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MJE15035G

Onsemi

MJE15035G by Onsemi

MJE15035G by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 150°C with a min DC current gain of 10 (hFE).

Median Price

$1.814

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 284 parts In-Stock

1+ parts

$1.036

100+ parts

$0.893

1k+ parts

$0.862

10k+ parts

$0.789

284

$1.036

$0.893

$0.862

$0.789

Chip1Stop

Japan . 662 parts In-Stock

1+ parts

$1.729

100+ parts

$0.903

1k+ parts

$0.736

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662

$1.729

$0.903

$0.736

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Farnell

UK . 1,267 parts In-Stock

1+ parts

$1.900

100+ parts

$0.796

1k+ parts

$0.565

10k+ parts

$0.554

1,267

$1.900

$0.796

$0.565

$0.554

Newark

USA . 270 parts In-Stock

1+ parts

$2.350

100+ parts

$1.140

1k+ parts

$0.895

10k+ parts

$0.793

270

$2.350

$1.140

$0.895

$0.793

Mouser Electronics

USA . 6,618 parts In-Stock

1+ parts

$2.370

100+ parts

$0.955

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6,618

$2.370

$0.955

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Distrelec

Netherlands . 30 parts In-Stock

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$2.616

100+ parts

$2.316

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$1.726

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$1.436

30

$2.616

$2.316

$1.726

$1.436

DigiKey

USA . 1,940 parts In-Stock

1+ parts

$2.730

100+ parts

$1.212

1k+ parts

$0.900

10k+ parts

$0.805

1,940

$2.730

$1.212

$0.900

$0.805

Element14

Singapore . 1,034 parts In-Stock

1+ parts

$3.030

100+ parts

$1.280

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$1.230

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$1.210

1,034

$3.030

$1.280

$1.230

$1.210

Verical

USA . 1,450 parts In-Stock

1+ parts

-

100+ parts

$0.876

1k+ parts

$0.800

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1,450

-

$0.876

$0.800

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Master Electronics

USA . 1,450 parts In-Stock

1+ parts

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100+ parts

$0.684

1k+ parts

$0.620

10k+ parts

$0.565

1,450

-

$0.684

$0.620

$0.565

RS (Exports)

UK . 294 parts In-Stock

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-

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$0.974

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$0.681

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294

-

$0.974

$0.681

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Rochester

USA . 34 parts In-Stock

1+ parts

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100+ parts

$0.778

1k+ parts

$0.646

10k+ parts

$0.576

34

-

$0.778

$0.646

$0.576

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,703 parts In-Stock

1+ parts

$0.636

100+ parts

-

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1,703

$0.636

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Nova Conductors

Japan . 1,000 parts In-Stock

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$1.011

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1,000

$1.011

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Bristol Electronics

USA . 150 parts In-Stock

1+ parts

$1.662

100+ parts

$0.615

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-

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150

$1.662

$0.615

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TME

Poland . 36 parts In-Stock

1+ parts

$1.970

100+ parts

$0.850

1k+ parts

$0.790

10k+ parts

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36

$1.970

$0.850

$0.790

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Chip Stock

USA . 14,600 parts In-Stock

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14,600

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NAC Semi

USA . 2,500 parts In-Stock

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$0.924

10k+ parts

$0.853

2,500

-

-

$0.924

$0.853

Flip Electronics

USA . 1,850 parts In-Stock

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1,850

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Vyrian

USA . 840 parts In-Stock

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840

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IBS Electronics

USA . 425 parts In-Stock

1+ parts

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$0.933

1k+ parts

$0.856

10k+ parts

$0.842

425

-

$0.933

$0.856

$0.842

ACDS - Activité Composants Distribution Service

France . 150 parts In-Stock

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150

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Dan-Mar Components

USA . 150 parts In-Stock

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150

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LittleDiode

UK . 13 parts In-Stock

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13

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,181 parts In-Stock

1+ parts

$0.570

100+ parts

$0.556

1k+ parts

$0.553

10k+ parts

-

1,181

$0.570

$0.556

$0.553

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Ampacity Inc.

