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BUT30V

STMicroelectronics

BUT30V by STMicroelectronics

STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.

Median Price

$36.867

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$36.867

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10

$36.867

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Vyrian

USA . 4,247 parts In-Stock

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4,247

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Digiode

USA . 3,043 parts In-Stock

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3,043

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Anansix

USA . 1,333 parts In-Stock

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1,333

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VNN

France . 620 parts In-Stock

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620

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Chip Stock

USA . 135 parts In-Stock

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135

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 16,069 parts In-Stock

1+ parts

$0.567

100+ parts

$0.567

1k+ parts

$0.567

10k+ parts

-

16,069

$0.567

$0.567

$0.567

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Aztec Data Supply Inc.

USA . 4,701 parts In-Stock

1+ parts

$0.650

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4,701

$0.650

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Corohmni

South Africa . 108 parts In-Stock

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$0.877

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108

$0.877

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IDEA Electronic Components Group

UK . 1,203 parts In-Stock

1+ parts

$1.743

100+ parts

-

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$1.569

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1,203

$1.743

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$1.569

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MKK Technologies

India . 712 parts In-Stock

1+ parts

$3.278

100+ parts

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712

$3.278

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DigiPath Technology Company

USA . 712 parts In-Stock

1+ parts

$3.278

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712

$3.278

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AZTECH Wire

Italy . 614 parts In-Stock

1+ parts

$13.488

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614

$13.488

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Semicontronic

India . 1,123 parts In-Stock

1+ parts

$32.050

100+ parts

$31.249

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$31.088

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1,123

$32.050

$31.249

$31.088

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$36.130

100+ parts

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$34.684

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2,000

$36.130

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$34.684

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$36.644

100+ parts

$33.713

1k+ parts

$31.590

10k+ parts

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2,500

$36.644

$33.713

$31.590

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Continental Prestige Electronics

USA . 3,317 parts In-Stock

1+ parts

$36.867

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$36.130

3,317

$36.867

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$36.130

Ampacity Inc.

Singapore . 940 parts In-Stock

1+ parts

$55.050

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940

$55.050

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Lixinc

USA . 3,469 parts In-Stock

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3,469

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 1,880 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Parana Technologies

USA . 1,528 parts In-Stock

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$2.084

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1,528

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$2.084

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Perfect Parts

USA . 560 parts In-Stock

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560

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Argo Parts USA

USA . 318 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

1+ parts

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100+ parts

$18.821

1k+ parts

$18.821

10k+ parts

$18.821

100

-

$18.821

$18.821

$18.821

Overview

Upgrade your electronic projects with the BUT30V from STMicroelectronics, a leading manufacturer known for its high-quality components. This NPN Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum VCEsat of 0.9V and a maximum power dissipation of 250W. With a maximum collector current of 100A and a fast fall time of 200ns, this transistor delivers reliable performance in a compact rectangular package. Trust STMicroelectronics to provide you with top-notch components that enhance the efficiency and effectiveness of your designs.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in low-current switching applications, making this transistor suitable for various electronic switching circuits.

Maximum VCEsat: 0.9 V

Low VCEsat voltage means the transistor can operate with minimal power loss in the saturation region, leading to efficient performance in switching applications.

Maximum Power Dissipation: 250 W

With a high power dissipation capability, this transistor can handle large amounts of power without getting damaged, making it reliable for high-power applications.

Maximum Collector Current (IC): 100 A

The high collector current rating allows this transistor to handle large currents, making it suitable for high-power switching applications.

Maximum Operating Temperature: 150 °C

The high operating temperature rating ensures the transistor can operate reliably in a wide range of temperature environments, making it suitable for various industrial and automotive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT30V attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Maximum Fall Time (tf):

200 ns

JESD-30 Code:

R-XUFM-X3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

250 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2200 ns

Maximum VCEsat:

.9 V

Trade Compliance

BUT30V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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