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MJE182G

Onsemi

MJE182G by Onsemi

The Onsemi MJE182G is a NPN BJT transistor with 80V VCE, 3A IC, and 1.5W Pd. Ideal for switching applications, it has hFE of 12, fT of 50MHz, and can operate up to 150°C. The package style is flange mount with matte tin finish suitable for through-hole mounting.

Median Price

$1.120

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 8 parts In-Stock

1+ parts

$1.030

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8

$1.030

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Farnell

UK . 11,968 parts In-Stock

1+ parts

$1.050

100+ parts

$0.436

1k+ parts

$0.272

10k+ parts

$0.263

11,968

$1.050

$0.436

$0.272

$0.263

Arrow

USA . 4,493 parts In-Stock

1+ parts

$1.189

100+ parts

$0.487

1k+ parts

$0.320

10k+ parts

$0.277

4,493

$1.189

$0.487

$0.320

$0.277

Mouser Electronics

USA . 7,259 parts In-Stock

1+ parts

$1.240

100+ parts

$0.514

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$0.368

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7,259

$1.240

$0.514

$0.368

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DigiKey

USA . 4,583 parts In-Stock

1+ parts

$1.240

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$0.514

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$0.363

10k+ parts

$0.278

4,583

$1.240

$0.514

$0.363

$0.278

Newark

USA . 2,174 parts In-Stock

1+ parts

$1.360

100+ parts

$0.629

1k+ parts

$0.477

10k+ parts

$0.392

2,174

$1.360

$0.629

$0.477

$0.392

Adafruit Industries

USA . 600 parts In-Stock

1+ parts

$1.787

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$1.698

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$1.698

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600

$1.787

$1.698

$1.698

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Element14

Singapore . 11,968 parts In-Stock

1+ parts

$1.800

100+ parts

$0.744

1k+ parts

$0.449

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$0.441

11,968

$1.800

$0.744

$0.449

$0.441

Rochester

USA . 238,036 parts In-Stock

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$0.368

1k+ parts

$0.306

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$0.273

238,036

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$0.368

$0.306

$0.273

Verical

USA . 10,000 parts In-Stock

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$0.315

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$0.292

10,000

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$0.292

Master Electronics

USA . 10,000 parts In-Stock

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$0.245

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$0.234

Future Electronics

Canada . 6,500 parts In-Stock

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$0.375

10k+ parts

$0.360

6,500

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$0.360

Avnet

USA . 2,500 parts In-Stock

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Flip Electronics (Authorized)

USA . 460 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 92 parts In-Stock

1+ parts

$0.220

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$0.220

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Digiode

USA . 2,332 parts In-Stock

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$0.286

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2,332

$0.286

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Maritex

Poland . 3,004 parts In-Stock

1+ parts

$0.465

100+ parts

$0.249

1k+ parts

$0.235

10k+ parts

$0.212

3,004

$0.465

$0.249

$0.235

$0.212

TME

Poland . 429 parts In-Stock

1+ parts

$1.220

100+ parts

$0.543

1k+ parts

$0.355

10k+ parts

$0.343

429

$1.220

$0.543

$0.355

$0.343

IBS Electronics

USA . 123,742 parts In-Stock

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$0.561

1k+ parts

$0.379

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$0.400

123,742

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$0.561

$0.379

$0.400

Chip Stock

USA . 28,779 parts In-Stock

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Vyrian

USA . 25,306 parts In-Stock

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NAC Semi

USA . 11,500 parts In-Stock

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$0.800

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Diverse Electronics

Canada . 5,445 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,302 parts In-Stock

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Flip Electronics

USA . 460 parts In-Stock

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460

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Cyclops Electronics Ltd

UK . 320 parts In-Stock

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320

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Lakeview Electronics

USA . 160 parts In-Stock

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160

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PC Components Company LLC

USA . 80 parts In-Stock

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80

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Bristol Electronics

USA . 80 parts In-Stock

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80

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Prism Electronics

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Ampacity Inc.

Singapore . 24,967 parts In-Stock

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$0.142

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24,967

$0.142

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Semicontronic

India . 24,776 parts In-Stock

1+ parts

$0.142

100+ parts

$0.138

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$0.138

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24,776

$0.142

$0.138

$0.138

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Argo Parts USA

USA . 3,538 parts In-Stock

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$0.213

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$0.207

3,538

$0.213

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$0.207

Corohmni

South Africa . 167 parts In-Stock

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$0.216

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167

$0.216

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Netroflash

USA . 50 parts In-Stock

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$0.220

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50

$0.220

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Corphita

USA . 1,918 parts In-Stock

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$0.271

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$0.271

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Continental Prestige Electronics

USA . 15,374 parts In-Stock

1+ parts

$0.634

100+ parts

$0.353

1k+ parts

$0.195

10k+ parts

$0.176

15,374

$0.634

$0.353

$0.195

$0.176

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.787

100+ parts

$1.698

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$1.698

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600

$1.787

$1.698

$1.698

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Aztec Data Supply Inc.

USA . 3,128 parts In-Stock

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$1.914

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3,128

$1.914

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Perfect Parts

USA . 1,513,754 parts In-Stock

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Infinite Electronics LLP (Excess)

. 164,006 parts In-Stock

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Metaverse IC Inc.

Canada . 86,168 parts In-Stock

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RC Electronics

USA . 78,112 parts In-Stock

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$0.240

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$0.210

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$0.210

78,112

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$0.210

$0.210

GreenTree Electronics

Israel . 42,500 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,957 parts In-Stock

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A-Z Elektronik GmbH

Germany . 15,000 parts In-Stock

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Microchip USA

USA . 11,485 parts In-Stock

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TANS Electronics

Latvia . 5,866 parts In-Stock

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Kulean Microsystems

USA . 4,966 parts In-Stock

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Authorized Procurement Solutions

USA . 3,624 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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S.R.D Solutions

India . 2,980 parts In-Stock

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SupplyDigital Components

Austria . 2,027 parts In-Stock

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Lixinc

USA . 1,908 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,302 parts In-Stock

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Glotronic Ltd.

UK . 1,042 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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ChipstoGo Electronic ltd

UK . 900 parts In-Stock

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900

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Problanco Electronics

Mexico . 750 parts In-Stock

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750

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UHIMA Technologies

Türkiye . 713 parts In-Stock

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713

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Overview

Discover the power of the MJE182G by Onsemi, a high-quality Power BJT transistor designed for switching applications. With a maximum collector-emitter voltage of 80V and a maximum operating temperature of 150°C, this NPN transistor offers reliable performance in a variety of scenarios. Its single configuration and flange mount package make it easy to integrate into your projects, while its 1.5W power dissipation ensures efficiency. Trust in Onsemi's reputation for excellence and unlock the potential of the MJE182G for your next innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast response times.

Configuration: SINGLE

The single configuration simplifies the design process and reduces chances of error in circuitry.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and efficient use of space on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and configuration.

Maximum Power Dissipation (Abs): 1.5 W

The high power dissipation capability of 1.5W ensures reliable operation even under heavy loads.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and durability in various mounting applications.

Minimum DC Current Gain (hFE): 12

The high minimum DC current gain of 12 ensures consistent and stable amplification in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low noise, and improved efficiency in electronic circuits.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle high current loads without damage.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures a reliable electrical connection.

Terminal Position: SINGLE

The single terminal position simplifies the installation process and reduces wiring complexity.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50MHz ensures fast switching speeds for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE182G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

12

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE182G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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