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BD140G

Onsemi

BD140G by Onsemi

The Onsemi BD140G is a PNP BJT transistor with 80V VCE, 1.5A IC, and 12.5W power dissipation. Ideal for amplifier applications, it has a min hFE of 25 and operates up to 150°C. The package is through-hole with matte tin finish in a rectangular shape.

Median Price

$0.870

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 825 parts In-Stock

1+ parts

$0.253

100+ parts

$0.253

1k+ parts

$0.253

10k+ parts

$0.253

825

$0.253

$0.253

$0.253

$0.253

Distrelec

Netherlands . 128 parts In-Stock

1+ parts

$0.761

100+ parts

$0.474

1k+ parts

$0.386

10k+ parts

-

128

$0.761

$0.474

$0.386

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Element14

Singapore . 810 parts In-Stock

1+ parts

$0.979

100+ parts

$0.584

1k+ parts

$0.369

10k+ parts

$0.360

810

$0.979

$0.584

$0.369

$0.360

Farnell

UK . 1,149 parts In-Stock

1+ parts

$1.250

100+ parts

$0.467

1k+ parts

$0.324

10k+ parts

$0.318

1,149

$1.250

$0.467

$0.324

$0.318

Arrow

USA . 1,081 parts In-Stock

1+ parts

$1.557

100+ parts

$0.658

1k+ parts

$0.472

10k+ parts

$0.373

1,081

$1.557

$0.658

$0.472

$0.373

Mouser Electronics

USA . 5,741 parts In-Stock

1+ parts

$1.560

100+ parts

$0.660

1k+ parts

-

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-

5,741

$1.560

$0.660

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DigiKey

USA . 5,731 parts In-Stock

1+ parts

$1.560

100+ parts

$0.660

1k+ parts

$0.473

10k+ parts

$0.374

5,731

$1.560

$0.660

$0.473

$0.374

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$1.819

100+ parts

$1.728

1k+ parts

$1.728

10k+ parts

-

50

$1.819

$1.728

$1.728

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Verical

USA . 1,081 parts In-Stock

1+ parts

-

100+ parts

$0.658

1k+ parts

$0.472

10k+ parts

$0.373

1,081

-

$0.658

$0.472

$0.373

Rochester

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.508

1k+ parts

$0.421

10k+ parts

$0.376

1,000

-

$0.508

$0.421

$0.376

Master Electronics

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.341

10k+ parts

$0.327

500

-

-

$0.341

$0.327

Flip Electronics (Authorized)

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

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200

-

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Chip1Stop

Japan . 73 parts In-Stock

1+ parts

-

100+ parts

$0.163

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-

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73

-

$0.163

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 245 parts In-Stock

1+ parts

$0.261

100+ parts

-

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-

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245

$0.261

-

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Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.373

100+ parts

-

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-

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15

$0.373

-

-

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TME

Poland . 451 parts In-Stock

1+ parts

$1.460

100+ parts

$0.652

1k+ parts

$0.481

10k+ parts

$0.465

451

$1.460

$0.652

$0.481

$0.465

Chip Stock

USA . 29,651 parts In-Stock

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-

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29,651

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VNN

France . 2,607 parts In-Stock

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2,607

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ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

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2,500

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ComSIT USA

USA . 2,500 parts In-Stock

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2,500

-

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.100

10k+ parts

$1.910

2,000

-

-

$2.100

$1.910

Vyrian

USA . 1,473 parts In-Stock

1+ parts

-

100+ parts

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-

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1,473

-

-

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IBS Electronics

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.474

10k+ parts

$0.453

500

-

-

$0.474

$0.453

Flip Electronics

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

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200

-

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Prism Electronics

USA . 60 parts In-Stock

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60

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Holdelec - ElecDif-Pro

France . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,462 parts In-Stock

1+ parts

$0.139

100+ parts

$0.136

1k+ parts

$0.135

10k+ parts

-

1,462

$0.139

$0.136

$0.135

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Corohmni

South Africa . 440 parts In-Stock

1+ parts

$0.222

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440

$0.222

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Corphita

USA . 1,620 parts In-Stock

1+ parts

$0.248

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1,620

$0.248

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Ampacity Inc.

Singapore . 1,183 parts In-Stock

1+ parts

$0.302

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-

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1,183

$0.302

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Argo Parts USA

USA . 2,693 parts In-Stock

1+ parts

$0.339

100+ parts

-

1k+ parts

-

10k+ parts

$0.329

2,693

$0.339

-

-

$0.329

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.373

100+ parts

-

1k+ parts

$0.354

10k+ parts

$0.347

2,000

$0.373

-

$0.354

$0.347

Modulus Dynamics

Lithuania . 45 parts In-Stock

1+ parts

$0.414

100+ parts

$0.410

1k+ parts

$0.397

10k+ parts

-

45

$0.414

$0.410

$0.397

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Aztec Data Supply Inc.

USA . 4,948 parts In-Stock

1+ parts

$0.446

100+ parts

-

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4,948

$0.446

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Continental Prestige Electronics

USA . 3,854 parts In-Stock

1+ parts

$0.812

100+ parts

$0.480

1k+ parts

$0.303

10k+ parts

$0.251

3,854

$0.812

$0.480

$0.303

$0.251

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.819

100+ parts

$1.728

1k+ parts

$1.728

10k+ parts

-

50

$1.819

$1.728

$1.728

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Perfect Parts

USA . 157,408 parts In-Stock

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157,408

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Robosynatics

Brazil . 14,759 parts In-Stock

1+ parts

-

100+ parts

$1.007

1k+ parts

$0.987

10k+ parts

$0.987

14,759

-

$1.007

$0.987

$0.987

Lucentia Tech

USA . 14,759 parts In-Stock

1+ parts

-

100+ parts

$1.007

1k+ parts

$0.987

10k+ parts

$0.987

14,759

-

$1.007

$0.987

$0.987

Lixinc

USA . 7,061 parts In-Stock

1+ parts

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7,061

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SupplyDigital Components

Austria . 6,144 parts In-Stock

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6,144

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A-Z Elektronik GmbH

Germany . 5,736 parts In-Stock

1+ parts

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5,736

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TANS Electronics

Latvia . 4,895 parts In-Stock

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4,895

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Kulean Microsystems

USA . 4,711 parts In-Stock

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4,711

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Alle Elektronik GmbH

Germany . 3,824 parts In-Stock

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3,824

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Problanco Electronics

Mexico . 1,413 parts In-Stock

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1,413

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GreenTree Electronics

Israel . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 110 parts In-Stock

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110

-

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Overview

Unleash the power of innovation with the BD140G by Onsemi, a premium Power Bipolar Junction Transistor that sets the standard for excellence in the field. Manufactured by industry leaders, this PNP transistor is designed for high-performance amplification applications. With its superior quality and reliability, the BD140G offers customers unmatched value and benefits. Experience increased efficiency and optimal functionality with this top-of-the-line product, bringing your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection in circuit boards.

No. of Terminals: 3

Three terminals offer versatility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 12.5 W

High power dissipation capacity allows for the handling of larger power levels without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style enables easy and secure mounting on surfaces or heat sinks.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain ensures consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in elevated temperature conditions.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides flexibility and reliability in voltage handling.

Transistor Element Material: SILICON

Silicon material offers high efficiency and performance in transistor operations.

Maximum Collector Current (IC): 1.5 A

High collector current rating allows for handling of larger current loads with ease.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and reliable contact for terminal connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD140G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD140G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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