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JANTX2N3055

Microchip Technology

JANTX2N3055 by Microchip Technology

JANTX2N3055 by Microchip Tech is a NPN BJT transistor with max 70V VCE, 15A IC, and hFE of min 20. Ideal for switching applications in MIL-19500/407D standard, it has a metal package body and operates up to 200°C.

Median Price

$50.230

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Avnet

USA . 16 parts In-Stock

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$44.480

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TTI

USA . 80 parts In-Stock

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$55.980

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$55.980

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Nova Conductors

Japan . 550 parts In-Stock

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$54.273

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$54.273

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TEDSS.com

USA . 161 parts In-Stock

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$61.940

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Freelance Electronics

USA . 1 parts In-Stock

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$68.228

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American Microsemiconductor Inc.

USA . 246 parts In-Stock

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Vyrian

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R&J Components

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NexGen Digital

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Electronic Expediters

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Q Components

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Quantum Digital Technology

USA . 19 parts In-Stock

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Component Electronics Inc.

Canada . 14 parts In-Stock

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Odi Ramu Company

Canada . 5 parts In-Stock

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PC Components Company LLC

USA . 3 parts In-Stock

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Sunrise Surplus Inc.

USA . 3 parts In-Stock

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Bristol Electronics

USA . 3 parts In-Stock

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Cyclops Electronics Ltd

UK . 3 parts In-Stock

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MISTER SPROCKETS

USA . 2 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,077 parts In-Stock

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$0.997

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$0.997

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Corohmni

South Africa . 175 parts In-Stock

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$1.729

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$1.729

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.759

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$1.671

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$1.671

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$1.759

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$1.671

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AZTECH Wire

Italy . 382 parts In-Stock

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$6.889

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Semicontronic

India . 62 parts In-Stock

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$43.230

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$42.149

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$41.933

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$43.230

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$41.933

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Continental Prestige Electronics

USA . 1,864 parts In-Stock

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$49.130

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$48.147

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Component Stockers USA

USA . 90 parts In-Stock

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$50.410

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Modulus Dynamics

Lithuania . 700 parts In-Stock

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$53.931

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$53.392

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$51.774

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$53.931

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Authorized Procurement Solutions

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Fulton Briggs Corp.

USA . 5,397 parts In-Stock

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Argo Parts USA

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Microchip USA

USA . 4,163 parts In-Stock

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Perfect Parts

USA . 2,783 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$53.188

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$51.560

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$50.474

500

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$53.188

$51.560

$50.474

Assy Fe

Spain . 8 parts In-Stock

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Overview

Discover the power and reliability of the JANTX2N3055 by Microchip Technology, a leading manufacturer in the industry. This high-quality Power Bipolar Junction Transistor is perfect for switching applications, offering customers a durable and efficient solution for their electronic needs. With a maximum collector current of 15A and a maximum operating temperature of 200°C, this NPN transistor provides exceptional performance in a variety of scenarios. Trust in Microchip Technology to deliver superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: METAL

The metal body provides excellent heat dissipation, making this transistor ideal for high-power switching applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronics due to their versatile nature and ability to amplify signals effectively.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy integration into various electronic devices.

Transistor Application: SWITCHING

This transistor is specifically designed for switching applications, offering fast and reliable switching performance.

Package Shape: ROUND

The round shape allows for compact and efficient layout on circuit boards, saving valuable space in electronic systems.

Terminal Form: PIN/PEG

The pin/peg terminal form provides a secure and reliable connection, ensuring stable operation in various environments.

No. of Terminals: 2

With 2 terminals, this transistor is easy to install and connect in circuits, making it user-friendly for electronics enthusiasts.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mechanical mounting and ensures stability in high-vibration environments.

Minimum DC Current Gain (hFE): 20

The minimum DC current gain of 20 ensures consistent and reliable amplification of current in electronic circuits.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor is suitable for use in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 70 V

The maximum collector-emitter voltage of 70V allows for safe operation in high-voltage circuits without risking damage to the transistor.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability in electronic applications.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this transistor can handle high power loads, making it suitable for heavy-duty applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability in electronic systems.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and allows for easy soldering, making installation quick and convenient.

Case Connection: COLLECTOR

The case connection to the collector provides a secure and stable electrical connection, improving the overall performance of the transistor.

Reference Standard: MIL-19500/407D

Compliant with MIL-19500/407D standards, this transistor meets stringent quality requirements, ensuring a high level of performance and reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) JANTX2N3055 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

70 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Qualified

Reference Standard:

MIL-19500/407D

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JANTX2N3055 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-00-147-7289, 5961001477289, 5961-01-187-8836, 5961011878836

NIIN

001477289, 011878836

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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