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MJ11021

Onsemi

MJ11021 by Onsemi

MJ11021 by Onsemi is a PNP BJT with 175W power dissipation, 250V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a min hFE of 100 and operates up to 175 °C.

Median Price

$10.950

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 736 parts In-Stock

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$10.950

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$6.570

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$6.296

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Digiode

USA . 1,152 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

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Electronic Expediters

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Electronics Depot

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Sunrise Surplus Inc.

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LittleDiode

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Tech-Mark Corp

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DF Sales Co.

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DF Sales Co.

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Distributors (Availability)

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A-Z Elektronik GmbH

Germany . 4,964 parts In-Stock

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TANS Electronics

Latvia . 3,232 parts In-Stock

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SupplyDigital Components

Austria . 2,140 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 660 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Corohmni

South Africa . 147 parts In-Stock

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Overview

Unlock the power of reliable performance with the MJ11021 by Onsemi. As a top-tier manufacturer in the industry, Onsemi delivers high-quality Power Bipolar Junction Transistors like the MJ11021 that are ideal for switching applications. With a maximum power dissipation of 175 W and a minimum DC current gain of 100, this PNP Darlington transistor offers exceptional value and reliability. Whether you're looking to optimize your electronic systems or enhance your project efficiency, the MJ11021 provides the perfect solution for your needs. Trust Onsemi for superior quality and performance.

Feature Benefit Bullets

Package Body Material: METAL

The metal body material provides good heat dissipation, allowing the transistor to operate at high power levels without overheating.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with existing PNP transistor circuits, making it a versatile choice for various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor offer protection and convenience in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast response times and efficient performance in switching circuits.

Maximum Power Dissipation (Abs): 175 W

With a high power dissipation capability of 175 W, this transistor can handle heavy loads and high power levels.

Maximum Collector-Emitter Voltage: 250 V

The high collector-emitter voltage rating of 250 V allows for operation in high voltage circuits, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 15 A

Capable of handling a high collector current of 15 A, making it suitable for applications requiring high current switching.

Nominal Transition Frequency (fT): 6 MHz

With a high transition frequency of 6 MHz, this transistor ensures fast switching speeds and efficient performance in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11021 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11021 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-315-3264, 5961013153264

NIIN

013153264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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