D Solutions

India . 2,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,707 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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$0.472

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$0.472

$0.472

$0.472

Lucentia Tech

USA . 900 parts In-Stock

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$0.472

Cyclops Electronics Ltd (Excess)

UK . 705 parts In-Stock

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UHIMA Technologies

Türkiye . 196 parts In-Stock

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ChipstoGo Electronic ltd

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Overview

Discover the MJD45H11T4G by Onsemi, a high-quality power bipolar junction transistor that offers numerous advantages for your switching applications. Manufactured by Onsemi, a trusted industry leader, this product guarantees reliability and durability. With its small outline package and gull wing terminals, it is easy to install and integrate into your designs. Boasting a maximum collector-emitter voltage of 80V and a maximum collector current of 8A, this transistor delivers exceptional performance. Whether you're designing industrial equipment or automotive systems, the MJD45H11T4G is the perfect choice for efficient and effective switching. Upgrade your projects with this innovative solution from Onsemi and experience the value and benefits it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides excellent durability and protection, making this transistor suitable for various environments and applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into PNP circuit configurations, facilitating efficient circuit design and operation.

Configuration: SINGLE

The single configuration simplifies circuit setup and maintenance, making this transistor a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power control and motor control circuits.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on circuit boards, saving valuable space and enabling high-density circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape provides compatibility with standard circuit board layouts and simplifies the transistor's integration into various electronic systems.

Terminal Form: GULL WING

The gull wing terminal form ensures secure and reliable electrical connections, reducing the risk of signal loss or failure in demanding applications.

No. of Elements: 1

This transistor consists of a single element, simplifying circuit design and reducing the overall system complexity.

No. of Terminals: 2

Having only two terminals simplifies the transistor's integration into circuit designs, making it easier to handle and operate.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation of 20 W, this transistor can handle high-power applications, ensuring reliable operation and preventing overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers compact dimensions, allowing for efficient use of circuit board space and enabling miniaturized electronic designs.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides sufficient current amplification, improving the performance and stability of the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures the transistor's reliability and suitability for demanding environments and high-temperature applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80 V allows for the safe operation of circuits with higher voltage requirements, ensuring reliable performance and protection against voltage spikes.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers superior electrical characteristics, high temperature tolerance, and excellent reliability.

Maximum Collector Current (IC): 8 A

With a high maximum collector current capability of 8 A, this transistor can handle high-current applications, providing enhanced power delivery and performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and reliable electrical contacts, enhancing the overall durability and longevity of the transistor.

Terminal Position: SINGLE

With a single terminal position, this transistor can be easily installed and connected within circuit layouts, simplifying system assembly and maintenance.

Moisture Sensitivity Level (MSL): 1

The moisture sensitivity level of 1 indicates that this transistor possesses excellent moisture resistance, making it suitable for various operating conditions and environments.

Case Connection: COLLECTOR

The case connection to the collector simplifies the transistor's integration into circuit designs, providing easy electrical connections and ensuring efficient system performance.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at the peak reflow temperature of 30 seconds ensures a reliable soldering process, minimizing the risk of thermal damage during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for secure and robust soldering connections, ensuring optimal electrical performance and durability.

Nominal Transition Frequency (fT): 90 MHz

With a high nominal transition frequency of 90 MHz, this transistor offers excellent high-frequency performance, making it suitable for fast switching applications and high-speed circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD45H11T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD45H11T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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