Singapore . 856 parts In-Stock

1+ parts

$0.570

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856

$0.570

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Corphita

USA . 684 parts In-Stock

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$0.602

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684

$0.602

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Component Stockers USA

USA . 8,749 parts In-Stock

1+ parts

$0.630

100+ parts

$0.950

1k+ parts

$0.610

10k+ parts

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8,749

$0.630

$0.950

$0.610

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Corohmni

South Africa . 99 parts In-Stock

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$0.669

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99

$0.669

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Aztec Data Supply Inc.

USA . 882 parts In-Stock

1+ parts

$0.740

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882

$0.740

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.969

100+ parts

$0.969

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$0.969

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40

$0.969

$0.969

$0.969

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Argo Parts USA

USA . 216 parts In-Stock

1+ parts

$1.011

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216

$1.011

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Bastille Electronics

Australia . 200 parts In-Stock

1+ parts

$1.011

100+ parts

$0.960

1k+ parts

$0.912

10k+ parts

$0.900

200

$1.011

$0.960

$0.912

$0.900

Continental Prestige Electronics

USA . 700 parts In-Stock

1+ parts

$1.350

100+ parts

$1.120

1k+ parts

$0.762

10k+ parts

-

700

$1.350

$1.120

$0.762

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Microchip USA

USA . 3,625 parts In-Stock

1+ parts

$12.030

100+ parts

$11.950

1k+ parts

$11.910

10k+ parts

$11.880

3,625

$12.030

$11.950

$11.910

$11.880

Perfect Parts

USA . 114,024 parts In-Stock

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114,024

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Lixinc

USA . 9,095 parts In-Stock

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9,095

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S.R.D Solutions

India . 8,000 parts In-Stock

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Problanco Electronics

Mexico . 7,745 parts In-Stock

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TANS Electronics

Latvia . 7,666 parts In-Stock

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7,666

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GreenTree Electronics

Israel . 6,033 parts In-Stock

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Kulean Microsystems

USA . 3,178 parts In-Stock

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Eastek

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 1,344 parts In-Stock

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1,344

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UHIMA Technologies

Türkiye . 861 parts In-Stock

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861

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Kepictronics

USA . 225 parts In-Stock

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Resion (Excess)

USA . 100 parts In-Stock

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100

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Allen Electronics Distributors

USA . 18 parts In-Stock

1+ parts

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$1.192

1k+ parts

$0.839

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18

-

$1.192

$0.839

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Assy Fe

Spain . 11 parts In-Stock

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11

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Overview

Unleash the power of innovation with the MJE15035G by Onsemi, a top-quality Power Bipolar Junction Transistor designed for unparalleled performance in amplifier applications. Manufactured by Onsemi, known for their cutting-edge technology and reliability, this PNP transistor offers a maximum collector-emitter voltage of 350V and a maximum operating temperature of 150°C, ensuring durability and efficiency. With a maximum power dissipation of 50W and a minimum DC current gain of 10, the MJE15035G delivers exceptional value and benefits to customers seeking high-performance components for their projects. Experience the difference with Onsemi's MJE15035G and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs that require this type of transistor.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to use in various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in audio and signal processing systems.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting on a circuit board, saving space and facilitating assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide a secure and reliable connection, ideal for applications where stability is crucial.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and increased functionality for different applications.

Maximum Power Dissipation (Abs): 50 W

The high power dissipation capability of 50W ensures the transistor can handle heavy loads without overheating, improving overall performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy and secure mounting, making it suitable for applications where stability is essential.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures consistent amplification in various circuits, providing reliable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage of 350V allows the transistor to handle high voltage applications with ease.

Transistor Element Material: SILICON

The silicon material used in the transistor element ensures high performance, reliability, and longevity.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4A, this transistor can handle high current loads with ease.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures a reliable connection for improved performance.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, making it easier to integrate into existing circuits.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and enhances thermal management for improved reliability.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency of 30MHz ensures fast response times and high-frequency performance, making it ideal for amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE15035G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE15035G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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