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BD139G

Onsemi

BD139G by Onsemi

The Onsemi BD139G is a NPN BJT transistor with max. power dissipation of 12.5W, hFE of 25, and max. collector current of 1.5A. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 80V, operating up to 150°C in a rectangular package style with through-hole terminals.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 3,191 parts In-Stock

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$0.412

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$0.206

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$0.160

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$0.137

3,191

$0.412

$0.206

$0.160

$0.137

Distrelec

Netherlands . 82 parts In-Stock

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$0.530

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$0.364

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$0.320

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82

$0.530

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$0.320

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Adafruit Industries

USA . 3,210 parts In-Stock

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$0.600

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$0.570

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$0.570

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$0.600

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Arrow

USA . 725 parts In-Stock

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$1.387

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$0.581

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$0.414

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$0.354

725

$1.387

$0.581

$0.414

$0.354

DigiKey

USA . 4,302 parts In-Stock

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$1.390

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$0.583

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$0.414

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$0.320

4,302

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Mouser Electronics

USA . 2,546 parts In-Stock

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$1.390

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$0.583

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Newark

USA . 1,036 parts In-Stock

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$1.510

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$0.704

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$0.536

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$0.441

1,036

$1.510

$0.704

$0.536

$0.441

Element14

Singapore . 1,512 parts In-Stock

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$1.980

100+ parts

$0.828

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$0.795

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$0.779

1,512

$1.980

$0.828

$0.795

$0.779

Verical

USA . 2,500 parts In-Stock

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$0.365

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$0.359

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$0.359

Master Electronics

USA . 2,500 parts In-Stock

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$0.291

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$0.279

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$0.279

Rochester

USA . 500 parts In-Stock

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$0.433

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$0.359

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$0.320

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$0.320

Chip1Stop

Japan . 17 parts In-Stock

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Nova Conductors

Japan . 800 parts In-Stock

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$0.315

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$0.315

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Digiode

USA . 1,229 parts In-Stock

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$0.332

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$0.332

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IBS Electronics

USA . 10,078 parts In-Stock

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$0.722

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$0.442

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$0.470

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$0.470

Chip Stock

USA . 6,085 parts In-Stock

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LWI Electronics Inc

India . 3,165 parts In-Stock

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Vyrian

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NAC Semi

USA . 2,500 parts In-Stock

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$0.690

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$0.627

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$0.627

Cyclops Electronics Ltd

UK . 861 parts In-Stock

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861

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Flip Electronics

USA . 500 parts In-Stock

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Flex Direct, LLC

USA . 490 parts In-Stock

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490

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Bristol Electronics

USA . 478 parts In-Stock

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Holdelec - ElecDif-Pro

France . 347 parts In-Stock

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VNN

France . 100 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 16 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 2,434 parts In-Stock

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$0.248

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$0.242

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$0.241

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2,434

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$0.241

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Continental Prestige Electronics

USA . 4,782 parts In-Stock

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$0.285

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$0.280

4,782

$0.285

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$0.280

Argo Parts USA

USA . 1,317 parts In-Stock

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$0.285

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$0.277

1,317

$0.285

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$0.277

Corohmni

South Africa . 466 parts In-Stock

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$0.308

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Corphita

USA . 204 parts In-Stock

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Ampacity Inc.

Singapore . 2,490 parts In-Stock

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$0.540

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2,490

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Advanced Electronics

New Zealand . 3,210 parts In-Stock

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$0.600

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$0.570

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$0.570

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Aztec Data Supply Inc.

USA . 4,127 parts In-Stock

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$0.779

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Perfect Parts

USA . 125,141 parts In-Stock

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Lixinc

USA . 13,260 parts In-Stock

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Infinite Electronics LLP (Excess)

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A-Z Elektronik GmbH

Germany . 6,668 parts In-Stock

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Problanco Electronics

Mexico . 5,710 parts In-Stock

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SupplyDigital Components

Austria . 4,560 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,445 parts In-Stock

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Kulean Microsystems

USA . 3,089 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Formix International (Excess)

India . 1,415 parts In-Stock

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Eastek

USA . 990 parts In-Stock

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$0.370

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UHIMA Technologies

Türkiye . 871 parts In-Stock

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iodParts Technologies Inc.

India . 504 parts In-Stock

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TANS Electronics

Latvia . 494 parts In-Stock

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Robosynatics

Brazil . 150 parts In-Stock

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Lucentia Tech

USA . 150 parts In-Stock

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GreenTree Electronics

Israel . 100 parts In-Stock

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Overview

Upgrade your amplifier circuits with the BD139G by Onsemi. As a leading manufacturer in power bipolar junction transistors, Onsemi delivers high-quality products with reliable performance. The BD139G is perfect for various amplifier applications, offering a maximum power dissipation of 12.5W and a maximum collector-emitter voltage of 80V. With a minimum DC current gain of 25, this NPN transistor provides excellent amplification capabilities for your projects. Trust Onsemi to provide you with top-notch components that will take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and have high input impedance, making them suitable for amplifiers and other signal processing applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easy to use in different amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for signal amplification and provides reliable performance.

Maximum Power Dissipation (Abs): 12.5 W

With a high maximum power dissipation, this transistor can handle large power loads, making it suitable for high-power amplification applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows this transistor to handle higher voltage levels, making it suitable for a wider range of applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD139G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD139G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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