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BD14016STU

Onsemi

BD14016STU by Onsemi

BD14016STU by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and max power dissipation of 12.5W.

Median Price

$0.333

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 150 parts In-Stock

1+ parts

$0.330

100+ parts

$0.313

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$0.313

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150

$0.330

$0.313

$0.313

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Arrow

USA . 25 parts In-Stock

1+ parts

$0.333

100+ parts

$0.271

1k+ parts

$0.264

10k+ parts

$0.258

25

$0.333

$0.271

$0.264

$0.258

Mouser Electronics

USA . 2,765 parts In-Stock

1+ parts

$0.720

100+ parts

$0.430

1k+ parts

$0.306

10k+ parts

$0.273

2,765

$0.720

$0.430

$0.306

$0.273

Flip Electronics (Authorized)

USA . 36,480 parts In-Stock

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36,480

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DigiKey

USA . 15,692 parts In-Stock

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$0.210

15,692

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$0.210

RS (Exports)

UK . 900 parts In-Stock

1+ parts

-

100+ parts

$0.613

1k+ parts

$0.553

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900

-

$0.613

$0.553

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Chip1Stop

Japan . 195 parts In-Stock

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-

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$0.426

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195

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$0.426

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Verical

USA . 28 parts In-Stock

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$0.264

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$0.257

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$0.251

28

-

$0.264

$0.257

$0.251

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,784 parts In-Stock

1+ parts

$0.314

100+ parts

-

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1,784

$0.314

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Nova Conductors

Japan . 49 parts In-Stock

1+ parts

$0.319

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49

$0.319

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TME

Poland . 10 parts In-Stock

1+ parts

$0.515

100+ parts

$0.409

1k+ parts

$0.343

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10

$0.515

$0.409

$0.343

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Sensible Micro Corp

USA . 20,754 parts In-Stock

1+ parts

-

100+ parts

$0.204

1k+ parts

$0.190

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20,754

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$0.204

$0.190

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North Shore Components

USA . 20,030 parts In-Stock

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20,030

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IBS Electronics

USA . 19,200 parts In-Stock

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$0.295

19,200

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$0.295

Flip Electronics

USA . 15,692 parts In-Stock

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15,692

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Vyrian

USA . 8,283 parts In-Stock

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8,283

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Rebound Electronics

UK . 3,940 parts In-Stock

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Chip Stock

USA . 3,075 parts In-Stock

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3,075

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Dan-Mar Components

USA . 2,880 parts In-Stock

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2,880

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ACDS - Activité Composants Distribution Service

France . 1,920 parts In-Stock

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VNN

France . 1,110 parts In-Stock

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1,110

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LIBRA Elektronik GmbH

Germany . 1,009 parts In-Stock

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1,009

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Lakeland Logistics Inc

USA . 270 parts In-Stock

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270

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Micros

Poland . 240 parts In-Stock

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$0.360

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240

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$0.360

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Partservice

France . 240 parts In-Stock

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$0.347

10k+ parts

$0.347

240

-

-

$0.347

$0.347

Micros sp.j. W. Kędra i J. Lic

Poland . 240 parts In-Stock

1+ parts

-

100+ parts

$0.855

1k+ parts

$0.372

10k+ parts

$0.372

240

-

$0.855

$0.372

$0.372

Bristol Electronics

USA . 167 parts In-Stock

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167

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Distributors (Availability)

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Corohmni

South Africa . 51 parts In-Stock

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$0.204

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51

$0.204

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Semicontronic

India . 8,553 parts In-Stock

1+ parts

$0.221

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$0.215

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$0.214

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8,553

$0.221

$0.215

$0.214

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Argo Parts USA

USA . 1,911 parts In-Stock

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$0.296

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$0.287

1,911

$0.296

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$0.287

Corphita

USA . 437 parts In-Stock

1+ parts

$0.297

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437

$0.297

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$0.319

100+ parts

$0.303

1k+ parts

$0.288

10k+ parts

$0.284

100

$0.319

$0.303

$0.288

$0.284

Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$0.330

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$0.313

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$0.313

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300

$0.330

$0.313

$0.313

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Modulus Dynamics

Lithuania . 15 parts In-Stock

1+ parts

$0.354

100+ parts

$0.351

1k+ parts

$0.340

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15

$0.354

$0.351

$0.340

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Ampacity Inc.

