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BD139-10

NXP Semiconductors

BD139-10 by NXP Semiconductors

BD139-10 by NXP Semiconductors is a power bipolar junction transistor (BJT) with an NPN polarity. It has a max VCEsat of 0.5V and can handle a max collector-emitter voltage of 80V. This transistor is commonly used in amplifier applications due to its high DC current gain and low power dissipation.

Median Price

$0.352

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38

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1k+

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Adafruit Industries

USA . 40 parts In-Stock

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$0.200

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$0.190

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$0.200

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$0.190

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Arrow

USA . 13,061 parts In-Stock

1+ parts

$0.362

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$0.144

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$0.097

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$0.089

13,061

$0.362

$0.144

$0.097

$0.089

Distrelec

Netherlands . 1,722 parts In-Stock

1+ parts

$0.364

100+ parts

$0.309

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$0.199

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$0.143

1,722

$0.364

$0.309

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$0.143

Newark

USA . 1,244 parts In-Stock

1+ parts

$0.659

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$0.262

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$0.177

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$0.130

1,244

$0.659

$0.262

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$0.130

Mouser Electronics

USA . 16,467 parts In-Stock

1+ parts

$1.130

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$0.511

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$0.233

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$0.156

16,467

$1.130

$0.511

$0.233

$0.156

DigiKey

USA . 2,968 parts In-Stock

1+ parts

$1.370

100+ parts

$0.568

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$0.402

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$0.308

2,968

$1.370

$0.568

$0.402

$0.308

EBV Elektronik

Germany . 43,500 parts In-Stock

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Chip1Stop

Japan . 23,286 parts In-Stock

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Verical

USA . 11,935 parts In-Stock

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$0.257

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$0.174

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Farnell

UK . 10,066 parts In-Stock

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$0.148

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$0.095

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$0.089

10,066

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Element14

Singapore . 5,034 parts In-Stock

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$0.341

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$0.219

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RS (Exports)

UK . 450 parts In-Stock

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$1.567

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$1.473

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Future Electronics

Canada . 300 parts In-Stock

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$0.090

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$0.086

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$0.078

300

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Distributors (In-Stock)

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Nova Conductors

Japan . 20 parts In-Stock

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$0.168

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Digiode

USA . 5,561 parts In-Stock

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TME

Poland . 1,026 parts In-Stock

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$0.630

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$0.173

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$0.140

1,026

$0.630

$0.253

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$0.140

Halfin

Belgium . 13,438 parts In-Stock

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Vyrian

USA . 10,179 parts In-Stock

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IBS Electronics

USA . 8,500 parts In-Stock

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Rutronik

Germany . 6,750 parts In-Stock

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$0.182

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$0.146

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$0.134

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Anansix

USA . 4,830 parts In-Stock

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Cyclops Electronics Ltd

UK . 4,750 parts In-Stock

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VNN

France . 4,570 parts In-Stock

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Chip Stock

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GES GmbH

Germany . 768 parts In-Stock

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Micros

Poland . 700 parts In-Stock

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Partservice

France . 700 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 700 parts In-Stock

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Euro-Tech

UK . 420 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 250 parts In-Stock

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Pegasus Components GmbH

Germany . 225 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 168 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 118 parts In-Stock

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ECAB

Sweden . 113 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 62 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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LittleDiode

UK . 7 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 13,341 parts In-Stock

1+ parts

$0.081

100+ parts

$0.079

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$0.079

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13,341

$0.081

$0.079

$0.079

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Ampacity Inc.

Singapore . 9,810 parts In-Stock

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$0.081

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$0.081

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Aranea Global

USA . 1,100 parts In-Stock

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$0.165

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$0.158

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$0.165

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Argo Parts USA

USA . 5,383 parts In-Stock

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$0.168

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$0.163

5,383

$0.168

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$0.163

Corphita

USA . 6,021 parts In-Stock

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$0.180

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Modulus Dynamics

Lithuania . 2,019 parts In-Stock

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$0.194

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$0.186

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$0.178

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$0.194

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Corohmni

South Africa . 546 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Continental Prestige Electronics

