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TIP127TU

Onsemi

TIP127TU by Onsemi

TIP127TU by Onsemi is a PNP power BJT with 100V VCEO, 5A IC, and 65W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating up to 150°C, this transistor has hFE of at least 1000 for efficient performance.

Median Price

$0.599

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 270 parts In-Stock

1+ parts

$0.599

100+ parts

$0.569

1k+ parts

$0.569

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-

270

$0.599

$0.569

$0.569

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.484

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300

$0.484

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Digiode

USA . 2,850 parts In-Stock

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$0.569

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2,850

$0.569

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Vyrian

USA . 4,172 parts In-Stock

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ComSIT Distribution GmbH

Germany . 849 parts In-Stock

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849

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Beckwith Electronics

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50

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Distributors (Availability)

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Argo Parts USA

USA . 1,359 parts In-Stock

1+ parts

$0.351

100+ parts

-

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$0.340

1,359

$0.351

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-

$0.340

Continental Prestige Electronics

USA . 818 parts In-Stock

1+ parts

$0.351

100+ parts

-

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$0.344

818

$0.351

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$0.344

Corohmni

South Africa . 86 parts In-Stock

1+ parts

$0.474

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86

$0.474

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Netroflash

USA . 500 parts In-Stock

1+ parts

$0.484

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500

$0.484

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Ampacity Inc.

Singapore . 270 parts In-Stock

1+ parts

$0.510

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270

$0.510

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Semicontronic

India . 270 parts In-Stock

1+ parts

$0.510

100+ parts

$0.497

1k+ parts

$0.495

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270

$0.510

$0.497

$0.495

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Corphita

USA . 3,099 parts In-Stock

1+ parts

$0.539

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3,099

$0.539

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.599

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$0.569

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$0.569

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270

$0.599

$0.569

$0.569

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Aztec Data Supply Inc.

USA . 842 parts In-Stock

1+ parts

$1.328

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842

$1.328

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AZTECH Wire

Italy . 515 parts In-Stock

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$12.784

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515

$12.784

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GreenTree Electronics

Israel . 18,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,406 parts In-Stock

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Problanco Electronics

Mexico . 6,046 parts In-Stock

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Microchip USA

USA . 5,686 parts In-Stock

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TANS Electronics

Latvia . 5,478 parts In-Stock

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SupplyDigital Components

Austria . 5,446 parts In-Stock

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Kulean Microsystems

USA . 4,284 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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Supply Digital

USA . 1,613 parts In-Stock

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Kepictronics

USA . 1,440 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 854 parts In-Stock

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854

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Robosynatics

Brazil . 745 parts In-Stock

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$1.896

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$1.896

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$1.896

745

-

$1.896

$1.896

$1.896

Lucentia Tech

USA . 745 parts In-Stock

1+ parts

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100+ parts

$1.896

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$1.896

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$1.896

745

-

$1.896

$1.896

$1.896

Metaverse IC Inc.

Canada . 608 parts In-Stock

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608

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Overview

Unleash the power of innovation with the TIP127TU by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that excel in switching applications. The TIP127TU features a PNP configuration with a built-in diode and resistor, offering customers a versatile solution for their electronic projects. With a maximum power dissipation of 65W and a high DC current gain of 1000, this transistor ensures reliable performance and efficiency. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits, making this product ideal for applications that require switching functionalities.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor add versatility to the transistor's functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration and mounting in electronic circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, enhancing the reliability of the transistor in various setups.

Maximum Power Dissipation (Abs): 65 W

With a high power dissipation capacity, this transistor can handle demanding applications without overheating or failing.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers stability and ease of installation in different equipment and systems.

Minimum DC Current Gain (hFE): 1000

The high minimum DC current gain ensures consistent and reliable performance in amplification and switching circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to function reliably in environments with elevated temperatures.

Maximum Collector-Emitter Voltage: 100 V

Supports a high maximum collector-emitter voltage, enabling the transistor to handle higher voltage levels in circuitry.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its stable characteristics, offering reliability and performance in electronic devices.

Maximum Collector Current (IC): 5 A

The high maximum collector current rating allows the transistor to handle significant current flows in various applications.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and solderability for secure electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures proper alignment in circuit layouts.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP127TU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TIP127TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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