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TIP111G

Onsemi

TIP111G by Onsemi

TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.

Median Price

$0.428

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 138 parts In-Stock

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$0.155

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$0.152

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$0.149

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$0.145

138

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$0.145

Bürklin Elektronik

Germany . 12 parts In-Stock

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$0.300

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12

$0.300

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Rochester

USA . 1,500 parts In-Stock

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$0.392

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$0.368

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$0.333

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$0.392

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$0.333

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Adafruit Industries

USA . 100 parts In-Stock

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$0.465

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$0.441

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$0.441

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100

$0.465

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$0.441

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Chip1Stop

Japan . 63 parts In-Stock

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$0.507

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$0.358

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Mouser Electronics

USA . 702 parts In-Stock

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$1.450

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$0.681

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$0.396

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$0.384

702

$1.450

$0.681

$0.396

$0.384

DigiKey

USA . 54 parts In-Stock

1+ parts

$1.450

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$0.607

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$0.433

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$0.336

54

$1.450

$0.607

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$0.336

Verical

USA . 3,400 parts In-Stock

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$0.338

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$0.338

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Avnet

USA . 2,000 parts In-Stock

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Digiode

USA . 2,313 parts In-Stock

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$0.285

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Nova Conductors

Japan . 10 parts In-Stock

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$0.440

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Bristol Electronics

USA . 1,538 parts In-Stock

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$1.125

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$0.416

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$0.292

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$1.125

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TME

Poland . 200 parts In-Stock

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$1.360

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$0.534

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$0.436

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200

$1.360

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$0.436

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Vyrian

USA . 4,131 parts In-Stock

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Flip Electronics

USA . 3,800 parts In-Stock

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Dan-Mar Components

USA . 1,500 parts In-Stock

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Semtec, LLC

USA . 745 parts In-Stock

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Chip Stock

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710

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IBS Electronics

USA . 650 parts In-Stock

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$0.547

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$0.526

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$0.498

650

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$0.547

$0.526

$0.498

NAC Semi

USA . 500 parts In-Stock

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$0.523

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500

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$0.523

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ACDS - Activité Composants Distribution Service

France . 450 parts In-Stock

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Microfarads

USA . 36 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 698 parts In-Stock

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$0.255

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698

$0.255

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Semicontronic

India . 434 parts In-Stock

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$0.255

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$0.249

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$0.247

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Corphita

USA . 663 parts In-Stock

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$0.270

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Corohmni

South Africa . 399 parts In-Stock

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Argo Parts USA

USA . 2,639 parts In-Stock

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$0.436

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$0.423

2,639

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Continental Prestige Electronics

USA . 1,500 parts In-Stock

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$0.453

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$0.259

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$0.174

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$0.453

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.465

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$0.441

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$0.441

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Modulus Dynamics

Lithuania . 99 parts In-Stock

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$0.477

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$0.473

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$0.458

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Aztec Data Supply Inc.

USA . 268 parts In-Stock

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$1.710

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SupplyDigital Components

Austria . 7,439 parts In-Stock

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Kulean Microsystems

USA . 6,477 parts In-Stock

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TANS Electronics

Latvia . 5,440 parts In-Stock

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Perfect Parts

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Kepictronics

USA . 4,500 parts In-Stock

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Problanco Electronics

Mexico . 1,323 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 974 parts In-Stock

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iodParts Technologies Inc.

India . 950 parts In-Stock

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Robosynatics

Brazil . 300 parts In-Stock

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$17.143

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$17.143

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$17.143

$17.143

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Lucentia Tech

USA . 300 parts In-Stock

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$17.143

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$17.143

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$17.143

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$17.143

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$17.143

UHIMA Technologies

Türkiye . 87 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi TIP111G Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor is designed for high performance amplifier applications. With a maximum power dissipation of 50W and a minimum DC current gain of 500, this transistor offers exceptional reliability and efficiency. The package shape and terminal form make it easy to integrate into your electronic projects. Trust Onsemi to deliver top-quality components that elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and provides good insulation for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits due to their high input impedance and current amplification capabilities.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor help simplify circuit design and improve efficiency.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor can provide high power amplification with low distortion.

Maximum Power Dissipation (Abs): 50 W

With a high power dissipation capability, this transistor can handle high power loads without overheating.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating ensures that this transistor can operate safely in a wide range of voltage conditions.

Maximum Collector Current (IC): 2 A

The high collector current rating allows this transistor to handle high current loads with ease, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP111G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

TIP111G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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