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BUT32V

STMicroelectronics

BUT32V by STMicroelectronics

STMicroelectronics' BUT32V is an NPN BJT transistor for switching applications. It has a max VCEsat of 0.9V, IC of 80A, and Pdiss of 250W. Ideal for high-power switching circuits in various electronic devices.

Median Price

$17.860

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

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$17.860

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100

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Digiode

USA . 4,154 parts In-Stock

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Anansix

USA . 2,498 parts In-Stock

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2,498

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VNN

France . 350 parts In-Stock

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350

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Vyrian

USA . 222 parts In-Stock

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222

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ComSIT Distribution GmbH

Germany . 64 parts In-Stock

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Holdelec - ElecDif-Pro

France . 15 parts In-Stock

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ECAB

Sweden . 11 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,308 parts In-Stock

1+ parts

$1.152

100+ parts

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$1.037

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$1.152

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$1.037

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MKK Technologies

India . 264 parts In-Stock

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$2.166

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264

$2.166

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DigiPath Technology Company

USA . 264 parts In-Stock

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$2.166

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264

$2.166

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AZTECH Wire

Italy . 326 parts In-Stock

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$8.348

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Aranea Global

USA . 100 parts In-Stock

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$17.503

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$16.803

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$17.503

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$16.803

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Continental Prestige Electronics

USA . 6,190 parts In-Stock

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$17.860

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$17.503

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$17.860

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$17.503

Ampacity Inc.

Singapore . 952 parts In-Stock

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$34.050

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$34.050

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Corphita

USA . 3,506 parts In-Stock

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Parana Technologies

USA . 1,507 parts In-Stock

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$1.377

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Argo Parts USA

USA . 1,432 parts In-Stock

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Overview

Upgrade your power systems with the STMicroelectronics BUT32V NPN Power BJT. Manufactured by industry leader STMicroelectronics, this single-channel switching transistor offers unparalleled quality and reliability. Ideal for a variety of applications, this transistor provides a maximum collector-emitter voltage of 300V and a maximum collector current of 80A, ensuring optimal performance in any power system. Trust STMicroelectronics to deliver the highest value and benefits with the BUT32V, providing customers with the advantages they need to succeed.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic applications, making this product compatible with a wide range of circuits.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuit designs without the need for complex connections.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in fast switching circuits.

Maximum VCEsat: 0.9 V

Low VCEsat value indicates low saturation voltage, leading to reduced power loss and improved efficiency.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement on circuit boards.

Maximum Fall Time (tf): 400 ns

Fast fall time ensures quick response in switching operations, enhancing overall performance.

Maximum Power Dissipation (Abs): 250 W

High power dissipation capability allows for reliable operation in high power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical strength and secure mounting options.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance even in demanding thermal conditions.

Maximum Collector-Emitter Voltage: 300 V

High collector-emitter voltage rating allows for use in various voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic components.

Maximum Collector Current (IC): 80 A

High collector current rating enables the transistor to handle large current loads with ease.

Terminal Position: UPPER

Upper terminal position facilitates easy connections and reduces the risk of short circuits.

Case Connection: ISOLATED

Isolated case connection ensures safety and prevents electrical interference in circuit applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT32V attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Maximum Fall Time (tf):

400 ns

JESD-30 Code:

R-XUFM-X3

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

250 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Power

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.9 V

Trade Compliance

BUT32V Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-14-469-6191, 5961144696191

NIIN

144696191

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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