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MJ11015G

Onsemi

MJ11015G by Onsemi

MJ11015G by Onsemi is a PNP power BJT with 200W power dissipation, 120V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a round package with flange mount style.

Median Price

$6.560

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 997 parts In-Stock

1+ parts

$6.560

100+ parts

$3.810

1k+ parts

$3.730

10k+ parts

-

997

$6.560

$3.810

$3.730

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Newark

USA . 97 parts In-Stock

1+ parts

$7.660

100+ parts

$4.490

1k+ parts

-

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97

$7.660

$4.490

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Mouser Electronics

USA . 427 parts In-Stock

1+ parts

$8.530

100+ parts

-

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427

$8.530

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DigiKey

USA . 1,408 parts In-Stock

1+ parts

$9.550

100+ parts

$4.862

1k+ parts

$4.329

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1,408

$9.550

$4.862

$4.329

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Element14

Singapore . 997 parts In-Stock

1+ parts

$10.560

100+ parts

$6.140

1k+ parts

$6.020

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997

$10.560

$6.140

$6.020

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Master Electronics

USA . 113 parts In-Stock

1+ parts

-

100+ parts

$4.420

1k+ parts

$4.360

10k+ parts

$4.340

113

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$4.420

$4.360

$4.340

Verical

USA . 110 parts In-Stock

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$5.200

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110

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$5.200

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Rochester

USA . 70 parts In-Stock

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-

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$4.320

1k+ parts

$3.870

10k+ parts

$3.640

70

-

$4.320

$3.870

$3.640

RS (Exports)

UK . 12 parts In-Stock

1+ parts

-

100+ parts

$6.144

1k+ parts

$5.403

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12

-

$6.144

$5.403

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 62 parts In-Stock

1+ parts

$5.340

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-

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62

$5.340

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Digiode

USA . 416 parts In-Stock

1+ parts

$6.982

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416

$6.982

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TME

Poland . 29 parts In-Stock

1+ parts

$8.010

100+ parts

$5.650

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29

$8.010

$5.650

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SOS electronic

Slovakia . 102 parts In-Stock

1+ parts

$9.209

100+ parts

$8.400

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102

$9.209

$8.400

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Chip Stock

USA . 14,820 parts In-Stock

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14,820

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Flip Electronics

USA . 5,200 parts In-Stock

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5,200

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Vyrian

USA . 797 parts In-Stock

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797

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NAC Semi

USA . 300 parts In-Stock

1+ parts

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100+ parts

$10.660

1k+ parts

$9.590

10k+ parts

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300

-

$10.660

$9.590

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IBS Electronics

USA . 138 parts In-Stock

1+ parts

-

100+ parts

$6.395

1k+ parts

$5.905

10k+ parts

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138

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$6.395

$5.905

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LittleDiode

UK . 21 parts In-Stock

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21

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Fibra_Brandt Electronic GMBH

Germany . 18 parts In-Stock

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18

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Holdelec - ElecDif-Pro

France . 14 parts In-Stock

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14

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Huijzer Components

Netherlands . 6 parts In-Stock

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6

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R&J Components

USA . 5 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 20,475 parts In-Stock

1+ parts

$0.459

100+ parts

-

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20,475

$0.459

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Benley Electronics

USA . 1 parts In-Stock

1+ parts

$0.750

100+ parts

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1

$0.750

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Ampacity Inc.

Singapore . 1,080 parts In-Stock

1+ parts

$3.490

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1,080

$3.490

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Semicontronic

India . 1,067 parts In-Stock

1+ parts

$3.490

100+ parts

$3.403

1k+ parts

$3.385

10k+ parts

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1,067

$3.490

$3.403

$3.385

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Corohmni

South Africa . 448 parts In-Stock

1+ parts

$4.560

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448

$4.560

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Component Stockers USA

USA . 5,837 parts In-Stock

1+ parts

$4.850

100+ parts

$4.440

1k+ parts

$4.460

10k+ parts

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5,837

$4.850

$4.440

$4.460

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Netroflash

USA . 50 parts In-Stock

1+ parts

$5.340

100+ parts

$5.233

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-

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50

$5.340

$5.233

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$6.311

100+ parts

$5.995

1k+ parts

$5.995

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500

$6.311

$5.995

$5.995

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Corphita

USA . 1,346 parts In-Stock

1+ parts

$6.615

100+ parts

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1,346

$6.615

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Continental Prestige Electronics

USA . 595 parts In-Stock

1+ parts

$7.820

100+ parts

$5.170

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595

$7.820

$5.170

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Lixinc

USA . 17,543 parts In-Stock

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17,543

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Problanco Electronics

Mexico . 6,504 parts In-Stock

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6,504

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Microchip USA

USA . 5,464 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,293 parts In-Stock

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5,293

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SupplyDigital Components

Austria . 4,445 parts In-Stock

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Argo Parts USA

USA . 4,071 parts In-Stock

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TANS Electronics

Latvia . 3,149 parts In-Stock

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Kepictronics

USA . 3,050 parts In-Stock

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Perfect Parts

USA . 2,808 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Kulean Microsystems

USA . 2,354 parts In-Stock

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UHIMA Technologies

Türkiye . 904 parts In-Stock

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904

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A-Z Elektronik GmbH

Germany . 500 parts In-Stock

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500

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Allen Electronics Distributors

USA . 74 parts In-Stock

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$5.380

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iodParts Technologies Inc.

India . 39 parts In-Stock

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Unleash the power of innovation with the MJ11015G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). The MJ11015G features a Darlington configuration with a built-in diode and resistor, making it ideal for amplifier applications. With a maximum power dissipation of 200W and a collector current of 30A, this transistor offers unmatched performance and durability. Experience the seamless integration and exceptional value that only Onsemi can provide with the MJ11015G.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides good heat dissipation, making this transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor add convenience in certain circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable performance in amplification circuits.

Package Shape: ROUND

The round package shape helps in easy mounting and installation in various electronic devices.

Maximum Power Dissipation (Abs): 200 W

With a high power dissipation capability, this transistor can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and ease of installation in various systems.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor offers high amplification capabilities in circuit designs.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can operate reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 120 V

The high maximum collector-emitter voltage rating makes this transistor suitable for circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability, making this transistor a durable choice for electronic applications.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can operate in a wide range of temperature conditions.

Maximum Collector Current (IC): 30 A

The high maximum collector current rating allows this transistor to handle high current loads in various electronic circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and ensures reliable electrical connections in circuit applications.

Terminal Position: BOTTOM

The bottom terminal position offers ease of mounting and connection in circuit designs.

Case Connection: COLLECTOR

The case connection at the collector terminal provides efficient heat dissipation and electrical connection in circuit layouts.

Nominal Transition Frequency (fT): 4 MHz

With a nominal transition frequency of 4 MHz, this transistor offers high frequency performance in amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11015G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11015G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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