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JANTXV2N3055

Microchip Technology

JANTXV2N3055 by Microchip Technology

JANTXV2N3055 by Microchip Tech is a NPN BJT with 115W power dissipation, 70V max collector-emitter voltage, and 15A max collector current. Ideal for high-power applications in military electronics due to MIL-19500/407D standard compliance and flange mount package style.

Median Price

$70.550

Lifecycle Status

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5

In-Stock Inventory

1k+

JANTXV2N3055 by Microchip Technology
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Microchip Technology

USA . 685 parts In-Stock

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$70.550

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685

$70.550

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$68.539

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100

$68.539

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$229.430

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1

$229.430

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Vyrian

USA . 501 parts In-Stock

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501

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NexGen Digital

USA . 32 parts In-Stock

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32

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,507 parts In-Stock

1+ parts

$1.577

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1,507

$1.577

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AZTECH Wire

Italy . 826 parts In-Stock

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$10.414

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826

$10.414

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Semicontronic

India . 715 parts In-Stock

1+ parts

$45.050

100+ parts

$43.924

1k+ parts

$43.698

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715

$45.050

$43.924

$43.698

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Aranea Global

USA . 100 parts In-Stock

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$67.168

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$64.481

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100

$67.168

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$64.481

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Modulus Dynamics

Lithuania . 700 parts In-Stock

1+ parts

$67.990

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$67.310

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$65.270

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700

$67.990

$67.310

$65.270

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Continental Prestige Electronics

USA . 3,860 parts In-Stock

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$68.539

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$67.168

3,860

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$67.168

Corohmni

South Africa . 52 parts In-Stock

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$91.160

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52

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$93.895

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$89.200

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$89.200

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500

$93.895

$89.200

$89.200

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QUARKTWIN TECHNOLOGY LTD

USA . 17,173 parts In-Stock

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Microchip USA

USA . 6,125 parts In-Stock

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Argo Parts USA

USA . 4,916 parts In-Stock

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Fulton Briggs Corp.

USA . 2,731 parts In-Stock

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2,731

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Overview

Experience the superior quality and reliability of the JANTXV2N3055 by Microchip Technology, a trusted leader in electronic components. This Power Bipolar Junction Transistor (BJT) offers exceptional performance and efficiency for a wide range of applications. With a maximum power dissipation of 115W and a maximum collector current of 15A, this NPN transistor is perfect for high-power circuits. Trust Microchip Technology to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity, ensuring efficient heat dissipation and enhancing the overall reliability and performance of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this product suitable for a wide range of audio and signal processing circuits.

Maximum Power Dissipation (Abs): 115 W

With a high power dissipation capability, this transistor can handle high power loads without the risk of overheating or damage.

Maximum Collector-Emitter Voltage: 70 V

The high collector-emitter voltage rating allows for the transistor to be used in circuits with higher voltage requirements, increasing its versatility.

Nominal Transition Frequency (fT): 2.5 MHz

The high transition frequency enables this transistor to operate at higher frequencies, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) JANTXV2N3055 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

70 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Qualified

Reference Standard:

MIL-19500/407D

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

JANTXV2N3055 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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