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MJ11014

Onsemi

MJ11014 by Onsemi

MJ11014 by Onsemi is a NPN power BJT with 200W max power dissipation, 30A max collector current, and 90V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a round package with flange mount style.

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Vyrian

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Digiode

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Anansix

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Corel Iberica Componentes, S.L.

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Bristol Electronics

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R&J Components

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MISTER SPROCKETS

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ComSIT Distribution GmbH

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 9 parts In-Stock

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Electronic Expediters

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LittleDiode

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Tech-Mark Corp

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Electronics Depot

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IDEA Electronic Components Group

UK . 1,918 parts In-Stock

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MKK Technologies

India . 762 parts In-Stock

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DigiPath Technology Company

USA . 762 parts In-Stock

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Microchip USA

USA . 9,457 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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Parana Technologies

USA . 1,585 parts In-Stock

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Corphita

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UHIMA Technologies

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Corohmni

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Metaverse IC Inc.

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Kepictronics

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Cyclops Electronics Ltd (Excess)

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A-Plus Industry Inc.

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Overview

Elevate your amplifier designs with the Onsemi MJ11014 Power BJT. Crafted with precision and expertise by Onsemi, this NPN transistor boasts a Darlington configuration with a built-in diode and resistor for seamless integration. Perfect for amplifier applications, this high-quality transistor offers a maximum power dissipation of 200 W and a maximum collector-emitter voltage of 90 V, ensuring reliable performance. Upgrade your projects with the MJ11014 and experience unparalleled value, efficiency, and innovation.

Feature Benefit Bullets

Package Body Material: METAL

Provides good heat dissipation, ensuring the transistor stays cool during operation and prolonging its lifespan.

Polarity or Channel Type: NPN

Commonly used for amplification as NPN transistors are easy to work with and have high current gain.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Saves space on the PCB and simplifies circuit design by combining multiple components into one package.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring excellent performance in audio and signal processing applications.

Maximum Power Dissipation (Abs): 200 W

Capable of handling high power levels, making it suitable for demanding applications where power dissipation is a concern.

Maximum Collector-Emitter Voltage: 90 V

Allows for operation in circuits with higher voltage levels, ensuring the transistor can handle a wide range of applications.

Nominal Transition Frequency (fT): 4 MHz

Provides high frequency response, making it ideal for applications where fast switching speeds are required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11014 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11014 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-304-8915, 5961013048915, 5961-01-331-2898, 5961013312898

NIIN

013048915, 013312898

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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