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MJD47T4G

Onsemi

MJD47T4G by Onsemi

MJD47T4G by Onsemi is a NPN BJT transistor with 250V VCE, 1A IC, and 15W Ptot. Ideal for switching applications in a small outline package with Gull Wing terminals. Operating up to 150°C, it offers a transition frequency of 10MHz for efficient performance.

Median Price

$0.404

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,486 parts In-Stock

1+ parts

$0.881

100+ parts

$0.400

1k+ parts

$0.259

10k+ parts

$0.248

4,486

$0.881

$0.400

$0.259

$0.248

Newark

USA . 1,655 parts In-Stock

1+ parts

$1.030

100+ parts

$0.430

1k+ parts

$0.299

10k+ parts

-

1,655

$1.030

$0.430

$0.299

-

Mouser Electronics

USA . 1,219 parts In-Stock

1+ parts

$1.160

100+ parts

$0.423

1k+ parts

$0.306

10k+ parts

$0.271

1,219

$1.160

$0.423

$0.306

$0.271

DigiKey

USA . 10,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.257

10,090

-

-

-

$0.257

Chip1Stop

Japan . 4,501 parts In-Stock

1+ parts

-

100+ parts

$0.408

1k+ parts

$0.250

10k+ parts

-

4,501

-

$0.408

$0.250

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Verical

USA . 4,486 parts In-Stock

1+ parts

-

100+ parts

$0.400

1k+ parts

$0.259

10k+ parts

$0.248

4,486

-

$0.400

$0.259

$0.248

Master Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.272

1k+ parts

$0.260

10k+ parts

$0.230

2,500

-

$0.272

$0.260

$0.230

Farnell

UK . 106 parts In-Stock

1+ parts

-

100+ parts

$0.349

1k+ parts

$0.232

10k+ parts

-

106

-

$0.349

$0.232

-

Element14

Singapore . 36 parts In-Stock

1+ parts

-

100+ parts

$0.595

1k+ parts

$0.396

10k+ parts

-

36

-

$0.595

$0.396

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Rochester

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$0.309

1k+ parts

$0.256

10k+ parts

$0.229

10

-

$0.309

$0.256

$0.229

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 149 parts In-Stock

1+ parts

$0.240

100+ parts

-

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-

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149

$0.240

-

-

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.314

100+ parts

-

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300

$0.314

-

-

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Maritex

Poland . 1,204 parts In-Stock

1+ parts

$0.751

100+ parts

$0.405

1k+ parts

$0.318

10k+ parts

-

1,204

$0.751

$0.405

$0.318

-

Component Electronics Inc.

Canada . 12 parts In-Stock

1+ parts

$0.770

100+ parts

$0.580

1k+ parts

$0.500

10k+ parts

-

12

$0.770

$0.580

$0.500

-

Chip Stock

USA . 22,500 parts In-Stock

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22,500

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

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$0.436

5,000

-

-

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$0.436

IBS Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.330

5,000

-

-

-

$0.330

Vyrian

USA . 3,618 parts In-Stock

1+ parts

-

100+ parts

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3,618

-

-

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Flip Electronics

USA . 2,500 parts In-Stock

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2,500

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Inventory MP

USA . 2,351 parts In-Stock

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2,351

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Bristol Electronics

USA . 2,351 parts In-Stock

1+ parts

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2,351

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-

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Pegasus Components GmbH

Germany . 2,200 parts In-Stock

1+ parts

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2,200

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Semi Source

USA . 689 parts In-Stock

1+ parts

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689

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Contempo Components LLC

USA . 171 parts In-Stock

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171

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Sunrise Surplus Inc.

USA . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,768 parts In-Stock

1+ parts

$0.177

100+ parts

-

1k+ parts

-

10k+ parts

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3,768

$0.177

-

-

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Semicontronic

India . 2,841 parts In-Stock

1+ parts

$0.177

100+ parts

$0.173

1k+ parts

$0.172

10k+ parts

-

2,841

$0.177

$0.173

$0.172

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Corohmni

South Africa . 125 parts In-Stock

1+ parts

$0.208

100+ parts

-

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125

$0.208

-

-

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Corphita

USA . 2,307 parts In-Stock

1+ parts

$0.228

100+ parts

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2,307

$0.228

-

-

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Argo Parts USA

USA . 256 parts In-Stock

1+ parts

$0.309

100+ parts

-

1k+ parts

-

10k+ parts

$0.300

256

$0.309

-

-

$0.300

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.314

100+ parts

-

1k+ parts

-

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100

$0.314

-

-

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Continental Prestige Electronics

USA . 1,395 parts In-Stock

1+ parts

$0.667

100+ parts

$0.395

1k+ parts

$0.250

10k+ parts

-

1,395

$0.667

$0.395

$0.250

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Aztec Data Supply Inc.

USA . 3,543 parts In-Stock

1+ parts

$1.816

100+ parts

-

1k+ parts

-

10k+ parts

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3,543

$1.816

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-

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Kepictronics

USA . 20,000 parts In-Stock

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20,000

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Lixinc

USA . 12,711 parts In-Stock

1+ parts

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12,711

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Kulean Microsystems

USA . 7,546 parts In-Stock

1+ parts

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7,546

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Perfect Parts

USA . 7,352 parts In-Stock

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7,352

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SupplyDigital Components

Austria . 7,296 parts In-Stock

1+ parts

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7,296

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-

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iodParts Technologies Inc.

India . 5,000 parts In-Stock

1+ parts

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5,000

-

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Problanco Electronics

Mexico . 3,937 parts In-Stock

1+ parts

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3,937

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TANS Electronics

Latvia . 3,772 parts In-Stock

1+ parts

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3,772

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-

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

1+ parts

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1,800

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-

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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568

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Authorized Procurement Solutions

USA . 50 parts In-Stock

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50

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Enhance the power and efficiency of your electronic devices with the MJD47T4G by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a maximum power dissipation of 15W and a collector-emitter voltage of 250V, this NPN transistor provides reliable and stable operation. Its compact design and surface mount capability make it ideal for a wide range of electronic applications. Trust Onsemi's reputation for quality and innovation, and experience the value and benefits that the MJD47T4G brings to your projects. Elevate your creations with this high-performing component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and lightweight packaging for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in low-power amplification and switching circuits, making this transistor versatile for different purposes.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling current flow.

Surface Mount: YES

Easily mountable on a PCB, allowing for compact and space-saving designs.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and placement on the circuit board.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows for reliable operation under high load conditions.

Minimum DC Current Gain (hFE): 10

Consistent and reliable current gain ensures stable performance in amplification and switching circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to function effectively in various environments.

Maximum Collector-Emitter Voltage: 250 V

High collector-emitter voltage rating makes this transistor suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and reliability, ensuring long-term performance.

Maximum Collector Current (IC): 1 A

High collector current rating allows for handling of larger loads in switching applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity for secure connections.

Nominal Transition Frequency (fT): 10 MHz

High transition frequency enables fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD47T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD47T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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