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TIP127G

Onsemi

TIP127G by Onsemi

TIP127G by Onsemi is a PNP Power BJT with 100V VCEO, 5A IC, and 65W Ptot. It features a Darlington configuration for amplifier applications. The transistor has a min hFE of 1000 and operates up to 150°C, making it suitable for high-power amplification needs.

Median Price

$1.148

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,905 parts In-Stock

1+ parts

$0.404

100+ parts

$0.346

1k+ parts

$0.315

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2,905

$0.404

$0.346

$0.315

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RS (Exports)

UK . 355 parts In-Stock

1+ parts

$0.906

100+ parts

$0.634

1k+ parts

$0.621

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355

$0.906

$0.634

$0.621

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Chip1Stop

Japan . 529 parts In-Stock

1+ parts

$1.390

100+ parts

$0.454

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529

$1.390

$0.454

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Mouser Electronics

USA . 9,590 parts In-Stock

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$1.550

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$0.580

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$0.531

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9,590

$1.550

$0.580

$0.531

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Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$1.883

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$1.789

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$1.789

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2,500

$1.883

$1.789

$1.789

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DigiKey

USA . 3,454 parts In-Stock

1+ parts

$1.980

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$0.852

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$0.619

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$0.517

3,454

$1.980

$0.852

$0.619

$0.517

Master Electronics

USA . 4,050 parts In-Stock

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-

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$0.382

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$0.345

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$0.314

4,050

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$0.382

$0.345

$0.314

Verical

USA . 1,450 parts In-Stock

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$0.457

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$0.354

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1,450

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$0.457

$0.354

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Flip Electronics (Authorized)

USA . 1,009 parts In-Stock

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Avnet

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

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$0.618

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500

$0.618

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Digiode

USA . 2,320 parts In-Stock

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$0.751

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2,320

$0.751

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TME

Poland . 200 parts In-Stock

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$0.930

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$0.491

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$0.470

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200

$0.930

$0.491

$0.470

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Maritex

Poland . 680 parts In-Stock

1+ parts

$1.387

100+ parts

$0.733

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$0.572

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680

$1.387

$0.733

$0.572

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IBS Electronics

USA . 9,650 parts In-Stock

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$0.498

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$0.428

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$0.477

9,650

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$0.498

$0.428

$0.477

NAC Semi

USA . 6,450 parts In-Stock

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$0.515

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$0.475

6,450

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$0.515

$0.475

Chip Stock

USA . 4,900 parts In-Stock

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Vyrian

USA . 2,558 parts In-Stock

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2,558

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Flip Electronics

USA . 1,009 parts In-Stock

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Bristol Electronics

USA . 212 parts In-Stock

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Atlantic Semiconductor

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Prism Electronics

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QIE Inc.

USA . 55 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 28 parts In-Stock

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Inventory MP

USA . 12 parts In-Stock

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Beckwith Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,343 parts In-Stock

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$0.327

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2,343

$0.327

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Decca Corp

Germany . 2,057 parts In-Stock

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$0.356

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$0.349

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$0.345

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2,057

$0.356

$0.349

$0.345

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Semicontronic

India . 2,190 parts In-Stock

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$0.357

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$0.348

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$0.346

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2,190

$0.357

$0.348

$0.346

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Corohmni

South Africa . 358 parts In-Stock

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$0.377

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358

$0.377

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Argo Parts USA

USA . 4,655 parts In-Stock

1+ parts

$0.424

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$0.411

4,655

$0.424

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$0.411

Continental Prestige Electronics

USA . 1,214 parts In-Stock

1+ parts

$0.424

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$0.416

1,214

$0.424

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$0.416

Aztec Data Supply Inc.

USA . 1,135 parts In-Stock

1+ parts

$0.489

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1,135

$0.489

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Corphita

USA . 933 parts In-Stock

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$0.712

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933

$0.712

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Modulus Dynamics

Lithuania . 7,953 parts In-Stock

1+ parts

$1.022

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$1.022

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$1.022

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7,953

$1.022

$1.022

$1.022

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.883

100+ parts

$1.789

1k+ parts

$1.789

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2,500

$1.883

$1.789

$1.789

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Perfect Parts

USA . 19,505 parts In-Stock

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Metaverse IC Inc.

Canada . 17,800 parts In-Stock

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Lixinc

USA . 15,756 parts In-Stock

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Problanco Electronics

Mexico . 7,729 parts In-Stock

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Kulean Microsystems

USA . 5,979 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Robosynatics

Brazil . 3,780 parts In-Stock

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$1.330

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$1.303

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$1.303

3,780

-

$1.330

$1.303

$1.303

Lucentia Tech

USA . 3,780 parts In-Stock

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$1.330

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$1.303

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$1.303

3,780

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$1.330

$1.303

$1.303

Standard Data Resources (Excess)

USA . 3,326 parts In-Stock

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TANS Electronics

Latvia . 2,677 parts In-Stock

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Glotronic Ltd.

UK . 2,153 parts In-Stock

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GreenTree Electronics

Israel . 1,200 parts In-Stock

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Eastek

USA . 1,150 parts In-Stock

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UHIMA Technologies

Türkiye . 930 parts In-Stock

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930

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iodParts Technologies Inc.

India . 450 parts In-Stock

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Authorized Procurement Solutions

USA . 400 parts In-Stock

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SupplyDigital Components

Austria . 124 parts In-Stock

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124

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Allen Electronics Distributors

USA . 50 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 28 parts In-Stock

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28

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Overview

Discover the power and reliability of the TIP127G by Onsemi, a top-quality Power Bipolar Junction Transistor (BJT) designed to amplify with precision. With a maximum collector current of 5A and a built-in diode and resistor, this Darlington transistor is ideal for a wide range of applications. Trust in the expertise of Onsemi to deliver exceptional performance and durability. Elevate your projects with the TIP127G and experience the value of top-notch quality and efficiency in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor component inside, ensuring long-lasting performance.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Saves space and simplifies circuit design by including necessary components in one package.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in amplifier circuits.

Maximum Power Dissipation (Abs): 65 W

Can handle high power levels without overheating, making it suitable for various applications.

Maximum Collector-Emitter Voltage: 100 V

Provides a high voltage rating, allowing for use in applications with higher voltage requirements.

Nominal Transition Frequency (fT): 4 MHz

Offers high-frequency capabilities, suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP127G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP127G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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