Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BD139-10 by NXP Semiconductors is a power bipolar junction transistor (BJT) with an NPN polarity. It has a max VCEsat of 0.5V and can handle a max collector-emitter voltage of 80V. This transistor is commonly used in amplifier applications due to its high DC current gain and low power dissipation.
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The plastic/epoxy package body material provides durability and excellent protection for the transistor, making it suitable for various applications.
The NPN polarity allows for easy integration with other components in a circuit, enhancing its versatility.
The single configuration simplifies circuit design and makes this transistor easy to use and integrate into amplifier applications.
The amplifier application of this transistor allows it to effectively amplify signals, making it an ideal choice for audio and other amplification tasks.
With a low maximum VCEsat of only 0.5V, this transistor offers minimal voltage drop, resulting in efficient power transfer and reduced heat dissipation.
The rectangular package shape provides easy mounting and facilitates efficient heat dissipation, ensuring optimal performance.
The through-hole terminal form allows for secure and reliable soldering, making it suitable for applications requiring mechanical strength and stability.
Having one element simplifies circuit design and reduces complexities for optimal performance.
The presence of three terminals facilitates easy connection and integration of the transistor in various circuit configurations.
With a maximum power dissipation of 8W, this transistor can handle high power loads, making it suitable for demanding applications.
The flange mount package style ensures easy installation and robust mechanical support for improved reliability.
With a maximum power dissipation of 8W in ambient conditions, this transistor can operate effectively even under high-temperature environments.
The minimum DC current gain of 63 guarantees stable and reliable amplification performance, ensuring accurate signal reproduction.
This transistor's ability to withstand temperatures up to 150°C makes it suitable for use in high-temperature environments without compromising performance.
With a maximum collector-emitter voltage of 80V, this transistor provides ample headroom and voltage handling capabilities for a wide range of applications.
The use of silicon as the transistor element material ensures high conductivity, low power loss, and excellent overall performance.
With a maximum collector current rating of 1.5A, this transistor can handle high current loads, making it ideal for applications with elevated power requirements.
The single terminal position simplifies connection and integration, reducing errors and enhancing overall reliability.
The case connection being assigned to the collector ensures proper grounding and efficient dissipation of heat, contributing to better overall performance.
With a nominal transition frequency of 190MHz, this transistor exhibits excellent high-frequency response, making it well-suited for applications that require amplification of fast-moving signals.
Power Bipolar Junction Transistors (BJT) BD139-10 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
Maximum VCEsat:
BD139-10 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LL4148
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;
MBRA340T3G
Onsemi
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N7002
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
BSS138
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
LM107H/883
Texas Instruments
LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.
SS14
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Goodwork Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Synsemi
Panjit International
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
1N4148
Multicomp Pro
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Eic Semiconductor
FDV304P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
BD1396STU
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BD140-16
SPC TECHNOLOGY/ MULTICOMP
PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 100; Terminal Form: THROUGH-HOLE;
TIP115
Motorola
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
MJE340
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
MJD31CT4
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A; Transistor Application: SWITCHING;
TIP41CG
TIP41CG by Onsemi is a NPN power BJT with 65W max power dissipation, 100V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. Its package style is flange mount with through-hole terminals.
TIP42C
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD243C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum VCEsat: 1.5 V;
ULN2803ANE4
ULN2803ANE4 by Texas Instruments is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. It features a max collector-emitter voltage of 50V, collector current of 0.5A, and can operate at temperatures up to 150°C. This NPN transistor comes in a rectangular package with through-hole terminals.
TIP147
Continental Device India
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
ULN2804APG
Toshiba
Toshiba's ULN2804APG is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a min DC current gain of 1000x, it can handle up to 0.5A collector current at 50V collector-emitter voltage. This through-hole package with 18 terminals is made of silicon material in a rectangular shape.
TIP29C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
MJD340T4
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;
BUT30V
STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.
ZTX851
Diodes Incorporated
ZTX851 by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 60V, max. collector current of 5A, and min. DC current gain of 100. It is used in power applications where high switching speeds up to 130MHz are required, operating at temperatures up to 200°C for efficient performance.
TIP125
Power Innovations
Power Bipolar Transistors; Surface Mount: NO; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE;
Tt Electronics Plc
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
TIP110
Rectron
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
BDX53C
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
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BD139-16
NXP Semiconductors
BD139-16 by NXP Semiconductors is a NPN BJT transistor with 80V VCE, 1.5A IC, and 100 hFE. It is ideal for amplifier applications with a max power dissipation of 8W in a through-hole package style. Operating up to 150°C, it offers a transition frequency of 190MHz for high-performance requirements.
Samsung
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
BD13916
BD13916 by Fairchild Semiconductor is a NPN BJT transistor with max. power dissipation of 12.5W and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 100, it operates at up to 150°C and has a max. collector-emitter voltage of 80V in a through-hole package style.
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A;
BD13916STU
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT;
BD13916STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 12.5W Ptot. Ideal for switching applications, it has hFE of min. 100 and operates up to 150°C. The package is through-hole with matte tin finish, suitable for flange mount configurations.
BD139
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; No. of Terminals: 3;
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; JEDEC-95 Code: TO-126;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
Micro Commercial Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 25;
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Transistor Application: AMPLIFIER; Maximum VCEsat: .5 V;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; Minimum DC Current Gain (hFE): 25;
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