USA . 9,493 parts In-Stock

1+ parts

$0.369

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$0.246

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$0.137

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$0.120

9,493

$0.369

$0.246

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$0.120

Component Stockers USA

USA . 2,010 parts In-Stock

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$0.400

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$0.240

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$0.150

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$0.400

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IDEA Electronic Components Group

UK . 460 parts In-Stock

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$1.543

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$1.389

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460

$1.543

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$1.389

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MKK Technologies

India . 1,704 parts In-Stock

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$2.901

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1,704

$2.901

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DigiPath Technology Company

USA . 1,704 parts In-Stock

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$2.901

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$2.901

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GreenTree Electronics

Israel . 31,390 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,896 parts In-Stock

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Perfect Parts

USA . 14,728 parts In-Stock

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Eastek

USA . 10,100 parts In-Stock

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Lixinc

USA . 8,792 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,269 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,179 parts In-Stock

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Epart123

USA . 4,000 parts In-Stock

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$0.270

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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UNI Independent Distributors

Spain . 3,326 parts In-Stock

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Supply Digital

USA . 1,919 parts In-Stock

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Kepictronics

USA . 900 parts In-Stock

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900

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Parana Technologies

USA . 559 parts In-Stock

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$1.845

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$1.845

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Assy Fe

Spain . 510 parts In-Stock

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510

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Allen Electronics Distributors

USA . 450 parts In-Stock

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$48.860

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450

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$48.860

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Formix International (Excess)

India . 282 parts In-Stock

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282

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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Overview

Upgrade your amplification game with the BD139-10 by NXP Semiconductors! As a leading manufacturer in the industry, NXP Semiconductors is known for its top-quality products. The BD139-10 belongs to the category of Power Bipolar Junction Transistors and offers incredible value and advantages to customers. Whether you're looking to amplify audio signals or enhance performance in your electronic projects, this NPN transistor has got you covered. With its low VCEsat of just 0.5V, it maximizes efficiency while delivering powerful results. Its compact rectangular package shape and through-hole terminal form make it easy to integrate into your designs. Experience exceptional performance and reliability with the BD139-10 – the perfect choice for amplifiers and more!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and excellent protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other components in a circuit, enhancing its versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and makes this transistor easy to use and integrate into amplifier applications.

Transistor Application: AMPLIFIER

The amplifier application of this transistor allows it to effectively amplify signals, making it an ideal choice for audio and other amplification tasks.

Maximum VCEsat: 0.5 V

With a low maximum VCEsat of only 0.5V, this transistor offers minimal voltage drop, resulting in efficient power transfer and reduced heat dissipation.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and facilitates efficient heat dissipation, ensuring optimal performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure and reliable soldering, making it suitable for applications requiring mechanical strength and stability.

No. of Elements: 1

Having one element simplifies circuit design and reduces complexities for optimal performance.

No. of Terminals: 3

The presence of three terminals facilitates easy connection and integration of the transistor in various circuit configurations.

Maximum Power Dissipation (Abs): 8 W

With a maximum power dissipation of 8W, this transistor can handle high power loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style ensures easy installation and robust mechanical support for improved reliability.

Maximum Power Dissipation Ambient: 8 W

With a maximum power dissipation of 8W in ambient conditions, this transistor can operate effectively even under high-temperature environments.

Minimum DC Current Gain (hFE): 63

The minimum DC current gain of 63 guarantees stable and reliable amplification performance, ensuring accurate signal reproduction.

Maximum Operating Temperature: 150 °C

This transistor's ability to withstand temperatures up to 150°C makes it suitable for use in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80V, this transistor provides ample headroom and voltage handling capabilities for a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high conductivity, low power loss, and excellent overall performance.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current rating of 1.5A, this transistor can handle high current loads, making it ideal for applications with elevated power requirements.

Terminal Position: SINGLE

The single terminal position simplifies connection and integration, reducing errors and enhancing overall reliability.

Case Connection: COLLECTOR

The case connection being assigned to the collector ensures proper grounding and efficient dissipation of heat, contributing to better overall performance.

Nominal Transition Frequency (fT): 190 MHz

With a nominal transition frequency of 190MHz, this transistor exhibits excellent high-frequency response, making it well-suited for applications that require amplification of fast-moving signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD139-10 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

8 W

Maximum Power Dissipation (Abs):

8 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BD139-10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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