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FZT851TA

Diodes Incorporated

FZT851TA by Diodes Incorporated

FZT851TA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 6A IC, and 3W Ptot. Ideal for switching applications, it has hFE of min. 100 and fT of 130MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

Median Price

$0.469

Lifecycle Status

Suppliers In-Stock

41

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 270 parts In-Stock

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$1.564

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$1.485

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$1.485

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270

$1.564

$1.485

$1.485

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Mouser Electronics

USA . 14,132 parts In-Stock

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$1.570

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$0.657

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$0.515

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14,132

$1.570

$0.657

$0.515

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DigiKey

USA . 8,220 parts In-Stock

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$0.469

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$0.363

8,220

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$0.469

$0.363

Arrow

USA . 68 parts In-Stock

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$0.328

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68

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$0.328

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Verical

USA . 68 parts In-Stock

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$0.328

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68

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$0.328

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.541

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500

$0.541

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Maritex

Poland . 4,599 parts In-Stock

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$0.605

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$0.321

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$0.259

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$0.230

4,599

$0.605

$0.321

$0.259

$0.230

Bristol Electronics

USA . 2,888 parts In-Stock

1+ parts

$1.050

100+ parts

$0.389

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$0.273

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2,888

$1.050

$0.389

$0.273

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Ozdisan Elektronik

Türkiye . 4,707 parts In-Stock

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$56.010

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4,707

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Vyrian

USA . 120,373 parts In-Stock

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IBS Electronics

USA . 112,000 parts In-Stock

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$0.715

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$0.694

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Chip Stock

USA . 31,500 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 28,991 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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Freddi Giovanni

Italy . 4,000 parts In-Stock

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Dan-Mar Components

USA . 2,718 parts In-Stock

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2,718

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Rebound Electronics

UK . 1,961 parts In-Stock

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1,961

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LIBRA Elektronik GmbH

Germany . 1,839 parts In-Stock

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ECAB

Sweden . 1,646 parts In-Stock

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1,646

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Pegasus Components GmbH

Germany . 1,500 parts In-Stock

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1,500

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Partservice

France . 1,370 parts In-Stock

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$0.335

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$0.335

1,370

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$0.335

$0.335

Connect4Technologies Inc.

Canada . 1,097 parts In-Stock

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Inventory MP

USA . 1,076 parts In-Stock

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Rutronik

Germany . 1,000 parts In-Stock

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$0.380

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$0.320

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$0.380

$0.320

Micros sp.j. W. Kędra i J. Lic

Poland . 1,000 parts In-Stock

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$0.348

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$0.348

1,000

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$0.348

ComSIT Distribution GmbH

Germany . 890 parts In-Stock

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890

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ComSIT USA

USA . 890 parts In-Stock

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Holdelec - ElecDif-Pro

France . 800 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 577 parts In-Stock

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Martec Srl

Italy . 497 parts In-Stock

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497

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Micros

Poland . 370 parts In-Stock

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$0.382

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370

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Extreme Components

USA . 300 parts In-Stock

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300

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North Shore Components

USA . 230 parts In-Stock

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PC Components Company LLC

USA . 187 parts In-Stock

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EPE Components Inc.

USA . 166 parts In-Stock

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Semtec, LLC

USA . 150 parts In-Stock

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150

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Semi Source

USA . 137 parts In-Stock

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137

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QIE Inc.

USA . 100 parts In-Stock

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100

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EMSNET

USA . 64 parts In-Stock

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Prism Electronics

USA . 24 parts In-Stock

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Cyclops Electronics Ltd

UK . 7 parts In-Stock

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7

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Distributors (Availability)

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Component Stockers USA

USA . 140 parts In-Stock

1+ parts

$0.460

100+ parts

$0.380

1k+ parts

$0.290

10k+ parts

$0.190

140

$0.460

$0.380

$0.290

$0.190

Argo Parts USA

USA . 3,543 parts In-Stock

1+ parts

$0.541

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$0.525

3,543

$0.541

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$0.525

Continental Prestige Electronics

USA . 1,913 parts In-Stock

1+ parts

$0.541

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$0.530

1,913

$0.541

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$0.530

Aztec Data Supply Inc.

USA . 1,698 parts In-Stock

1+ parts

$0.957

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1,698

$0.957

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$1.564

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$1.485

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$1.485

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270

$1.564

$1.485

$1.485

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Perfect Parts

USA . 199,020 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 31,517 parts In-Stock

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31,517

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QUARKTWIN TECHNOLOGY LTD

USA . 28,153 parts In-Stock

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28,153

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Eastek

USA . 16,000 parts In-Stock

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$0.338

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16,000

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$0.338

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Lixinc

USA . 14,128 parts In-Stock

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14,128

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Glotronic Ltd.

UK . 10,400 parts In-Stock

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Futuretech Components

Singapore . 6,000 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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iodParts Technologies Inc.

India . 2,607 parts In-Stock

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$0.427

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2,607

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$0.427

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Assy Fe

Spain . 1,880 parts In-Stock

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1,880

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S.R.D Solutions

India . 500 parts In-Stock

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500

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Cyclops Electronics Ltd (Excess)

UK . 235 parts In-Stock

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235

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Overview

Unleash the power of innovation with the FZT851TA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Power Bipolar Junction Transistors (BJTs) like no other. Ideal for switching applications, this NPN transistor offers reliability and efficiency in a compact package. With a maximum collector-emitter voltage of 60V and a maximum collector current of 6A, the FZT851TA provides exceptional performance that exceeds expectations. Experience seamless operation and superior functionality with this cutting-edge product. Elevate your projects to new heights with the FZT851TA from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes in electronic circuits.

Configuration: SINGLE

Simplified design and easy integration into circuit layouts.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Easy to mount on circuit boards, facilitating a streamlined assembly process.

Package Shape: RECTANGULAR

Compact and space-saving design for enhanced flexibility in circuit layout.

No. of Terminals: 4

Provides necessary connections while keeping the design simple and efficient.

Maximum Power Dissipation (Abs): 3 W

Can handle higher power dissipation levels, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 100

Ensures stable and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, increasing its versatility in various applications.

Maximum Collector-Emitter Voltage: 60 V

Can handle higher voltages, making it suitable for applications that require voltage switching.

Maximum Collector Current (IC): 6 A

Capable of handling high current loads, ensuring reliable performance in power applications.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant terminal finish for long-term performance.

Nominal Transition Frequency (fT): 130 MHz

High frequency capability for fast switching performance in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT851TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT851TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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