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BD13910S

Onsemi

BD13910S by Onsemi

The Onsemi BD13910S is a NPN Power BJT with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style suitable for through-hole mounting.

Median Price

$0.293

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$0.293

100+ parts

$0.278

1k+ parts

$0.278

10k+ parts

-

200

$0.293

$0.278

$0.278

-

Mouser Electronics

USA . 748 parts In-Stock

1+ parts

$0.710

100+ parts

$0.409

1k+ parts

$0.276

10k+ parts

$0.221

748

$0.710

$0.409

$0.276

$0.221

Verical

USA . 6,999 parts In-Stock

1+ parts

-

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$0.267

6,999

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$0.267

Rochester

USA . 3,082 parts In-Stock

1+ parts

-

100+ parts

$0.290

1k+ parts

$0.241

10k+ parts

$0.215

3,082

-

$0.290

$0.241

$0.215

DigiKey

USA . 3,082 parts In-Stock

1+ parts

-

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$0.360

10k+ parts

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3,082

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$0.360

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Distributors (In-Stock)

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Digiode

USA . 2,773 parts In-Stock

1+ parts

$0.225

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2,773

$0.225

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Nova Conductors

Japan . 200 parts In-Stock

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$0.290

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200

$0.290

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Chip Stock

USA . 9,700 parts In-Stock

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9,700

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VNN

France . 5,746 parts In-Stock

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5,746

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ComSIT Distribution GmbH

Germany . 3,750 parts In-Stock

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3,750

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Vyrian

USA . 1,591 parts In-Stock

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1,591

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ACDS - Activité Composants Distribution Service

France . 745 parts In-Stock

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745

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Distributors (Availability)

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Semicontronic

India . 2,937 parts In-Stock

1+ parts

$0.201

100+ parts

$0.196

1k+ parts

$0.195

10k+ parts

-

2,937

$0.201

$0.196

$0.195

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Ampacity Inc.

Singapore . 2,849 parts In-Stock

1+ parts

$0.201

100+ parts

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2,849

$0.201

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Corphita

USA . 673 parts In-Stock

1+ parts

$0.213

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673

$0.213

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Corohmni

South Africa . 424 parts In-Stock

1+ parts

$0.237

100+ parts

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424

$0.237

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Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.290

100+ parts

$0.276

1k+ parts

$0.262

10k+ parts

$0.258

300

$0.290

$0.276

$0.262

$0.258

Argo Parts USA

USA . 707 parts In-Stock

1+ parts

$0.290

100+ parts

-

1k+ parts

-

10k+ parts

$0.281

707

$0.290

-

-

$0.281

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.293

100+ parts

$0.278

1k+ parts

$0.278

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200

$0.293

$0.278

$0.278

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Aztec Data Supply Inc.

USA . 4,417 parts In-Stock

1+ parts

$0.627

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4,417

$0.627

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Andel Nordic

Denmark . 99 parts In-Stock

1+ parts

$1.110

100+ parts

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1k+ parts

$0.779

10k+ parts

$0.779

99

$1.110

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$0.779

$0.779

QUARKTWIN TECHNOLOGY LTD

USA . 12,684 parts In-Stock

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12,684

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Lixinc

USA . 11,301 parts In-Stock

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TANS Electronics

Latvia . 6,062 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,048 parts In-Stock

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SupplyDigital Components

Austria . 5,512 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,032 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Perfect Parts

USA . 3,331 parts In-Stock

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Metaverse IC Inc.

Canada . 3,216 parts In-Stock

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Continental Prestige Electronics

USA . 2,828 parts In-Stock

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$0.280

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2,828

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Problanco Electronics

Mexico . 2,397 parts In-Stock

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2,397

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Kulean Microsystems

USA . 951 parts In-Stock

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951

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UHIMA Technologies

Türkiye . 689 parts In-Stock

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689

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Supply Digital

USA . 670 parts In-Stock

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670

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

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100

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Overview

The Onsemi BD13910S is a high-quality Power BJT transistor that offers reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for switching applications. With a maximum power dissipation of 13W and a maximum operating temperature of 150°C, this transistor provides excellent functionality and efficiency. Whether you're working on automotive, industrial, or consumer electronics projects, the BD13910S offers the value, benefits, and advantages you need to bring your designs to life. Trust Onsemi for top-notch quality and performance with the BD13910S transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering reliable performance and ease of use.

Configuration: SINGLE

Simplifies circuit design by requiring only one transistor for operation, reducing component count and potential points of failure.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times and efficient operation in power control circuits.

Maximum Power Dissipation (Abs): 13 W

With a high power dissipation rating, this transistor can handle high load conditions without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, ensuring reliable performance in various environments.

Maximum Collector-Emitter Voltage: 80 V

Suitable for applications requiring high voltage handling capabilities, providing versatility in circuit design.

Maximum Collector Current (IC): 1.5 A

Capable of handling high current loads, making it suitable for power control and switching applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD13910S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD13910S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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