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BD13910STU

Onsemi

BD13910STU by Onsemi

BD13910STU by Onsemi is a NPN BJT transistor with 80V VCEO and 1.5A IC, ideal for switching applications. With a hFE of 63 and 13W Ptot, it operates up to 150°C making it suitable for high-power tasks in various electronic circuits. The package style is flange mount with through-hole terminals, offering ease of installation.

Median Price

$0.302

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 3,040 parts In-Stock

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$0.210

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$0.162

3,040

$0.210

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$0.162

Adafruit Industries

USA . 900 parts In-Stock

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$0.308

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$0.293

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$0.293

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900

$0.308

$0.293

$0.293

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Farnell

UK . 821 parts In-Stock

1+ parts

$0.796

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$0.326

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$0.252

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821

$0.796

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$0.252

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DigiKey

USA . 20 parts In-Stock

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$1.130

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$1.130

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Element14

Singapore . 821 parts In-Stock

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$1.540

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$0.629

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$0.402

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$0.363

821

$1.540

$0.629

$0.402

$0.363

Master Electronics

USA . 3,730 parts In-Stock

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$0.262

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$0.250

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$0.222

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$0.262

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Rochester

USA . 2,638 parts In-Stock

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$0.297

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$0.246

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$0.220

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$0.297

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Verical

USA . 2,638 parts In-Stock

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$0.274

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EBV Elektronik

Germany . 1,920 parts In-Stock

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Flip Electronics (Authorized)

USA . 1,507 parts In-Stock

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Chip1Stop

Japan . 350 parts In-Stock

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$0.265

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$0.236

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$0.227

350

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$0.227

RS (Exports)

UK . 40 parts In-Stock

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$2.006

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$2.006

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Distributors (In-Stock)

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Digiode

USA . 2,152 parts In-Stock

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$0.231

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Nova Conductors

Japan . 150 parts In-Stock

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$0.290

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$0.290

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Bristol Electronics

USA . 60 parts In-Stock

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$0.563

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$0.225

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60

$0.563

$0.225

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TME

Poland . 641 parts In-Stock

1+ parts

$1.049

100+ parts

$0.405

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$0.335

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641

$1.049

$0.405

$0.335

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Chip Stock

USA . 10,864 parts In-Stock

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Cyclops Electronics Ltd

UK . 9,364 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,275 parts In-Stock

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IBS Electronics

USA . 3,730 parts In-Stock

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$0.340

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$0.326

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$0.288

3,730

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$0.340

$0.326

$0.288

VNN

France . 2,350 parts In-Stock

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Vyrian

USA . 2,259 parts In-Stock

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Flip Electronics

USA . 1,507 parts In-Stock

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DigiKey Marketplace

USA . 1,507 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 241 parts In-Stock

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Microfarads

USA . 57 parts In-Stock

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ABC Electronics Ltd.

UK . 12 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,227 parts In-Stock

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$0.172

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$0.172

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Semicontronic

India . 1,994 parts In-Stock

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$0.172

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$0.168

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$0.167

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$0.172

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Corphita

USA . 2,394 parts In-Stock

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$0.219

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Corohmni

South Africa . 273 parts In-Stock

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$0.243

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Continental Prestige Electronics

USA . 3,311 parts In-Stock

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$0.289

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$0.283

3,311

$0.289

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$0.283

Argo Parts USA

USA . 2,189 parts In-Stock

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$0.289

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$0.280

2,189

$0.289

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$0.280

Advanced Electronics

New Zealand . 900 parts In-Stock

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$0.308

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$0.293

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$0.293

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900

$0.308

$0.293

$0.293

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Aztec Data Supply Inc.

USA . 3,898 parts In-Stock

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$0.610

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3,898

$0.610

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Andel Nordic

Denmark . 107 parts In-Stock

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$1.240

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$0.869

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$0.869

107

$1.240

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$0.869

$0.869

Metaverse IC Inc.

Canada . 40,928 parts In-Stock

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ChipstoGo Electronic ltd

UK . 9,389 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 8,352 parts In-Stock

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Perfect Parts

USA . 5,797 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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SupplyDigital Components

Austria . 3,826 parts In-Stock

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TANS Electronics

Latvia . 3,403 parts In-Stock

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Authorized Procurement Solutions

USA . 2,840 parts In-Stock

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Kulean Microsystems

USA . 2,483 parts In-Stock

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Problanco Electronics

Mexico . 1,450 parts In-Stock

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iodParts Technologies Inc.

India . 1,020 parts In-Stock

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Supply Digital

USA . 887 parts In-Stock

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UHIMA Technologies

Türkiye . 543 parts In-Stock

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543

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Allen Electronics Distributors

USA . 220 parts In-Stock

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$0.543

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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Overview

Unleash the power of innovation with the BD13910STU from Onsemi. As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) that are perfect for a wide range of applications. Whether you're looking for high-performance switching capabilities or reliable operation, this NPN transistor has got you covered. With a maximum power dissipation of 13W and a maximum collector-emitter voltage of 80V, the BD13910STU offers unmatched value and performance. Trust in Onsemi to provide you with the solutions you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making it ideal for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching, making this product versatile.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making this transistor easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and space-saving in circuit layouts.

Terminal Form: THROUGH-HOLE

The through-hole terminals ensure secure connections and ease of soldering.

No. of Terminals: 3

With 3 terminals, this transistor offers flexible connectivity options for various circuit configurations.

Maximum Power Dissipation (Abs): 13 W

The high power dissipation capability makes this transistor suitable for handling heavy loads.

Package Style (Meter): FLANGE MOUNT

The flange mount design aids in heat dissipation and adds mechanical stability to the package.

Minimum DC Current Gain (hFE): 63

A minimum DC current gain of 63 ensures reliable and consistent performance in amplification tasks.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand tough environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating makes this transistor suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high efficiency and performance, making this transistor a reliable choice for various tasks.

Maximum Collector Current (IC): 1.5 A

With a maximum collector current of 1.5 A, this transistor can handle moderate to high currents with ease.

Terminal Finish: MATTE TIN

The matte tin finish provides excellent conductivity and solderability for secure connections.

Terminal Position: SINGLE

The single terminal position simplifies wiring and ensures proper orientation during installation.

Nominal Transition Frequency (fT): 250 MHz

The high transition frequency enables fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD13910STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD13910STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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