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MJE15034G

Onsemi

MJE15034G by Onsemi

MJE15034G by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.

Median Price

$1.721

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,094 parts In-Stock

1+ parts

$0.577

100+ parts

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1,094

$0.577

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Rochester

USA . 84 parts In-Stock

1+ parts

$0.830

100+ parts

$0.810

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$0.800

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84

$0.830

$0.810

$0.800

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Farnell

UK . 1,050 parts In-Stock

1+ parts

$1.540

100+ parts

$0.676

1k+ parts

$0.551

10k+ parts

$0.540

1,050

$1.540

$0.676

$0.551

$0.540

Distrelec

Netherlands . 50 parts In-Stock

1+ parts

$1.902

100+ parts

$0.891

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-

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50

$1.902

$0.891

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Chip1Stop

Japan . 553 parts In-Stock

1+ parts

$1.910

100+ parts

$0.833

1k+ parts

$0.620

10k+ parts

$0.504

553

$1.910

$0.833

$0.620

$0.504

Newark

USA . 366 parts In-Stock

1+ parts

$2.220

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366

$2.220

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Mouser Electronics

USA . 5,689 parts In-Stock

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$2.350

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$1.000

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5,689

$2.350

$1.000

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Element14

Singapore . 1,496 parts In-Stock

1+ parts

$2.490

100+ parts

$1.110

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$0.873

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$0.855

1,496

$2.490

$1.110

$0.873

$0.855

DigiKey

USA . 3,811 parts In-Stock

1+ parts

$2.680

100+ parts

$1.188

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$0.881

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$0.785

3,811

$2.680

$1.188

$0.881

$0.785

Master Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.993

1k+ parts

$0.611

10k+ parts

$0.533

9,000

-

$0.993

$0.611

$0.533

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$1.168

1k+ parts

$0.719

10k+ parts

$0.691

9,000

-

$1.168

$0.719

$0.691

Avnet

USA . 350 parts In-Stock

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350

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RS (Exports)

UK . 10 parts In-Stock

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100+ parts

$0.945

1k+ parts

$0.653

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10

-

$0.945

$0.653

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 759 parts In-Stock

1+ parts

$0.758

100+ parts

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759

$0.758

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Nova Conductors

Japan . 1,000 parts In-Stock

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$1.000

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1,000

$1.000

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Component Electronics Inc.

Canada . 3 parts In-Stock

1+ parts

$1.150

100+ parts

$0.870

1k+ parts

$0.750

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3

$1.150

$0.870

$0.750

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Maritex

Poland . 300 parts In-Stock

1+ parts

$1.375

100+ parts

$0.788

1k+ parts

$0.667

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300

$1.375

$0.788

$0.667

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TME

Poland . 220 parts In-Stock

1+ parts

$1.930

100+ parts

$0.730

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220

$1.930

$0.730

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Chip Stock

USA . 14,820 parts In-Stock

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14,820

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IBS Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.870

1k+ parts

$0.820

10k+ parts

$0.778

10,000

-

$0.870

$0.820

$0.778

Vyrian

USA . 2,095 parts In-Stock

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2,095

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NAC Semi

USA . 200 parts In-Stock

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$2.800

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$2.590

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200

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$2.800

$2.590

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ComSIT Distribution GmbH

Germany . 175 parts In-Stock

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175

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Flip Electronics

USA . 100 parts In-Stock

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100

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Inventory MP

USA . 26 parts In-Stock

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26

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Bristol Electronics

USA . 26 parts In-Stock

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26

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LittleDiode

UK . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 2,081 parts In-Stock

1+ parts

$0.560

100+ parts

$0.546

1k+ parts

$0.543

10k+ parts

-

2,081

$0.560

$0.546

$0.543

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Ampacity Inc.

Singapore . 1,838 parts In-Stock

1+ parts

$0.560

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1,838

$0.560

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Continental Prestige Electronics

USA . 4,708 parts In-Stock

1+ parts

$0.651

100+ parts

-

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$0.638

4,708

$0.651

-

-

$0.638

Argo Parts USA

USA . 1,970 parts In-Stock

1+ parts

$0.651

100+ parts

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$0.631

1,970

$0.651

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-

$0.631

Corphita

USA . 279 parts In-Stock

1+ parts

$0.718

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279

$0.718

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Modulus Dynamics

Lithuania . 55 parts In-Stock

1+ parts

$0.723

100+ parts

$0.715

1k+ parts

$0.694

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55

$0.723

$0.715

$0.694

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Corohmni

South Africa . 258 parts In-Stock

1+ parts

$0.798

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258

$0.798

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Aztec Data Supply Inc.

USA . 4,695 parts In-Stock

1+ parts

$0.860

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4,695

$0.860

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Netroflash

USA . 1,000 parts In-Stock

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$1.000

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1,000

$1.000

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$1.507

100+ parts

$1.432

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$1.432

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270

$1.507

$1.432

$1.432

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Microchip USA

USA . 8,079 parts In-Stock

1+ parts

$10.010

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8,079

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Perfect Parts

USA . 196,872 parts In-Stock

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Authorized Procurement Solutions

USA . 18,549 parts In-Stock

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S.R.D Solutions

India . 8,000 parts In-Stock

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TANS Electronics

Latvia . 6,513 parts In-Stock

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6,513

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SupplyDigital Components

Austria . 6,435 parts In-Stock

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6,435

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Problanco Electronics

Mexico . 5,649 parts In-Stock

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5,649

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Lixinc

USA . 2,083 parts In-Stock

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2,083

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Kulean Microsystems

USA . 597 parts In-Stock

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597

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UHIMA Technologies

Türkiye . 385 parts In-Stock

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385

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GreenTree Electronics

Israel . 350 parts In-Stock

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350

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Robosynatics

Brazil . 263 parts In-Stock

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263

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Lucentia Tech

USA . 263 parts In-Stock

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263

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Kepictronics

USA . 250 parts In-Stock

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Overview

Looking to amplify your projects with top-notch quality components? Look no further than the MJE15034G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Power Bipolar Junction Transistors (BJTs) like this NPN transistor designed for amplifier applications. With a maximum power dissipation of 50W and a maximum collector-emitter voltage of 350V, this transistor offers unmatched value and performance. Upgrade your designs with the MJE15034G and experience the benefits of superior quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with only one transistor, making it easy to implement in circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering onto circuit boards.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability allows for handling of larger loads and ensures reliability under heavy usage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides stability and ease of mounting in various applications.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain ensures consistent performance in amplification tasks.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, making it suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 350 V

High collector-emitter voltage rating allows for handling of higher voltage circuits.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in transistor operation.

Maximum Collector Current (IC): 4 A

High collector current rating allows for handling of larger current loads.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance.

Terminal Position: SINGLE

Single terminal position simplifies circuit connection and integration.

Case Connection: COLLECTOR

Case connection at collector provides easy access for circuit connections.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for faster switching speeds and improved performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE15034G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE15034G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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