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BD14010STU

Onsemi

BD14010STU by Onsemi

BD14010STU by Onsemi is a PNP BJT transistor with 80V VCEO, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications, it has a hFE of 63 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.585

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 6 parts In-Stock

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$0.162

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6

$0.162

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Adafruit Industries

USA . 150 parts In-Stock

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$0.330

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$0.313

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$0.313

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150

$0.330

$0.313

$0.313

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Mouser Electronics

USA . 3,356 parts In-Stock

1+ parts

$1.100

100+ parts

$0.560

1k+ parts

$0.400

10k+ parts

$0.369

3,356

$1.100

$0.560

$0.400

$0.369

Chip1Stop

Japan . 3,972 parts In-Stock

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-

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$0.585

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$0.412

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$0.370

3,972

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$0.585

$0.412

$0.370

Verical

USA . 1,920 parts In-Stock

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$0.652

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$0.558

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1,920

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$0.652

$0.558

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Master Electronics

USA . 1,920 parts In-Stock

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$0.520

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$0.390

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1,920

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$0.520

$0.390

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RS (Exports)

UK . 40 parts In-Stock

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$0.722

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$0.650

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40

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$0.722

$0.650

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,042 parts In-Stock

1+ parts

$0.244

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1,042

$0.244

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Nova Conductors

Japan . 100 parts In-Stock

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$0.310

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100

$0.310

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TME

Poland . 1,854 parts In-Stock

1+ parts

$1.171

100+ parts

$0.678

1k+ parts

$0.550

10k+ parts

$0.496

1,854

$1.171

$0.678

$0.550

$0.496

Flip Electronics

USA . 8,400 parts In-Stock

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Chip Stock

USA . 4,155 parts In-Stock

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VNN

France . 3,247 parts In-Stock

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IBS Electronics

USA . 1,920 parts In-Stock

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100+ parts

$0.676

1k+ parts

$0.507

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1,920

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$0.676

$0.507

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NAC Semi

USA . 1,520 parts In-Stock

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$0.555

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1,520

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$0.555

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Vyrian

USA . 1,427 parts In-Stock

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R&J Components

USA . 388 parts In-Stock

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388

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Zilex Electronics Inc.

Canada . 21 parts In-Stock

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ABC Electronics Ltd.

UK . 2 parts In-Stock

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2

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Distributors (Availability)

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Semicontronic

India . 1,676 parts In-Stock

1+ parts

$0.138

100+ parts

$0.135

1k+ parts

$0.134

10k+ parts

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1,676

$0.138

$0.135

$0.134

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Ampacity Inc.

Singapore . 1,336 parts In-Stock

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$0.138

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1,336

$0.138

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Corphita

USA . 2,300 parts In-Stock

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$0.231

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2,300

$0.231

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Corohmni

South Africa . 363 parts In-Stock

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$0.257

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363

$0.257

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Argo Parts USA

USA . 3,067 parts In-Stock

1+ parts

$0.300

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$0.291

3,067

$0.300

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$0.291

Netroflash

USA . 1,000 parts In-Stock

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$0.310

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1,000

$0.310

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Aztec Data Supply Inc.

USA . 50 parts In-Stock

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$0.314

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50

$0.314

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$0.330

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$0.313

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$0.313

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150

$0.330

$0.313

$0.313

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Modulus Dynamics

Lithuania . 21 parts In-Stock

1+ parts

$0.333

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$0.330

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$0.320

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21

$0.333

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$0.320

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Continental Prestige Electronics

USA . 823 parts In-Stock

1+ parts

$0.458

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$0.303

1k+ parts

$0.291

10k+ parts

$0.274

823

$0.458

$0.303

$0.291

$0.274

Perfect Parts

USA . 19,354 parts In-Stock

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Lixinc

USA . 13,085 parts In-Stock

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Problanco Electronics

Mexico . 5,602 parts In-Stock

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Kepictronics

USA . 3,840 parts In-Stock

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3,840

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SupplyDigital Components

Austria . 3,634 parts In-Stock

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Kulean Microsystems

USA . 3,313 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,856 parts In-Stock

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TANS Electronics

Latvia . 2,215 parts In-Stock

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Allen Electronics Distributors

USA . 1,940 parts In-Stock

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GreenTree Electronics

Israel . 1,920 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,904 parts In-Stock

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Eastek

USA . 1,900 parts In-Stock

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Supply Digital

USA . 1,825 parts In-Stock

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Authorized Procurement Solutions

USA . 920 parts In-Stock

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920

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UHIMA Technologies

Türkiye . 775 parts In-Stock

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775

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Overview

Enhance the power efficiency and performance of your electronic devices with the BD14010STU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Power Bipolar Junction Transistors that excel in switching applications. The BD14010STU offers customers exceptional value with its reliable performance, low power dissipation, and high DC current gain. Whether you're looking to improve the efficiency of your circuit designs or enhance the functionality of your electronic devices, the BD14010STU is the perfect solution for all your power transistor needs. Trust Onsemi for top-tier quality and unparalleled performance in every product they offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to handle during installation.

Transistor Application: SWITCHING

Designed for switching applications, making it suitable for controlling currents in electronic devices.

Package Shape: RECTANGULAR

The rectangular shape provides a standard form factor for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

The through-hole terminals allow for easy soldering and secure connections in circuit boards.

No. of Terminals: 3

The 3 terminals provide the necessary connections for proper operation within a circuit.

Maximum Power Dissipation: 12.5 W

With a high power dissipation capability, this transistor can handle higher power loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and easy mounting options in various devices.

Minimum DC Current Gain (hFE): 63

The minimum DC current gain ensures reliable amplification of input signals in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for use in environments with elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for handling higher voltages safely in circuit applications.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, making it a popular choice for transistors.

Maximum Collector Current (IC): 1.5 A

Capable of handling high collector currents, making it suitable for applications that require high current switching.

Terminal Finish: MATTE TIN

The matte tin finish ensures good solderability and long-term reliability of the terminal connections.

Terminal Position: SINGLE

The single terminal position simplifies assembly and installation in circuits, reducing complexity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD14010STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD14010STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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