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BUT34

Onsemi

BUT34 by Onsemi

BUT34 by Onsemi is a NPN BJT with a max VCE of 500V and IC of 50A. It features a min hFE of 15, making it ideal for switching applications. The transistor comes in a round package style with flange mount and bottom terminal position.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Digiode

USA . 1,094 parts In-Stock

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Vyrian

USA . 675 parts In-Stock

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675

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Rebound Electronics

UK . 32 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 24 parts In-Stock

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Kulean Microsystems

USA . 6,245 parts In-Stock

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Problanco Electronics

Mexico . 5,937 parts In-Stock

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Northwest PG Solutions

USA . 1,804 parts In-Stock

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TANS Electronics

Latvia . 1,044 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Native Components

USA . 901 parts In-Stock

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SupplyDigital Components

Austria . 832 parts In-Stock

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UHIMA Technologies

Türkiye . 627 parts In-Stock

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Corphita

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Perfect Parts

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Corohmni

South Africa . 52 parts In-Stock

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Overview

Enhance your power control solutions with the BUT34 by Onsemi, a high-quality Power BJT transistor designed for switching applications. With a robust construction and built-in diode and resistor, this NPN Darlington transistor offers superior performance and reliability. Ideal for industrial automation, motor control, and power supplies, the BUT34 ensures efficient operation and precise control. Experience the value and benefits of Onsemi's advanced technology in power electronics with the BUT34 transistor. Elevate your projects with this powerhouse component!

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent heat dissipation, ensuring reliable performance even under high power operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance characteristics.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration with built-in diode and resistor simplifies circuit design and reduces component count, making it easier to integrate into applications.

Transistor Application: SWITCHING

Designed for switching applications, offering high efficiency and fast switching speeds.

Package Shape: ROUND

Round package shape allows for easy mounting and installation, making it suitable for a wide range of applications.

No. of Terminals: 2

With 2 terminals, this bipolar junction transistor (BJT) is easy to use and integrate into circuits.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures stability and consistent performance in different operating conditions.

Maximum Collector-Emitter Voltage: 500 V

With a high maximum collector-emitter voltage of 500 V, this BJT can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability, making this transistor a durable choice for various applications.

Maximum Collector Current (IC): 50 A

With a maximum collector current of 50 A, this transistor can handle high current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, making it easy to connect the transistor in circuits.

Terminal Position: BOTTOM

Bottom terminal position makes it convenient to mount and connect the transistor in different circuit configurations.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation, ensuring stable performance even under high power operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT34 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

500 V

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-204AE

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT34 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-302-3925, 5961013023925

NIIN

013023925

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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