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2N3055G

Onsemi

2N3055G by Onsemi

2N3055G by Onsemi is a NPN Power BJT with max. power dissipation of 115W, max. collector-emitter voltage of 60V, and max. collector current of 15A. It is used for switching applications due to its single configuration and high transition frequency of 2.5MHz in a round package shape with flange mount style.

Median Price

$4.545

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 348 parts In-Stock

1+ parts

$3.860

100+ parts

$2.030

1k+ parts

$1.720

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348

$3.860

$2.030

$1.720

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Distrelec

Netherlands . 5 parts In-Stock

1+ parts

$4.545

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$3.839

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$3.155

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5

$4.545

$3.839

$3.155

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Chip1Stop

Japan . 300 parts In-Stock

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$5.230

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$2.640

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$2.630

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$5.230

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$2.630

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Mouser Electronics

USA . 3,695 parts In-Stock

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$5.550

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$5.550

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DigiKey

USA . 3,433 parts In-Stock

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$5.550

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$2.656

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$2.107

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Arrow

USA . 130 parts In-Stock

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$5.575

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$2.528

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$2.151

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Newark

USA . 541 parts In-Stock

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$6.360

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$3.460

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541

$6.360

$3.460

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Element14

Singapore . 1,039 parts In-Stock

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$7.880

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$5.170

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$4.960

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1,039

$7.880

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Future Electronics

Canada . 3,600 parts In-Stock

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$2.130

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$2.060

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RS (Exports)

UK . 1,206 parts In-Stock

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$3.080

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$3.026

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Master Electronics

USA . 930 parts In-Stock

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$2.120

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$2.010

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$1.970

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Verical

USA . 900 parts In-Stock

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Avnet

USA . 300 parts In-Stock

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$2.161

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$2.055

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$2.031

300

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$2.161

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$2.031

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$3.260

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Digiode

USA . 662 parts In-Stock

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$4.318

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TME

Poland . 310 parts In-Stock

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$2.650

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$2.420

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Forefront Electronics and Design

USA . 7 parts In-Stock

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$12.250

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$12.250

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Ozdisan Elektronik

Türkiye . 65 parts In-Stock

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$73.933

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NAC Semi

USA . 52,700 parts In-Stock

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$4.440

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IBS Electronics

USA . 21,432 parts In-Stock

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$4.642

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$3.071

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Flip Electronics

USA . 17,900 parts In-Stock

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VNN

France . 3,959 parts In-Stock

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Vyrian

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Chip Stock

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Diverse Electronics

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ACDS - Activité Composants Distribution Service

France . 137 parts In-Stock

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Holdelec - ElecDif-Pro

France . 127 parts In-Stock

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Bristol Electronics

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Rapid Electronics

USA . 90 parts In-Stock

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Huijzer Components

Netherlands . 84 parts In-Stock

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Prism Electronics

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ComSIT Distribution GmbH

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GES GmbH

Germany . 1 parts In-Stock

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ABC Electronics Ltd.

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.060

100+ parts

$1.007

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$1.007

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450

$1.060

$1.007

$1.007

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Aztec Data Supply Inc.

USA . 4,624 parts In-Stock

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$1.237

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$1.237

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Semicontronic

India . 1,090 parts In-Stock

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$1.880

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$1.833

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$1.824

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1,090

$1.880

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Corohmni

South Africa . 65 parts In-Stock

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$2.210

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Continental Prestige Electronics

USA . 4,780 parts In-Stock

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$2.845

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$2.788

4,780

$2.845

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$2.788

Argo Parts USA

USA . 263 parts In-Stock

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$2.845

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$2.845

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Modulus Dynamics

Lithuania . 29 parts In-Stock

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$3.241

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$3.209

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$3.112

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29

$3.241

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Netroflash

USA . 100 parts In-Stock

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$3.260

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$3.260

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Ampacity Inc.

Singapore . 799 parts In-Stock

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$4.090

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Corphita

USA . 1,364 parts In-Stock

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$4.090

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Microchip USA

USA . 5,077 parts In-Stock

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$29.315

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$29.315

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$29.315

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$29.315

5,077

$29.315

$29.315

$29.315

$29.315

Perfect Parts

USA . 47,873 parts In-Stock

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Lixinc

USA . 13,130 parts In-Stock

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SupplyDigital Components

Austria . 7,873 parts In-Stock

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Problanco Electronics

Mexico . 5,821 parts In-Stock

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TANS Electronics

Latvia . 3,793 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Kulean Microsystems

USA . 1,179 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

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900

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UHIMA Technologies

Türkiye . 579 parts In-Stock

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579

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ChipstoGo Electronic ltd

UK . 351 parts In-Stock

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351

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Metaverse IC Inc.

Canada . 172 parts In-Stock

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Computer Components Inc. - USA

USA . 153 parts In-Stock

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GreenTree Electronics

Israel . 146 parts In-Stock

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Eastek

USA . 50 parts In-Stock

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$3.167

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Allen Electronics Distributors

USA . 4 parts In-Stock

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Overview

Upgrade your power applications with the reliable 2N3055G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJTs) like the 2N3055G, known for its NPN polarity and switching capabilities. Whether you're looking to enhance performance or increase efficiency, this single-configured transistor offers a maximum power dissipation of 115W and a maximum collector-emitter voltage of 60V. With a durable metal package body material and a wide operating temperature range, the 2N3055G is the perfect choice for your next project. Experience the value and benefits that this high-performance transistor can bring to your designs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and heat dissipation, making the transistor suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering good performance and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and enhances reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such tasks.

Maximum Power Dissipation (Abs): 115 W

High power dissipation capability allows the transistor to handle demanding tasks without overheating.

Maximum Collector-Emitter Voltage: 60 V

60V collector-emitter voltage rating provides a wide range of operating conditions and compatibility with various circuits.

Nominal Transition Frequency (fT): 2.5 MHz

High transition frequency enables fast switching speeds, crucial for efficient operation in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3055G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3055G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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