Singapore . 8,176 parts In-Stock

1+ parts

$0.481

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8,176

$0.481

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Continental Prestige Electronics

USA . 405 parts In-Stock

1+ parts

$0.694

100+ parts

$0.411

1k+ parts

$0.236

10k+ parts

$0.216

405

$0.694

$0.411

$0.236

$0.216

Aztec Data Supply Inc.

USA . 3,640 parts In-Stock

1+ parts

$1.686

100+ parts

-

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3,640

$1.686

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Microchip USA

USA . 2,238 parts In-Stock

1+ parts

$4.680

100+ parts

$4.650

1k+ parts

$4.640

10k+ parts

$4.620

2,238

$4.680

$4.650

$4.640

$4.620

Perfect Parts

USA . 38,539 parts In-Stock

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38,539

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Metaverse IC Inc.

Canada . 20,887 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,624 parts In-Stock

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13,624

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SupplyDigital Components

Austria . 6,834 parts In-Stock

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6,834

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TANS Electronics

Latvia . 6,261 parts In-Stock

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6,261

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Problanco Electronics

Mexico . 5,026 parts In-Stock

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Kulean Microsystems

USA . 4,683 parts In-Stock

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4,683

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Kepictronics

USA . 3,840 parts In-Stock

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3,840

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Supply Digital

USA . 2,417 parts In-Stock

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2,417

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GreenTree Electronics

Israel . 1,920 parts In-Stock

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1,920

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Allen Electronics Distributors

USA . 1,220 parts In-Stock

1+ parts

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100+ parts

$0.472

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1,220

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$0.472

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UHIMA Technologies

Türkiye . 954 parts In-Stock

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954

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Overview

Experience superior performance and reliability with the BD14016STU by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers outstanding quality and craftsmanship. The BD14016STU falls under the category of Power Bipolar Junction Transistors (BJT), making it ideal for switching applications. With its sleek rectangular shape and through-hole terminal form, installation is a breeze. Offering a maximum collector-emitter voltage of 80V and a maximum power dissipation of 12.5W, this transistor guarantees exceptional power handling capabilities. The BD14016STU also boasts a minimum DC current gain of 100, ensuring efficient operation. Don't miss out on the value, benefits, and advantages that this product brings to your projects. Choose the BD14016STU and experience excellence in performance every time.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Polarity or Channel Type

PNP - The PNP polarity allows for easy integration and compatibility with existing circuitry setups.

Configuration

SINGLE - The single configuration simplifies the design and reduces complexity, making it easier to implement in circuits.

Transistor Application

SWITCHING - Designed specifically for switching applications, this transistor ensures efficient and reliable operation in high-speed switching circuits.

Package Shape

RECTANGULAR - The rectangular shape of the package provides convenient mounting and installation options.

Terminal Form

THROUGH-HOLE - The through-hole terminal form allows for secure and stable connections, improving overall reliability.

No. of Elements

1 - With a single element, this transistor is straightforward to use and ensures uncomplicated circuit integration.

No. of Terminals

3 - The three terminals offer flexible connectivity options and allow for efficient signal transfer.

Maximum Power Dissipation (Abs)

12.5 W - With a high maximum power dissipation, this transistor can handle demanding applications and provide stable performance.

Package Style (Meter)

FLANGE MOUNT - The flange mount package style offers easy installation and secure mounting, suitable for various setups.

Minimum DC Current Gain (hFE)

100 - The minimum DC current gain of 100 ensures consistent amplification and signal integrity in circuits.

Maximum Operating Temperature

150 °C - With a high maximum operating temperature, this transistor can withstand harsh operating conditions without sacrificing performance.

Maximum Collector-Emitter Voltage

80 V - The high maximum collector-emitter voltage ensures compatibility with a wide range of circuits and applications.

Transistor Element Material

SILICON - The use of silicon as the element material ensures excellent performance and reliability.

Maximum Collector Current (IC)

1.5 A - The high maximum collector current facilitates the handling of significant current loads, making it suitable for various power applications.

Terminal Finish

MATTE TIN - The matte tin terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position

SINGLE - The single terminal position simplifies circuit connections and enables easy integration into existing designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD14016STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD14016STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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