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MJD45H11-1G

Onsemi

MJD45H11-1G by Onsemi

MJD45H11-1G by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is in-line with matte tin finish, suitable for through-hole mounting.

Median Price

$1.300

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 58 parts In-Stock

1+ parts

$0.477

100+ parts

$0.449

1k+ parts

$0.406

10k+ parts

-

58

$0.477

$0.449

$0.406

-

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$0.808

100+ parts

$0.767

1k+ parts

$0.767

10k+ parts

-

500

$0.808

$0.767

$0.767

-

Farnell

UK . 2,326 parts In-Stock

1+ parts

$1.300

100+ parts

$0.530

1k+ parts

$0.415

10k+ parts

$0.330

2,326

$1.300

$0.530

$0.415

$0.330

Element14

Singapore . 2,326 parts In-Stock

1+ parts

$1.520

100+ parts

$0.640

1k+ parts

$0.590

10k+ parts

-

2,326

$1.520

$0.640

$0.590

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Mouser Electronics

USA . 4,423 parts In-Stock

1+ parts

$1.670

100+ parts

-

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-

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4,423

$1.670

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-

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DigiKey

USA . 231 parts In-Stock

1+ parts

$1.670

100+ parts

$0.742

1k+ parts

$0.554

10k+ parts

$0.425

231

$1.670

$0.742

$0.554

$0.425

Newark

USA . 2,290 parts In-Stock

1+ parts

$1.720

100+ parts

-

1k+ parts

$0.684

10k+ parts

$0.482

2,290

$1.720

-

$0.684

$0.482

Arrow

USA . 2,025 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.418

2,025

-

-

-

$0.418

Avnet

USA . 1,725 parts In-Stock

1+ parts

-

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-

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-

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1,725

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-

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Verical

USA . 1,575 parts In-Stock

1+ parts

-

100+ parts

-

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$0.415

1,575

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-

-

$0.415

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 151 parts In-Stock

1+ parts

$0.453

100+ parts

-

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151

$0.453

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.633

100+ parts

-

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300

$0.633

-

-

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Maritex

Poland . 66 parts In-Stock

1+ parts

$0.956

100+ parts

$0.537

1k+ parts

$0.463

10k+ parts

-

66

$0.956

$0.537

$0.463

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TME

Poland . 224 parts In-Stock

1+ parts

$1.530

100+ parts

$0.644

1k+ parts

$0.525

10k+ parts

$0.483

224

$1.530

$0.644

$0.525

$0.483

Chip Stock

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

-

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IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.526

1k+ parts

$0.513

10k+ parts

$0.481

3,000

-

$0.526

$0.513

$0.481

NAC Semi

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.967

10k+ parts

$0.870

2,400

-

-

$0.967

$0.870

Vyrian

USA . 2,194 parts In-Stock

1+ parts

-

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2,194

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Flip Electronics

USA . 525 parts In-Stock

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525

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,708 parts In-Stock

1+ parts

$0.352

100+ parts

$0.343

1k+ parts

$0.341

10k+ parts

-

3,708

$0.352

$0.343

$0.341

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Ampacity Inc.

Singapore . 1,455 parts In-Stock

1+ parts

$0.405

100+ parts

-

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-

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1,455

$0.405

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-

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Corphita

USA . 2,270 parts In-Stock

1+ parts

$0.429

100+ parts

-

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-

10k+ parts

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2,270

$0.429

-

-

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Corohmni

South Africa . 366 parts In-Stock

1+ parts

$0.477

100+ parts

-

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-

10k+ parts

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366

$0.477

-

-

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Continental Prestige Electronics

USA . 5,949 parts In-Stock

1+ parts

$0.506

100+ parts

-

1k+ parts

-

10k+ parts

$0.496

5,949

$0.506

-

-

$0.496

Argo Parts USA

USA . 4,087 parts In-Stock

1+ parts

$0.506

100+ parts

-

1k+ parts

-

10k+ parts

$0.491

4,087

$0.506

-

-

$0.491

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.808

100+ parts

$0.767

1k+ parts

$0.767

10k+ parts

-

500

$0.808

$0.767

$0.767

-

Aztec Data Supply Inc.

USA . 1,581 parts In-Stock

1+ parts

$1.060

100+ parts

-

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1,581

$1.060

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Perfect Parts

USA . 596,142 parts In-Stock

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596,142

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RC Electronics

USA . 76,021 parts In-Stock

1+ parts

-

100+ parts

$0.550

1k+ parts

$0.500

10k+ parts

$0.490

76,021

-

$0.550

$0.500

$0.490

Kepictronics

USA . 71,000 parts In-Stock

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71,000

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iodParts Technologies Inc.

India . 53,710 parts In-Stock

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53,710

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Lucentia Tech

USA . 46,312 parts In-Stock

1+ parts

-

100+ parts

$1.882

1k+ parts

$1.843

10k+ parts

$1.843

46,312

-

$1.882

$1.843

$1.843

A-Z Elektronik GmbH

Germany . 6,603 parts In-Stock

1+ parts

-

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6,603

-

-

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S.R.D Solutions

India . 5,000 parts In-Stock

1+ parts

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5,000

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Kulean Microsystems

USA . 4,770 parts In-Stock

1+ parts

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4,770

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Problanco Electronics

Mexico . 3,097 parts In-Stock

1+ parts

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3,097

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-

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TANS Electronics

Latvia . 2,729 parts In-Stock

1+ parts

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-

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2,729

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-

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SupplyDigital Components

Austria . 2,356 parts In-Stock

1+ parts

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2,356

-

-

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Lixinc

USA . 978 parts In-Stock

1+ parts

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978

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GreenTree Electronics

Israel . 900 parts In-Stock

1+ parts

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900

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UHIMA Technologies

Türkiye . 511 parts In-Stock

1+ parts

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511

-

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Robosynatics

Brazil . 100 parts In-Stock

1+ parts

-

100+ parts

$0.335

1k+ parts

$0.335

10k+ parts

$0.335

100

-

$0.335

$0.335

$0.335

Overview

Discover the power of reliable performance with the MJD45H11-1G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that offer unparalleled efficiency and durability. Ideal for switching applications, this PNP transistor provides seamless functionality with its single configuration and high DC current gain. With a maximum operating temperature of 150°C and a collector-emitter voltage of 80V, the MJD45H11-1G ensures optimal performance in various electronic devices. Trust Onsemi to deliver innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplified design and operation with a single transistor configuration.

Transistor Application: SWITCHING

Optimized for switching applications, providing reliable performance in such scenarios.

Package Shape: RECTANGULAR

Allows for easy integration into circuits and PCB layouts.

No. of Terminals: 3

Simplifies connections and reduces complexity in circuit design.

Maximum Power Dissipation (Abs): 20 W

Capable of dissipating high power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, expanding the range of potential applications.

Maximum Collector-Emitter Voltage: 80 V

Withstands high voltage levels, ensuring reliability in various circuit configurations.

Maximum Collector Current (IC): 8 A

Has a high collector current rating, making it suitable for applications requiring high current levels.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD45H11-1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD45H11-1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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