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MJ11012G

Onsemi

MJ11012G by Onsemi

MJ11012G by Onsemi is a NPN BJT with 200W power dissipation, 60V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and matte tin terminal finish.

Median Price

$5.513

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 125 parts In-Stock

1+ parts

$8.740

100+ parts

$4.390

1k+ parts

-

10k+ parts

-

125

$8.740

$4.390

-

-

DigiKey

USA . 136 parts In-Stock

1+ parts

$9.660

100+ parts

$4.924

1k+ parts

$4.394

10k+ parts

-

136

$9.660

$4.924

$4.394

-

Rochester

USA . 1,267 parts In-Stock

1+ parts

-

100+ parts

$4.410

1k+ parts

$3.940

10k+ parts

$3.710

1,267

-

$4.410

$3.940

$3.710

Verical

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$5.513

1k+ parts

-

10k+ parts

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300

-

$5.513

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Flip Electronics (Authorized)

USA . 200 parts In-Stock

1+ parts

-

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-

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200

-

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Master Electronics

USA . 170 parts In-Stock

1+ parts

-

100+ parts

$4.330

1k+ parts

$4.260

10k+ parts

-

170

-

$4.330

$4.260

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 13 parts In-Stock

1+ parts

$3.950

100+ parts

-

1k+ parts

-

10k+ parts

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13

$3.950

-

-

-

DF Sales Co.

USA . 13 parts In-Stock

1+ parts

$3.950

100+ parts

-

1k+ parts

-

10k+ parts

-

13

$3.950

-

-

-

Digiode

USA . 1,267 parts In-Stock

1+ parts

$4.636

100+ parts

-

1k+ parts

-

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-

1,267

$4.636

-

-

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Vyrian

USA . 8,917 parts In-Stock

1+ parts

-

100+ parts

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8,917

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Flip Electronics

USA . 1,100 parts In-Stock

1+ parts

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1,100

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-

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IBS Electronics

USA . 170 parts In-Stock

1+ parts

-

100+ parts

$6.844

1k+ parts

$6.578

10k+ parts

-

170

-

$6.844

$6.578

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 344 parts In-Stock

1+ parts

$3.940

100+ parts

-

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344

$3.940

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Corohmni

South Africa . 313 parts In-Stock

1+ parts

$3.950

100+ parts

-

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313

$3.950

-

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Corphita

USA . 570 parts In-Stock

1+ parts

$4.392

100+ parts

-

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570

$4.392

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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QUARKTWIN TECHNOLOGY LTD

USA . 9,202 parts In-Stock

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9,202

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Kulean Microsystems

USA . 7,851 parts In-Stock

1+ parts

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7,851

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Problanco Electronics

Mexico . 5,472 parts In-Stock

1+ parts

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5,472

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TANS Electronics

Latvia . 4,975 parts In-Stock

1+ parts

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4,975

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Lixinc

USA . 4,121 parts In-Stock

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4,121

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SupplyDigital Components

Austria . 1,719 parts In-Stock

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1,719

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Perfect Parts

USA . 426 parts In-Stock

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426

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UHIMA Technologies

Türkiye . 187 parts In-Stock

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187

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Overview

Power up your projects with the MJ11012G by Onsemi! This power bipolar junction transistor is a top-of-the-line product that guarantees high-quality performance. Onsemi, known for its cutting-edge technology and reliable products, has crafted this transistor to be a game-changer in the amplifier industry. With a maximum power dissipation of 200W and a minimum DC current gain of 200, this NPN transistor offers unmatched value and efficiency. Whether you're working on audio amplifiers, industrial controls, or power supplies, the MJ11012G is the perfect choice for all your power needs. Experience the difference with Onsemi's MJ11012G today!

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent heat dissipation, making this product suitable for high-power applications where heat management is critical.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification circuits, ensuring compatibility with a variety of electronic designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain, while the built-in diode and resistor offer convenience and cost savings in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, making it an ideal choice for audio and other signal amplification applications.

Package Shape: ROUND

Round package shape allows for easy and secure mounting in various types of circuit layouts.

Terminal Form: PIN/PEG

Pin/peg terminals provide a reliable connection and ease of installation in electronic circuits.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability ensures the transistor can handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mechanical mounting and easy integration into electronic systems.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures stable and consistent amplification performance in various circuit conditions.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for reliable operation in harsh environments and under heavy load conditions.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating provides flexibility in circuit design and ensures reliable operation in various voltage conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 30 A

High maximum collector current rating allows the transistor to handle large currents, making it suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and corrosion resistance, ensuring long-term reliability in circuit connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure mounting on circuit boards and other electronic assemblies.

Case Connection: COLLECTOR

Collector case connection provides a convenient electrical connection for the transistor, allowing for easy integration into circuit designs.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency indicates fast response and switching times, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11012G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11012G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-303-4841, 5961013034841

NIIN

013034841

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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